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2022 IEEE International Flexible Electronics Technology Conference (IFETC)最新文献

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Hetero-doped Silicon Modulator with Bandwidth Expansion 带宽扩展的异质掺杂硅调制器
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948504
Huajiang Yuan, Jia Zhao, Chonglei Sun
{"title":"Hetero-doped Silicon Modulator with Bandwidth Expansion","authors":"Huajiang Yuan, Jia Zhao, Chonglei Sun","doi":"10.1109/IFETC53656.2022.9948504","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948504","url":null,"abstract":"In order to improve the phase shift efficiency of all silicon modulator, we designed an L-type pn junction doping structure, but the huge junction capacitance limis the bandwidth of the modulator. So we use feedback circuit to compensate it. The phase shift efficiency of the optimized modulator is 1.2~2.2V • cm at 1~4 V bias. And the bandwidth can be increased from 20GHz to 30GHz, which is expanded by nearly 50%.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124724839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Computing-in-Memory Cell Design based on LTPO Hybrid Thin Film Transistor Integration 基于LTPO混合薄膜晶体管集成的内存计算单元设计
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948500
Liankai Zheng, Yu Huang, Xiaojun Guo
{"title":"A Computing-in-Memory Cell Design based on LTPO Hybrid Thin Film Transistor Integration","authors":"Liankai Zheng, Yu Huang, Xiaojun Guo","doi":"10.1109/IFETC53656.2022.9948500","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948500","url":null,"abstract":"This paper presents a compute-in-memory (CIM) cell design based on the low-temperature polycrystalline-silicon (LTPS) oxide (LTPO) hybrid thin-film transistor (TFT) technology. The weight of the cell is quantized to 4 bits though 4 LTPS TFTs of different width-to-length ratios. The weights are able to be maintained for long-term operation with ultra-low leakage amorphous indium-gallium-zinc-oxide (a-IGZO) TFT switches. A CIM array is designed to implement a 3-layer MLP neural network for MNIST dataset recognition, which can achieve recognition accuracy of 98% even at a 5% relative threshold voltage fluctuation of the LTPS TFT.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128177847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Microneedle Array-based Dry ECG Electrode With High Recording Performance for Healthcare Applications 一种用于医疗保健应用的高记录性能的微针阵列干式ECG电极
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948534
Fan Ye, Minghao Wang, Jiahui Xu, Mingyi Jin, Bowen Ji, Yin Chen, Yuhua Cheng, Gaofeng Wang
{"title":"A Microneedle Array-based Dry ECG Electrode With High Recording Performance for Healthcare Applications","authors":"Fan Ye, Minghao Wang, Jiahui Xu, Mingyi Jin, Bowen Ji, Yin Chen, Yuhua Cheng, Gaofeng Wang","doi":"10.1109/IFETC53656.2022.9948534","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948534","url":null,"abstract":"This paper reports a microneedle array (MNA) dry electrode for electrocardiogram (ECG) recordings without skin preparation. By using back side exposure and Through Polymer Via (TPV) technology, for the first time, the SU-8 microneedle arrays are fabricated on parylene C film and bonded with commercial wet electrode cap. The device has minimal invasive and can pierce through the corneum. Compared with conventional wet electrode, the contact impedance of the MNA dry electrode is lower and the signal quality of the MNA dry electrodes is higher both at rest and after motion. Since conducting gels are not required during ECG recording, the dry electrode shows potential application in long-term clinical health monitoring.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130603301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Yarn based UV photodetectors for E-textiles 用于电子纺织品的纱线紫外光电探测器
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948435
G. Khandelwal, Abhishek Singh Dahiya, R. Dahiya
{"title":"Yarn based UV photodetectors for E-textiles","authors":"G. Khandelwal, Abhishek Singh Dahiya, R. Dahiya","doi":"10.1109/IFETC53656.2022.9948435","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948435","url":null,"abstract":"Flexible electronic devices and circuits in yarn form factor are essential for comfortable and conformal e-Textiles. Such smart textiles could offer new opportunities for applications such as environment monitoring, and healthcare etc. In this work, we present a yarn-based flexible UV photodetector (PDs). The presented PD was realised by creating a network of ZnO nanowires on the stainless-steel yarn using a facile solution phase route. The PDs exhibit a response/recovery time of 12 s/9.9 s with a high responsivity of ∼14 A/W at an applied bias of 5 V. Moreover, the PDs showed a high detectivity of ∼1013 Jones. The obtained results confirm the development of a high performance, easy to integrate yarn-based PDs for smart e-Textiles.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129257720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Organic and carbon nanotube electronics for flexible nanoscale high-frequency circuits and physical unclonable function 用于柔性纳米级高频电路和物理不可克隆功能的有机和碳纳米管电子学
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948438
Jonas Schroeder, James W. Borchert, Patrick Schuster, P. Eder, Stefan Heiserer, J. Biba, G. Duesberg, U. Rührmair, R. Weitz
{"title":"Organic and carbon nanotube electronics for flexible nanoscale high-frequency circuits and physical unclonable function","authors":"Jonas Schroeder, James W. Borchert, Patrick Schuster, P. Eder, Stefan Heiserer, J. Biba, G. Duesberg, U. Rührmair, R. Weitz","doi":"10.1109/IFETC53656.2022.9948438","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948438","url":null,"abstract":"Thin films of carbonaceous materials, such as organic semiconductors and carbon nanotubes, continue to show promise for various novel electronics applications, especially where flexibility and large-area processing are important factors. In particular, exciting progress has recently been made in the development of flexible nanoscale high-frequency organic transistors and circuits. In addition, new application spaces continue to emerge for carbon electronics. Here, a burgeoning opportunity in the field of physical unclonable function (PUF) is discussed, with multi-contact field-effect transistors based on random networks of unsorted single-walled carbon nanotubes (SWCNTs) as a potential platform for scalable electronic PUFs.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125425053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design Thinking for Human Interaction with Flexible Electronics 柔性电子人机交互的设计思维
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948482
Mitsuhiko Nagata
{"title":"Design Thinking for Human Interaction with Flexible Electronics","authors":"Mitsuhiko Nagata","doi":"10.1109/IFETC53656.2022.9948482","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948482","url":null,"abstract":"With increasing demand of better human-machine interaction with electronic devices, a flexible form factor in these devices is key for transparency in connection between human and machine. A variety of new approaches for human-machine interaction are available. These include voice, gesture, eye motion, brain wave and so on. Flexible electronics technologies could be key to enhance interaction with the human. To achieve a better intuitional connection, a design thinking approach is essential. This paper will review key factors to adopt this design thinking approach for flexible electronics.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121351453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-voltage LTPS TFT Shift Register for Active Matric Digital Microfluidics 用于有源矩阵数字微流体的高压LTPS TFT移位寄存器
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948515
S. Jiang, D. Wang, Y. Wei, H. Ma, J. Yu
{"title":"High-voltage LTPS TFT Shift Register for Active Matric Digital Microfluidics","authors":"S. Jiang, D. Wang, Y. Wei, H. Ma, J. Yu","doi":"10.1109/IFETC53656.2022.9948515","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948515","url":null,"abstract":"A high voltage series-in-parallel-out shift register that use low temperature poly-silicon thin film transistor has been proposed. This circuit can provide driving voltage for the microfluidic chips based on active matrix, and is able to meet the high voltage requirements. We have simulated the shift storage unit and its multi-stage shift register, and the circuit can achieve 30 V, 100 kHz high voltage output. This work fills the vacancy of high voltage drive circuits in active digital microfluidic chips.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133504471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analysis of bioparticles chaining under electrode-isolated dielectrophoresis towards flexible BioMEMS application 电极分离介质电泳下生物颗粒链化的柔性生物机械应用分析
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948532
C. A. T. Tee, B. Majlis, Mohd Anuar Md Ali, A. Kayani, Yeo Wey Ping, Song Le, Zheng Yelong
{"title":"Analysis of bioparticles chaining under electrode-isolated dielectrophoresis towards flexible BioMEMS application","authors":"C. A. T. Tee, B. Majlis, Mohd Anuar Md Ali, A. Kayani, Yeo Wey Ping, Song Le, Zheng Yelong","doi":"10.1109/IFETC53656.2022.9948532","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948532","url":null,"abstract":"Formation of bioparticle chaining using flexible bioMEMS is highly potential for various applications. Using electrical actuation to form bioparticle chain is established method, however, the effect of direct contact between electrical source and bioparticle in manipulation affects the bioparticles. In this work, we demonstrated the ability to form bioparticle chains in both method, either with direct-contact and non-contact between bioparticles and electrode. We analyzed the feasibility of chaining as well as the effect of isolator thin layer upon the chain length and direction.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134647263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Artificial Synapse based on Dual-gate Organic Thin-Film Transistor 基于双栅有机薄膜晶体管的人工突触
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948479
Weihong Yang, Xiaokuan Yin, Lei Han, S. Ogier, Xiaojun Guo
{"title":"Artificial Synapse based on Dual-gate Organic Thin-Film Transistor","authors":"Weihong Yang, Xiaokuan Yin, Lei Han, S. Ogier, Xiaojun Guo","doi":"10.1109/IFETC53656.2022.9948479","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948479","url":null,"abstract":"This work presents the possibility of incorporating both biological synaptic plasticity and hysteresis-free switching properties in the same organic thin-film transistor (OTFT) device by taking advantages of the dual-gate structure. It is achieved by forming a high-quality top channel-dielectric interface, while leaving the bottom channel-dielectric interface with charge traps. When only the top-gate being switched, the device exhibits hysteresis-free switching properties. When the two gates are connected, charge trapping/de-trapping at the bottom interface brings biological synaptic plasticity properties. Photo-enhanced synaptic properties are also presented with this device.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122591983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
N-i-p perovskite solar cells on opaque flexible stainless-steel substrate 不透明柔性不锈钢衬底上的N-i-p钙钛矿太阳能电池
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948531
Sandeep Kumar, Nisheka Anadkat, S. Avasthi
{"title":"N-i-p perovskite solar cells on opaque flexible stainless-steel substrate","authors":"Sandeep Kumar, Nisheka Anadkat, S. Avasthi","doi":"10.1109/IFETC53656.2022.9948531","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948531","url":null,"abstract":"Metal-halide perovskite solar cells are gaining tremendous attention due to their remarkable efficiencies and applications to niche flexible markets. In this work, we report n-i-p configuration of perovskite solar cell (light irradiated from n-side) fabricated on opaque stainless-steel substrate. The promising acetamidinium-substituted methyl ammonium lead halide is used as an absorber. Thermally deposited semi-transparent Ag (≈ 15 nm) is used as a top-illumination contact. The best device exhibited a power conversion efficiency ≈ 5%; having a short-circuit current density (Jsc) of -10.73 mA/cm2, open circuit-voltage (Voc) of 1V, and fill-factor (FF) of 47%. The poor-performance of the device is mainly attributed to low-transmission from thin Ag top-contact. The efforts are in progress to achieve better performing devices.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122607938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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