Comparative study of Compound Semiconductors/ Silicon- based Cylindrical Surrounding Dual-Metal Gate Junctionless Accumulation-Mode (CS-DMG-JAM) MOSFET for High Frequency and Switching Applications

Abstract

This paper introduces a comparison between compound semiconductors (GaN, GaAs, InP) and silicon- based Cylindrical Surrounding Dual- Metal Gate Junctionless Accumulation Mode (CS-DMG-JAM) MOSFET for high frequency and high switching applications. Several parameters including drain current, transconductance, output conductance, Maximum Transducer Power Gain (MTPG), current gain, cutoff frequency, subthreshold slope, Ion/Ioff ratio have been analysed for the considered device. Results indicate better performance of GaN- based device and thereby proves to be more applicable for industrial and aeronautical applications requiring high frequency. All the simulations are performed using ATLAS 3-D device simulator.