S. K. Jones, A. Gérodolle, C. Lombardi, M. Schafer, C. Hill
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Complete simulation of advanced double layer polysilicon bipolar technology is presented using 2D process, equipment and device modelling in the STORM simulation environment. Polysilicon emitter size scaling and the perimeter depletion effect are studied. Process simulation results for non-planar polysilicon topographies are presented and the consequences of these on the device characteristics are explored.<>
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