以高κ HfO2为栅极介质的硅纳米线场效应晶体管的某些电学特性分析

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI:10.1109/EDKCON56221.2022.10032875

S. Das, Bibek Chettri, Prasanna Karki, P. Chettri, U. Deka, B. Sharma

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引用次数: 1

摘要

在这项研究中，我们提出了一个基于sinw的高HfO2准弹道MOSFET的I-V特性作为栅极介电体。在这里，我们发现了生成数据和TCAD建模数据之间值得称赞的一致性。与QBD相比，高hfo2模型的SiNW MOSFET漏极电流稳步增加，尽管幅度较小。

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Analysis of certain electrical properties in Silicon nanowire field-effect transistors with high-κ HfO2 as gate dielectrics

In this study, we proposed that the I-V properties of a SiNW-based Quasi Ballistic MOSFET with high- HfO2 act as gate dielectrics. Here, we discovered a commendable agreement between the produced and TCAD modelled data. The drain current steadily increases in the proposed SiNW MOSFET with high-HfO2 model, albeit at a smaller magnitude as compared to QBD.

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2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

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