{"title":"用于有源矩阵数字微流体的高压LTPS TFT移位寄存器","authors":"S. Jiang, D. Wang, Y. Wei, H. Ma, J. Yu","doi":"10.1109/IFETC53656.2022.9948515","DOIUrl":null,"url":null,"abstract":"A high voltage series-in-parallel-out shift register that use low temperature poly-silicon thin film transistor has been proposed. This circuit can provide driving voltage for the microfluidic chips based on active matrix, and is able to meet the high voltage requirements. We have simulated the shift storage unit and its multi-stage shift register, and the circuit can achieve 30 V, 100 kHz high voltage output. This work fills the vacancy of high voltage drive circuits in active digital microfluidic chips.","PeriodicalId":289035,"journal":{"name":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"High-voltage LTPS TFT Shift Register for Active Matric Digital Microfluidics\",\"authors\":\"S. Jiang, D. Wang, Y. Wei, H. Ma, J. Yu\",\"doi\":\"10.1109/IFETC53656.2022.9948515\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high voltage series-in-parallel-out shift register that use low temperature poly-silicon thin film transistor has been proposed. This circuit can provide driving voltage for the microfluidic chips based on active matrix, and is able to meet the high voltage requirements. We have simulated the shift storage unit and its multi-stage shift register, and the circuit can achieve 30 V, 100 kHz high voltage output. This work fills the vacancy of high voltage drive circuits in active digital microfluidic chips.\",\"PeriodicalId\":289035,\"journal\":{\"name\":\"2022 IEEE International Flexible Electronics Technology Conference (IFETC)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-08-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Flexible Electronics Technology Conference (IFETC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IFETC53656.2022.9948515\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Flexible Electronics Technology Conference (IFETC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IFETC53656.2022.9948515","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-voltage LTPS TFT Shift Register for Active Matric Digital Microfluidics
A high voltage series-in-parallel-out shift register that use low temperature poly-silicon thin film transistor has been proposed. This circuit can provide driving voltage for the microfluidic chips based on active matrix, and is able to meet the high voltage requirements. We have simulated the shift storage unit and its multi-stage shift register, and the circuit can achieve 30 V, 100 kHz high voltage output. This work fills the vacancy of high voltage drive circuits in active digital microfluidic chips.
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