{"title":"高灵敏度,柔性,基于短通道设备的力传感器","authors":"A. Mascia, A. Spanu, A. Bonfiglio, P. Cosseddu","doi":"10.1109/IFETC53656.2022.9948529","DOIUrl":null,"url":null,"abstract":"In this manuscript we report about a novel concept for the fabrication of highly sensitive, flexible force sensors. The proposed devices have been fabricated on a flexible plastic substrates, using an Organic Charge Modulated Field Effect Transistor configuration. The transistor-based sensor is characterized by a floating gate coupled with a Piezoelectric material, namely PVDF. The main step forward in this work consists of the employment of short channel OTFT, fabricated by means of an easy, up-scalable and highly reproducible process, allowing to achieve a much higher sensitivity of the final device. Such an approach could be useful for all those applications in which high device density and high sensor sensitivity is required.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"152 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Highly sensitive, flexible, force sensors based on short channel devices\",\"authors\":\"A. Mascia, A. Spanu, A. Bonfiglio, P. Cosseddu\",\"doi\":\"10.1109/IFETC53656.2022.9948529\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this manuscript we report about a novel concept for the fabrication of highly sensitive, flexible force sensors. The proposed devices have been fabricated on a flexible plastic substrates, using an Organic Charge Modulated Field Effect Transistor configuration. The transistor-based sensor is characterized by a floating gate coupled with a Piezoelectric material, namely PVDF. The main step forward in this work consists of the employment of short channel OTFT, fabricated by means of an easy, up-scalable and highly reproducible process, allowing to achieve a much higher sensitivity of the final device. Such an approach could be useful for all those applications in which high device density and high sensor sensitivity is required.\",\"PeriodicalId\":289035,\"journal\":{\"name\":\"2022 IEEE International Flexible Electronics Technology Conference (IFETC)\",\"volume\":\"152 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-08-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Flexible Electronics Technology Conference (IFETC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IFETC53656.2022.9948529\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IFETC53656.2022.9948529","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Highly sensitive, flexible, force sensors based on short channel devices
In this manuscript we report about a novel concept for the fabrication of highly sensitive, flexible force sensors. The proposed devices have been fabricated on a flexible plastic substrates, using an Organic Charge Modulated Field Effect Transistor configuration. The transistor-based sensor is characterized by a floating gate coupled with a Piezoelectric material, namely PVDF. The main step forward in this work consists of the employment of short channel OTFT, fabricated by means of an easy, up-scalable and highly reproducible process, allowing to achieve a much higher sensitivity of the final device. Such an approach could be useful for all those applications in which high device density and high sensor sensitivity is required.