发布求助
文献互助 智能选刊 最新文献

1992 International Technical Digest on Electron Devices Meeting最新文献

筛选
英文 中文
Comparison of current flash EEPROM erasing methods: stability and how to control 比较目前flash EEPROM的擦除方法:稳定性及如何控制
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307431
K. Yoshikawa, S. Yamada, J. Miyamoto, T. Suzuki, M. Oshikiri, E. Obi, Y. Hiura, K. Yamada, Y. Ohshima, S. Atsumi
{"title":"Comparison of current flash EEPROM erasing methods: stability and how to control","authors":"K. Yoshikawa, S. Yamada, J. Miyamoto, T. Suzuki, M. Oshikiri, E. Obi, Y. Hiura, K. Yamada, Y. Ohshima, S. Atsumi","doi":"10.1109/IEDM.1992.307431","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307431","url":null,"abstract":"The effects of process and device parameter fluctuations of flash EEPROM cells on the flash-erasing instabilities are systematically investigated using a simple analytical model and numerical simulation. Among various erase methods, the High voltage Source with grounded Erase (HSE) method is the most stable scheme for the control of erasing speed and erased threshold voltage distribution. The stability of HSE is caused by the reduced electric field fluctuations associated with cell parameter variations, due to the source bias effect, especially at the final stage of erasing. It is also found that the recently proposed self-convergence scheme is an effective tool for suppressing the erased-V/sub t/ distribution width, and that negative gate erase designs equipped with this method will be a powerful vehicle for the next generation scaled flash devices.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114951808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 39
Design and development of a third harmonic, 95 GHz gyroTWT 三次谐波95 GHz陀螺行波管的设计与开发
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307342
W. DeHope, G. Hu, M. Mizuhara, J. Neilson, R. Schumacher, C. Chong, A. Lin, N. Luhmann, D. Mcdermott, T. Stewart
{"title":"Design and development of a third harmonic, 95 GHz gyroTWT","authors":"W. DeHope, G. Hu, M. Mizuhara, J. Neilson, R. Schumacher, C. Chong, A. Lin, N. Luhmann, D. Mcdermott, T. Stewart","doi":"10.1109/IEDM.1992.307342","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307342","url":null,"abstract":"The design of a high power, 95 GHz gyrotron-TWT amplifier with wide bandwidth is described. The development of a complete tube is under way, capable of 10% duty operation, with predicted performance of 80 kW peak power at an efficiency of 23% and a bandwidth of 3% about 95 GHz.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114975304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Analysis of waveguide-loaded klystron cavities 波导负载速调管腔的分析
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307516
F. Friedlander
{"title":"Analysis of waveguide-loaded klystron cavities","authors":"F. Friedlander","doi":"10.1109/IEDM.1992.307516","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307516","url":null,"abstract":"To date, the design of externally coupled klystron cavities has been performed experimentally, with several weeks of fabrication and testing required to achieve the desired resonance frequency and Q for a typical new design. The application of computer-aided analysis to this design problem has achieved significant results, which are presented in this paper.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"177 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122094387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 150 GHz sub-0.1- mu m E/D MODFET MSI process 一个150 GHz sub-0.1 μ m E/D MODFET MSI工艺
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307371
H. Rohdin, A. Nagy
{"title":"A 150 GHz sub-0.1- mu m E/D MODFET MSI process","authors":"H. Rohdin, A. Nagy","doi":"10.1109/IEDM.1992.307371","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307371","url":null,"abstract":"We report a method for fabricating sub-0.1- mu m gates using conventional optical contact lithography, exploiting self-limiting notch formation in conformal PECVD oxide between ohmic contacts, and the limited lateral etch of oxide by RIE. The resulting gate openings in the oxide are very narrow ( approximately=700 AA), and quite uniform ( sigma <0.2x). 154 GHz current gain cutoff frequency has been extrapolated for a pseudomorphic InGaAs-channel E-MODFET made in this way. Functioning prescalers have been fabricated and characterized on-wafer.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128412839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Complete bipolar simulation using STORM 使用STORM完成双极模拟
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307509
S. K. Jones, A. Gérodolle, C. Lombardi, M. Schafer, C. Hill
{"title":"Complete bipolar simulation using STORM","authors":"S. K. Jones, A. Gérodolle, C. Lombardi, M. Schafer, C. Hill","doi":"10.1109/IEDM.1992.307509","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307509","url":null,"abstract":"Complete simulation of advanced double layer polysilicon bipolar technology is presented using 2D process, equipment and device modelling in the STORM simulation environment. Polysilicon emitter size scaling and the perimeter depletion effect are studied. Process simulation results for non-planar polysilicon topographies are presented and the consequences of these on the device characteristics are explored.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127028450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High-performance scaled flash-type EEPROMs with heavily oxynitrided tunnel oxide films 高氧氮化隧道氧化膜的高性能鳞片型eeprom
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307402
H. Fukuda, A. Uchiyama, T. Kuramochi, T. Hayashi, T. Iwabuchi, T. Ono, T. Takayashiki
{"title":"High-performance scaled flash-type EEPROMs with heavily oxynitrided tunnel oxide films","authors":"H. Fukuda, A. Uchiyama, T. Kuramochi, T. Hayashi, T. Iwabuchi, T. Ono, T. Takayashiki","doi":"10.1109/IEDM.1992.307402","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307402","url":null,"abstract":"We have proposed a heavy oxynitridation (RTONO) technology of the tunnel oxide, and successfully applied it to the scaled flash-type EEPROMs. Excellent program and erase (P/E) endurance properties were obtained with much small window closure (less than 6%). In addition, good P/E speeds are also obtained. The SIMS results show that a large number of N atoms (>10/sup 20/ atoms/cm/sup 3/) are incorporated into SiO/sub 2/, while the number of H atoms is decreased. Accordingly, almost no increase of trapped charge by the P/E stress is induced. Thus, this technology is the key to providing flash-EEPROM in the submicron regime.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129965524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
High performance heterojunction InGaAs/InP JFET grown by MOCVD using tertiarybutylphosphine (TBP) 利用叔丁基膦(TBP) MOCVD生长高性能异质结InGaAs/InP JFET
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307367
M. Hashemi, J. Shealy, S. Denbaars, U. Mishra
{"title":"High performance heterojunction InGaAs/InP JFET grown by MOCVD using tertiarybutylphosphine (TBP)","authors":"M. Hashemi, J. Shealy, S. Denbaars, U. Mishra","doi":"10.1109/IEDM.1992.307367","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307367","url":null,"abstract":"A new InP-JFET (Heterojunction JFET or HJFET) having p/sup +/ GaInAs as the gate material is proposed and fabricated. The large valence band discontinuity in In/sub .53/Ga/sub .47/As/InP interface ( Delta E/sub V/ approximately=0.37 eV) considerably suppresses hole injection into the channel in this HJFET as compared to homojunction InP-JFETs, allowing higher positive gate bias without g/sub m/ compression. Heterojunction JFETs (HJFETs) with gate length of 0.6 mu m have resulted in a unity current gain cut-off frequency (f/sub T/) and power gain cut-off frequency (f/sub max/) of 14.3 GHz and 37.5 GHz, respectively. Using a self-aligned structure a g/sub m/ and f/sub T/ as high as 230 mS/mm and 21 GHz were obtained, respectively. At 4 GHz, a maximum power density of 1.0 W/mm with power added efficiency of 40% was obtained. These results indicate that the HJFET is a preferred device for high speed logic circuits based on JFET technology.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122371669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A bipolar floating base detector (FBD) for CCD image sensors 用于CCD图像传感器的双极浮基检测器(FBD)
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307320
E. Roks, P. Centen, L. Sankaranarayanan, J. Slotboom, J. Bosiers, W. Huinink
{"title":"A bipolar floating base detector (FBD) for CCD image sensors","authors":"E. Roks, P. Centen, L. Sankaranarayanan, J. Slotboom, J. Bosiers, W. Huinink","doi":"10.1109/IEDM.1992.307320","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307320","url":null,"abstract":"A new bipolar charge detector, called the Floating Base Detector (FBD), fabricated in a standard CCD image sensor process, is presented. It can be used as an output structure for CCD registers or as a compact pixel-gain element. The FBD, with a charge handling capability of 30,000 electrons, has achieved a dynamic range of 84 dB over 5 MHz bandwidth which corresponds to a noise electron equivalent of 1.9 electrons.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122372831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Self-aligned mesa HBT with selective epitaxial regrown emitter and no base etch 具有选择性外延再生发射极和无基底腐蚀的自对准台面HBT
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307314
P. Enquist, D. Slater, J. Hutchby, A. Morris, R. Trew
{"title":"Self-aligned mesa HBT with selective epitaxial regrown emitter and no base etch","authors":"P. Enquist, D. Slater, J. Hutchby, A. Morris, R. Trew","doi":"10.1109/IEDM.1992.307314","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307314","url":null,"abstract":"A novel HBT mesa fabrication process is described which utilizes selective OMVPE regrowth of the emitter to simultaneously provide self-aligned base contacts and eliminate the problematical base etch. Additional advantages of this process include the ability to simultaneously achieve a thick extrinsic base for reduced base resistance and thin intrinsic base for reduced base transit time and the ability to simultaneously metallize emitter and base.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132860062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analysis of uniform degradation in n-MOSFETS n- mosfet均匀退化分析
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307462
L. Selmi, C. Fiegna, E. Sangiorgi, R. Bez, B. Riccò
{"title":"Analysis of uniform degradation in n-MOSFETS","authors":"L. Selmi, C. Fiegna, E. Sangiorgi, R. Bez, B. Riccò","doi":"10.1109/IEDM.1992.307462","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307462","url":null,"abstract":"A reliable numerical model to compute the energy distribution of hot electrons in one dimensional MOS structures is used to investigate the role of carrier energy on the degradation induced by optically generated substrate hot electrons. Comparison with preliminary experimental results suggests that the degradation is mainly due to carriers with energy below the Si-SiO/sub 2/ energy barrier.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128795727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信