Trench Gate JAM Dielectric Modulated Nanowire FET (TG-JAM-DM-NWFET) Biosensor

In this paper, a novel design for biosensor named as Trench Gate Junction Accumulation Mode Dielectric Modulated Nanowire FET (TG-JAM-DM-NWFET) has been proposed for the identification of biomolecules linked to various diseases without the use of labels. This work is based on silicon nanowire FET operating in the Junction Accumulation Mode (JAM), which has a cylindrical Gate-All-Around topology. To the best of our knowledge, there is no published design for such a nanowire FET biosensor with a Trench Gate configuration. This design will be more suitable for biosensing applications thanks to the benefits of both the Trench Gate and the JAM cylindrical Gate-All-Around. Comparative analysis of TG-JAM-DM-NWFET has been performed with Normal Gate All Around Nanowire FET (NG-GAA-NWFET) based biosensor immobilizing various neutral biomolecules such as streptavidin, biotin, ferro-cytochrome c, keratin, and gelatin. For the case of neutral ferro-cytochrome c biomolecule immobilization in the nanocavity region, it has been shown that the proposed design, when compared to a normal gate all around nanowire FET, has 113.80% higher ION current sensitivity, 3088.91% increase in switching ratio, 5.11% improvement in subthreshold slope, and 1652.63% improvement in leakage current.