{"title":"化合物半导体/硅基圆柱环绕双金属栅极无结累加模式(CS-DMG-JAM) MOSFET高频与开关应用的比较研究","authors":"Sumedha Gupta, N. Pandey, R. Gupta","doi":"10.1109/EDKCON56221.2022.10032896","DOIUrl":null,"url":null,"abstract":"This paper introduces a comparison between compound semiconductors (GaN, GaAs, InP) and silicon- based Cylindrical Surrounding Dual- Metal Gate Junctionless Accumulation Mode (CS-DMG-JAM) MOSFET for high frequency and high switching applications. Several parameters including drain current, transconductance, output conductance, Maximum Transducer Power Gain (MTPG), current gain, cutoff frequency, subthreshold slope, Ion/Ioff ratio have been analysed for the considered device. Results indicate better performance of GaN- based device and thereby proves to be more applicable for industrial and aeronautical applications requiring high frequency. All the simulations are performed using ATLAS 3-D device simulator.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparative study of Compound Semiconductors/ Silicon- based Cylindrical Surrounding Dual-Metal Gate Junctionless Accumulation-Mode (CS-DMG-JAM) MOSFET for High Frequency and Switching Applications\",\"authors\":\"Sumedha Gupta, N. Pandey, R. Gupta\",\"doi\":\"10.1109/EDKCON56221.2022.10032896\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper introduces a comparison between compound semiconductors (GaN, GaAs, InP) and silicon- based Cylindrical Surrounding Dual- Metal Gate Junctionless Accumulation Mode (CS-DMG-JAM) MOSFET for high frequency and high switching applications. Several parameters including drain current, transconductance, output conductance, Maximum Transducer Power Gain (MTPG), current gain, cutoff frequency, subthreshold slope, Ion/Ioff ratio have been analysed for the considered device. Results indicate better performance of GaN- based device and thereby proves to be more applicable for industrial and aeronautical applications requiring high frequency. All the simulations are performed using ATLAS 3-D device simulator.\",\"PeriodicalId\":296883,\"journal\":{\"name\":\"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDKCON56221.2022.10032896\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDKCON56221.2022.10032896","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparative study of Compound Semiconductors/ Silicon- based Cylindrical Surrounding Dual-Metal Gate Junctionless Accumulation-Mode (CS-DMG-JAM) MOSFET for High Frequency and Switching Applications
This paper introduces a comparison between compound semiconductors (GaN, GaAs, InP) and silicon- based Cylindrical Surrounding Dual- Metal Gate Junctionless Accumulation Mode (CS-DMG-JAM) MOSFET for high frequency and high switching applications. Several parameters including drain current, transconductance, output conductance, Maximum Transducer Power Gain (MTPG), current gain, cutoff frequency, subthreshold slope, Ion/Ioff ratio have been analysed for the considered device. Results indicate better performance of GaN- based device and thereby proves to be more applicable for industrial and aeronautical applications requiring high frequency. All the simulations are performed using ATLAS 3-D device simulator.
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