发布求助
文献互助 智能选刊 最新文献

2022 IEEE International Flexible Electronics Technology Conference (IFETC)最新文献

筛选
英文 中文
A stretchable conductor based on shrinkable fiber mat for wearable joule heating 一种基于可收缩纤维垫的可拉伸导体，用于可穿戴焦耳加热
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948523
Qingsong Li, Jing Sun, Guanglin Li, Zhiyuan Liu
{"title":"A stretchable conductor based on shrinkable fiber mat for wearable joule heating","authors":"Qingsong Li, Jing Sun, Guanglin Li, Zhiyuan Liu","doi":"10.1109/IFETC53656.2022.9948523","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948523","url":null,"abstract":"Wearable heaters have attracted great interest worldwide due to their significant applications in thermal therapy and keeping warm. Here, a strain-insensitive conductor was developed by depositing a thin layer of gold film on a shrinkable fiber mat. The conductor showed high stretchability and strain insensitivity. When the conductor was used for joule heating, it demonstrated high stability and reliability even during stretching.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120818165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
PLENARY 5: Flexible Integrated Circuits: Design, Manufacture and Applications 全体会议5:柔性集成电路:设计、制造和应用
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/ifetc53656.2022.9948514
{"title":"PLENARY 5: Flexible Integrated Circuits: Design, Manufacture and Applications","authors":"","doi":"10.1109/ifetc53656.2022.9948514","DOIUrl":"https://doi.org/10.1109/ifetc53656.2022.9948514","url":null,"abstract":"","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125349872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and evaluation of a highly robust MEMS Pirani vacuum gauge based on porous silicon thermal insulation layer 基于多孔硅保温层的高鲁棒MEMS皮拉尼真空计的设计与评价
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948441
Zichao Zhang, J. Tao, Yan Li
{"title":"Design and evaluation of a highly robust MEMS Pirani vacuum gauge based on porous silicon thermal insulation layer","authors":"Zichao Zhang, J. Tao, Yan Li","doi":"10.1109/IFETC53656.2022.9948441","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948441","url":null,"abstract":"Vacuum gauges based on Micro-Electro-Mechanical System (MEMS) technology have the advantages of small size, high reliability and low cost, so they are widely used in semiconductor, chemical, laboratory and aerospace fields. In this paper, a high-reliability MEMS Pirani vacuum gauge based on a porous silicon thermal insulation layer is designed and fabricated, and good measurement accuracy is achieved in the vacuum range of 0.01~105 Pa. The developed porous silicon support material developed achieves a porosity of 68% and a thermal conductivity of 3~4 W/(m • K), and the surface morphology of the porous silicon is smooth, which is compatible with standard semiconductor processes such as metal electron beam evaporation. The proposed MEMS Pirani vacuum gauge containing no suspended film structure has good mechanical stability and is not affected by violent gas convection shock and mechanical vibration.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115095514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Selective Doping of a Single Ambipolar Organic Semiconductor for Device Fabrication 用于器件制造的单双极性有机半导体的选择性掺杂
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948510
Yanqin Chen, Yu Liu, Yuanyuan Hu
{"title":"Selective Doping of a Single Ambipolar Organic Semiconductor for Device Fabrication","authors":"Yanqin Chen, Yu Liu, Yuanyuan Hu","doi":"10.1109/IFETC53656.2022.9948510","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948510","url":null,"abstract":"The idea of acquiring p- and n-type organic semiconductors (OSCs) through controllable doping of a single OSC is highly attractive. However, the realization of this idea remains challenging due to the difficulties in achieving effective p- and n-doping on a single OSC simultaneously. Herein, by synthesizing a solution-processable conjugated polymer with well-balanced ambipolar transport as the host semiconductor and using appropriate dopants, we demonstrate the feasibility of obtaining p- and n-type OSCs from a single OSC. The successful doping control of the polarity and electrical property of the OSC is confirmed by electrical characterizations on doped devices. Then, solution-processed organic inverters based on the p- and n-doped OSC films are constructed. The results provide a paradigm for utilizing doping technique in organic semiconductor devices.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122620782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multiple design strategies of flexible piezoresistive pressure sensors in radial artery pulse signals monitoring 柔性压阻式压力传感器在桡动脉脉搏信号监测中的多种设计策略
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948471
Zhiran Shen, Tian Hang, Xi Xie, Hui-Jiuan Chen, Fanmao Liu
{"title":"Multiple design strategies of flexible piezoresistive pressure sensors in radial artery pulse signals monitoring","authors":"Zhiran Shen, Tian Hang, Xi Xie, Hui-Jiuan Chen, Fanmao Liu","doi":"10.1109/IFETC53656.2022.9948471","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948471","url":null,"abstract":"Noninvasive monitoring of peripheral arterial pulse wave is highly desirable for the diagnosis and prevention of cardiovascular diseases. Recently, reliable and long-term pulse wave signals monitoring through flexible pressure sensors have attracted extensive attention in both academics and industries. Here, a class of flexible piezoresistive pressure sensors with multiple types of core microstructures (nanowrinkles, microneedles, micropillars) and device-assembly designs (coplanar, sandwiched, and patch structure) have been fabricated and systematically evaluated for wearable electronic applications. With the assistance of proper external pre-loads, all types of devices can realize real-time monitoring of arterial pulse signals. The different electro-mechanical behaviors determine by the core microstructures and device assembly designs are not a simple distinction of performance, but show respective advantages to meet appropriate application requirements. This study would contribute to a common strategy for developing the next generation of wearable electronic devices in healthcare.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125682225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vertically Stacked Printable Organic Photodetectors for High-Performance Color Sensing 用于高性能色彩感应的垂直堆叠可打印有机光电探测器
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948486
V. Pecunia
{"title":"Vertically Stacked Printable Organic Photodetectors for High-Performance Color Sensing","authors":"V. Pecunia","doi":"10.1109/IFETC53656.2022.9948486","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948486","url":null,"abstract":"Wavelength-selective, vertically stacked photodetectors based on printable organic semiconductors have considerable potential for delivering easy-to-make, high-performance multicolor sensors. Herein, we present the strategies we have developed to realize this device architecture and analyze its upscaling potential.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115802106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Novel Bioelectrode Design with an OTFT Switch for Dynamic Discharging 一种具有OTFT开关的动态放电生物电极设计
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948512
Taoming Guo, Chen Jiang
{"title":"A Novel Bioelectrode Design with an OTFT Switch for Dynamic Discharging","authors":"Taoming Guo, Chen Jiang","doi":"10.1109/IFETC53656.2022.9948512","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948512","url":null,"abstract":"As an important interface between biological tissues and flexible electronics, bioelectrodes suffered from charge accumulation during long-time sensing or stimulation, which significantly affects electrode lifespan and signal transmission. This paper introduces an OTFT switch paralleled to the bioelectrode to discharge electrodes and maintain their voltage, which have the potential to prolong the lifespan and stability of bioelectrodes, while maintaining their flexibility.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130930295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Highly sensitive, flexible, force sensors based on short channel devices 高灵敏度，柔性，基于短通道设备的力传感器
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948529
A. Mascia, A. Spanu, A. Bonfiglio, P. Cosseddu
{"title":"Highly sensitive, flexible, force sensors based on short channel devices","authors":"A. Mascia, A. Spanu, A. Bonfiglio, P. Cosseddu","doi":"10.1109/IFETC53656.2022.9948529","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948529","url":null,"abstract":"In this manuscript we report about a novel concept for the fabrication of highly sensitive, flexible force sensors. The proposed devices have been fabricated on a flexible plastic substrates, using an Organic Charge Modulated Field Effect Transistor configuration. The transistor-based sensor is characterized by a floating gate coupled with a Piezoelectric material, namely PVDF. The main step forward in this work consists of the employment of short channel OTFT, fabricated by means of an easy, up-scalable and highly reproducible process, allowing to achieve a much higher sensitivity of the final device. Such an approach could be useful for all those applications in which high device density and high sensor sensitivity is required.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133508532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental and simulation studies of strong coupling between Frenkel excitons and surface plasmon Frenkel激子与表面等离子体激元强耦合的实验与模拟研究
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948517
C. A. T. Tee, M. Khushaini, Nur Hidayah Azeman, Tg Hasnan Tg Abdul Aziz, A. Bakar, B. Majlis, A. Zain, Yeo Wey Ping, Xuan Zongwei
{"title":"Experimental and simulation studies of strong coupling between Frenkel excitons and surface plasmon","authors":"C. A. T. Tee, M. Khushaini, Nur Hidayah Azeman, Tg Hasnan Tg Abdul Aziz, A. Bakar, B. Majlis, A. Zain, Yeo Wey Ping, Xuan Zongwei","doi":"10.1109/IFETC53656.2022.9948517","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948517","url":null,"abstract":"We present experimental and simulation studies of the strong coupling (SC) between a collection of identical Frenkel excitons and the surface plasmon (SP). We introduced a novel organic material to observe experimentally the SC regime. We demonstrate that the behaviour of the SC regime can be simulated by dipole sources in the simulation model to imitate the Frenkel excitons. The simulation model demonstrated a close match to the experimental observation, indicating the applicability of the proposed model.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133588874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Responsive Organometallic Semiconductors for Optoelectronic Applications 光电应用中的响应式有机金属半导体
2022 IEEE International Flexible Electronics Technology Conference (IFETC) Pub Date : 2022-08-21 DOI: 10.1109/IFETC53656.2022.9948522
Qiang Zhao
{"title":"Responsive Organometallic Semiconductors for Optoelectronic Applications","authors":"Qiang Zhao","doi":"10.1109/IFETC53656.2022.9948522","DOIUrl":"https://doi.org/10.1109/IFETC53656.2022.9948522","url":null,"abstract":"In recent years, as the core content of organic optoelectronic research, organic semiconductor materials and their optoelectronic applications have become the research focus of organic optoelectronics field. Conventional organic semiconductors are mostly based on pure organic systems, which can only utilize singlet excited states and cannot effectively utilize triplet states. Based on the spin-orbit coupling effect of metal atoms, organometallic semiconductors break through this limitation, and can utilize both singlet and triplet excited states ( Fig. 1 ). Moreover, they exhibit excellent phosphorescence properties, such as high luminescence efficiency, long luminescence lifetime, and easily tunable luminescence wavelength ( Fig. 1 ). Especially, their long phosphorescence lifetime is very suitable for application in time-resolved luminescence imaging, including time-gated imaging and lifetime imaging.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115805014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信