Selective Doping of a Single Ambipolar Organic Semiconductor for Device Fabrication

Yanqin Chen, Yu Liu, Yuanyuan Hu
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Abstract

The idea of acquiring p- and n-type organic semiconductors (OSCs) through controllable doping of a single OSC is highly attractive. However, the realization of this idea remains challenging due to the difficulties in achieving effective p- and n-doping on a single OSC simultaneously. Herein, by synthesizing a solution-processable conjugated polymer with well-balanced ambipolar transport as the host semiconductor and using appropriate dopants, we demonstrate the feasibility of obtaining p- and n-type OSCs from a single OSC. The successful doping control of the polarity and electrical property of the OSC is confirmed by electrical characterizations on doped devices. Then, solution-processed organic inverters based on the p- and n-doped OSC films are constructed. The results provide a paradigm for utilizing doping technique in organic semiconductor devices.
用于器件制造的单双极性有机半导体的选择性掺杂
通过单一有机半导体的可控掺杂获得p型和n型有机半导体(OSCs)的想法是非常有吸引力的。然而,由于难以同时在单一OSC上实现有效的p-和n-掺杂,因此实现这一想法仍然具有挑战性。本文通过合成具有良好平衡双极性输运的可溶液加工共轭聚合物作为主体半导体,并使用适当的掺杂剂,证明了从单个OSC中获得p型和n型OSC的可行性。通过对掺杂器件的电学表征,证实了OSC极性和电学性能的成功掺杂控制。然后,构建了基于p和n掺杂OSC薄膜的溶液加工有机逆变器。研究结果为在有机半导体器件中应用掺杂技术提供了一个范例。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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