P. Enquist, D. Slater, J. Hutchby, A. Morris, R. Trew
{"title":"Self-aligned mesa HBT with selective epitaxial regrown emitter and no base etch","authors":"P. Enquist, D. Slater, J. Hutchby, A. Morris, R. Trew","doi":"10.1109/IEDM.1992.307314","DOIUrl":null,"url":null,"abstract":"A novel HBT mesa fabrication process is described which utilizes selective OMVPE regrowth of the emitter to simultaneously provide self-aligned base contacts and eliminate the problematical base etch. Additional advantages of this process include the ability to simultaneously achieve a thick extrinsic base for reduced base resistance and thin intrinsic base for reduced base transit time and the ability to simultaneously metallize emitter and base.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307314","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A novel HBT mesa fabrication process is described which utilizes selective OMVPE regrowth of the emitter to simultaneously provide self-aligned base contacts and eliminate the problematical base etch. Additional advantages of this process include the ability to simultaneously achieve a thick extrinsic base for reduced base resistance and thin intrinsic base for reduced base transit time and the ability to simultaneously metallize emitter and base.<>