Artificial Synapse based on Dual-gate Organic Thin-Film Transistor

Abstract

This work presents the possibility of incorporating both biological synaptic plasticity and hysteresis-free switching properties in the same organic thin-film transistor (OTFT) device by taking advantages of the dual-gate structure. It is achieved by forming a high-quality top channel-dielectric interface, while leaving the bottom channel-dielectric interface with charge traps. When only the top-gate being switched, the device exhibits hysteresis-free switching properties. When the two gates are connected, charge trapping/de-trapping at the bottom interface brings biological synaptic plasticity properties. Photo-enhanced synaptic properties are also presented with this device.