利用叔丁基膦(TBP) MOCVD生长高性能异质结InGaAs/InP JFET

1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1992.307367

M. Hashemi, J. Shealy, S. Denbaars, U. Mishra

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引用次数: 1

摘要

提出并制备了一种以p/sup +/ GaInAs为栅极材料的新型InP-JFET(异质结JFET或HJFET)。与同结InP- jfet相比，在in /sub .53/Ga/sub .47/As/InP界面中较大的价带不连续(δ E/sub V/约=0.37 eV)大大抑制了该HJFET通道中的空穴注入，从而在没有g/sub m/压缩的情况下允许更高的正栅极偏置。栅极长度为0.6 μ m的异质结jfet (hjfet)的单位电流增益截止频率(f/sub T/)和功率增益截止频率(f/sub max/)分别为14.3 GHz和37.5 GHz。采用自对准结构，分别获得了高达230 mS/mm和21 GHz的a /sub /m /和f/sub / T/。在4 GHz时，获得的最大功率密度为1.0 W/mm，功率增加效率为40%。这些结果表明，HJFET是基于JFET技术的高速逻辑电路的首选器件。

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High performance heterojunction InGaAs/InP JFET grown by MOCVD using tertiarybutylphosphine (TBP)

A new InP-JFET (Heterojunction JFET or HJFET) having p/sup +/ GaInAs as the gate material is proposed and fabricated. The large valence band discontinuity in In/sub .53/Ga/sub .47/As/InP interface ( Delta E/sub V/ approximately=0.37 eV) considerably suppresses hole injection into the channel in this HJFET as compared to homojunction InP-JFETs, allowing higher positive gate bias without g/sub m/ compression. Heterojunction JFETs (HJFETs) with gate length of 0.6 mu m have resulted in a unity current gain cut-off frequency (f/sub T/) and power gain cut-off frequency (f/sub max/) of 14.3 GHz and 37.5 GHz, respectively. Using a self-aligned structure a g/sub m/ and f/sub T/ as high as 230 mS/mm and 21 GHz were obtained, respectively. At 4 GHz, a maximum power density of 1.0 W/mm with power added efficiency of 40% was obtained. These results indicate that the HJFET is a preferred device for high speed logic circuits based on JFET technology.<>

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来源期刊

1992 International Technical Digest on Electron Devices Meeting

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