Complete bipolar simulation using STORM

1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1992.307509

S. K. Jones, A. Gérodolle, C. Lombardi, M. Schafer, C. Hill

引用次数: 3

Abstract

Complete simulation of advanced double layer polysilicon bipolar technology is presented using 2D process, equipment and device modelling in the STORM simulation environment. Polysilicon emitter size scaling and the perimeter depletion effect are studied. Process simulation results for non-planar polysilicon topographies are presented and the consequences of these on the device characteristics are explored.<>

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使用STORM完成双极模拟

在STORM仿真环境下，利用二维工艺、设备和器件建模，对先进的双层多晶硅双极技术进行了完整的仿真。研究了多晶硅发射极尺寸缩放和周长损耗效应。介绍了非平面多晶硅形貌的工艺模拟结果，并探讨了这些对器件特性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1992 International Technical Digest on Electron Devices Meeting

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