2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)最新文献_第9页

Trench Gate JAM Dielectric Modulated Nanowire FET (TG-JAM-DM-NWFET) Biosensor 介质调制纳米线场效应管生物传感器

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032912

Shivani Yadav, Sonam Rewari

{"title":"Trench Gate JAM Dielectric Modulated Nanowire FET (TG-JAM-DM-NWFET) Biosensor","authors":"Shivani Yadav, Sonam Rewari","doi":"10.1109/EDKCON56221.2022.10032912","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032912","url":null,"abstract":"In this paper, a novel design for biosensor named as Trench Gate Junction Accumulation Mode Dielectric Modulated Nanowire FET (TG-JAM-DM-NWFET) has been proposed for the identification of biomolecules linked to various diseases without the use of labels. This work is based on silicon nanowire FET operating in the Junction Accumulation Mode (JAM), which has a cylindrical Gate-All-Around topology. To the best of our knowledge, there is no published design for such a nanowire FET biosensor with a Trench Gate configuration. This design will be more suitable for biosensing applications thanks to the benefits of both the Trench Gate and the JAM cylindrical Gate-All-Around. Comparative analysis of TG-JAM-DM-NWFET has been performed with Normal Gate All Around Nanowire FET (NG-GAA-NWFET) based biosensor immobilizing various neutral biomolecules such as streptavidin, biotin, ferro-cytochrome c, keratin, and gelatin. For the case of neutral ferro-cytochrome c biomolecule immobilization in the nanocavity region, it has been shown that the proposed design, when compared to a normal gate all around nanowire FET, has 113.80% higher ION current sensitivity, 3088.91% increase in switching ratio, 5.11% improvement in subthreshold slope, and 1652.63% improvement in leakage current.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123922918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Comparative study of Compound Semiconductors/ Silicon- based Cylindrical Surrounding Dual-Metal Gate Junctionless Accumulation-Mode (CS-DMG-JAM) MOSFET for High Frequency and Switching Applications 化合物半导体/硅基圆柱环绕双金属栅极无结累加模式(CS-DMG-JAM) MOSFET高频与开关应用的比较研究

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032896

Sumedha Gupta, N. Pandey, R. Gupta

引用次数: 0

Design and Optimization of Highly Efficient a-Si:H/µc-Si:H Tandem Solar Cell 高效a-Si:H/µc-Si:H串联太阳能电池的设计与优化

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032890

Savita Kashyap, R. Pandey, Jaya Madan

{"title":"Design and Optimization of Highly Efficient a-Si:H/µc-Si:H Tandem Solar Cell","authors":"Savita Kashyap, R. Pandey, Jaya Madan","doi":"10.1109/EDKCON56221.2022.10032890","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032890","url":null,"abstract":"Silicon material based solar cells are considered as the most rapid developing technology for higher efficiency and cost-effective in the photovoltaic (PV) industry. However, Si-based single junction suffers from transmission and thermalization losses. Therefore, to overcome these losses, tandem solar cells (TSCs) are established. Here, 2-terminal a-Si:H/µc-Si:H based TSC is simulated and examined through Silvaco-TCAD tool. In the proposed work, two absorber materials viz. a-Si:H with bandgap (Eg=1.7 eV) for top cell and µc-Si:H (Eg=1.16 eV) for bottom cell are used through interlayer (ITO). The complete performance of TSC is studied by changing the thickness of both top absorber layer (TopABL) (50-300 nm) and bottom (BottomABL) (500 to 3000 nm) cells, collectively and analyzed through PV parameters, EQE and JV curve. The champion tandem device delivers high values of PV parameters viz. short circuit current density (JSC) of 10.21 mA/cm2, open circuit voltage (VOC) of 1.35 V, fill factor (FF) of 72.3% and power conversion efficiency (PCE) of 10% at optimal values as TopABL of 200 nm and BottomABL of 2500 nm.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126240829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

A Study on Absorptance Enhancement of Multilayer Graphene Metamaterial in Terahertz Regime 多层石墨烯超材料在太赫兹波段的吸收增强研究

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032831

M. Mishra, T. Sahu, S. K. Tripathy, N. Sahoo, N. Sahoo

引用次数: 0

Work-Function Variability impact on the performance of Vertically Stacked GAA FETs for sub-7nm Technology Node 工作功能可变性对sub-7nm技术节点垂直堆叠GAA场效应管性能的影响

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032850

E. Mohapatra, Devika Jena, Sanghamitra Das, J. Jena, Tara Prasanna Dash

引用次数: 1

FPGA for secured hardware & IP ownership 用于安全硬件和IP所有权的FPGA

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032935

S. Tripathi, Abhishek Kumar, Mufti Mahmud

引用次数: 1

Analysis of certain electrical properties in Silicon nanowire field-effect transistors with high-κ HfO2 as gate dielectrics 以高κ HfO2为栅极介质的硅纳米线场效应晶体管的某些电学特性分析

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032875

S. Das, Bibek Chettri, Prasanna Karki, P. Chettri, U. Deka, B. Sharma

引用次数: 1

IoT Based Diabetic Retinopathy Monitoring System 基于物联网的糖尿病视网膜病变监测系统

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032854

Kalpana Murugan, Tarun Srinivasulu Gondrala, Arani Hariprasad Vigneesh, Ushasree Nandimandalam

{"title":"IoT Based Diabetic Retinopathy Monitoring System","authors":"Kalpana Murugan, Tarun Srinivasulu Gondrala, Arani Hariprasad Vigneesh, Ushasree Nandimandalam","doi":"10.1109/EDKCON56221.2022.10032854","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032854","url":null,"abstract":"In recent decades, people are majorly exaggerated by Diabetes mellitus, a chronically metabolism-based disorder, usually seen in middle-aged and elderly-aged groups. Diabetic Mellitus mainly causes visual impairment, skin diseases, hearing impairment, blood vessel narrowing, other nerve diseases, and many adverse effects on the human body. Visual impairment causes complete blindness of the eye. This visual impairment of diabetes is known as diabetic retinopathy. This article mainly focuses on the diabetic retinopathy observed in patients tormented with diabetes mellitus. This type of diabetes needs both an endocrinologist and an ophthalmologist monitoring. The continuous monitoring of both specialists is essential for diabetic retinopathy torment. In recent years, the electronic world maturated the medicinal field into standalone monitoring without the help of external support associated with the field of work and one such mature is IoT or the Internet of Things. The Internet of things impacts every system’s outgoingness to the beneficial. The proposed system makes classification on captures by ESP32 camera depending on the criticalness using the Teachable Machine, acting as a black box for classification and redirects the results to Blynk application through IoT. It classifies all the patient eye informative images and clarifies the concurrent stage of the diabetic patient. The proposed IoT Based Diabetic retinopathy monitoring system efficiently integrates with the Internet of things simplifies the systematic screening procedures for diabetic retinopathy with more efficiency and increased patient coverage and cost-effectiveness.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114472219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analog/RF Performance Analysis of a Novel Si0.9Ge0.1/InAs Charge Plasma-Based Junctionless TFET 新型Si0.9Ge0.1/InAs电荷等离子体无结TFET模拟/射频性能分析

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032951

K. Kumar, Ajay Kumar, S. Sharma

引用次数: 1

IoT Based Intelligent System for Covid - 19 hotspot detection by CNN Crowd Density Algorithm 基于CNN人群密度算法的物联网智能Covid - 19热点检测系统

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032948

Papiya Das, Indrajit Das, Soumyadeep Chakraborty, Sougata Mandal, Subhrapratim Nath

{"title":"IoT Based Intelligent System for Covid - 19 hotspot detection by CNN Crowd Density Algorithm","authors":"Papiya Das, Indrajit Das, Soumyadeep Chakraborty, Sougata Mandal, Subhrapratim Nath","doi":"10.1109/EDKCON56221.2022.10032948","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032948","url":null,"abstract":"The worldwide health crisis is caused by the widespread of the Covid-19 virus. The virus is transmitted through droplet infection and it causes the common cold, coughing, sneezing, and also respiratory distress in the infected person and sometimes becomes fatal causing death. As the world battles against covid-19, the proposed approach can help to contain the clustering of covid hotspot areas for the treatment of over a million affected patients. Drones/ Unmanned Aerial Vehicles (UAVs) offer a great deal of support in this pandemic. As suggested in this research, they can also be used to get to remote places more quickly and efficiently than with conventional means. In the hospital’s control room, there would be a person in command of the ambulance drone. For hotspot area detection, the drone would be equipped with FLIR camera and for detection and recognition of face the video transmission is used by raspberry pi camera. The detection of face is done by Haar cascade Classifier and recognition of the face with LBPH algorithm. This is used for identify the each individual’s medical history or can be verified by Aadhar Card. Face recognition between still and video photos was compared, and the average accuracy of still and video images was 99.8 percent and 99.57 percent, respectively. To find the hotspot area is to use the CNN Crowd counting algorithm. If the threshold value is less than equal to 0.5 than it is hotspot area , if it is greater than 0.5 and less than equal to 0.75 than it is semi-normal area , if it is greater than 0.75 and less than equal to 1 than it is normal area .","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127914207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0