{"title":"带宽扩展的异质掺杂硅调制器","authors":"Huajiang Yuan, Jia Zhao, Chonglei Sun","doi":"10.1109/IFETC53656.2022.9948504","DOIUrl":null,"url":null,"abstract":"In order to improve the phase shift efficiency of all silicon modulator, we designed an L-type pn junction doping structure, but the huge junction capacitance limis the bandwidth of the modulator. So we use feedback circuit to compensate it. The phase shift efficiency of the optimized modulator is 1.2~2.2V • cm at 1~4 V bias. And the bandwidth can be increased from 20GHz to 30GHz, which is expanded by nearly 50%.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Hetero-doped Silicon Modulator with Bandwidth Expansion\",\"authors\":\"Huajiang Yuan, Jia Zhao, Chonglei Sun\",\"doi\":\"10.1109/IFETC53656.2022.9948504\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to improve the phase shift efficiency of all silicon modulator, we designed an L-type pn junction doping structure, but the huge junction capacitance limis the bandwidth of the modulator. So we use feedback circuit to compensate it. The phase shift efficiency of the optimized modulator is 1.2~2.2V • cm at 1~4 V bias. And the bandwidth can be increased from 20GHz to 30GHz, which is expanded by nearly 50%.\",\"PeriodicalId\":289035,\"journal\":{\"name\":\"2022 IEEE International Flexible Electronics Technology Conference (IFETC)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-08-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Flexible Electronics Technology Conference (IFETC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IFETC53656.2022.9948504\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IFETC53656.2022.9948504","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hetero-doped Silicon Modulator with Bandwidth Expansion
In order to improve the phase shift efficiency of all silicon modulator, we designed an L-type pn junction doping structure, but the huge junction capacitance limis the bandwidth of the modulator. So we use feedback circuit to compensate it. The phase shift efficiency of the optimized modulator is 1.2~2.2V • cm at 1~4 V bias. And the bandwidth can be increased from 20GHz to 30GHz, which is expanded by nearly 50%.
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