高氧氮化隧道氧化膜的高性能鳞片型eeprom

1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1992.307402

H. Fukuda, A. Uchiyama, T. Kuramochi, T. Hayashi, T. Iwabuchi, T. Ono, T. Takayashiki

{"title":"高氧氮化隧道氧化膜的高性能鳞片型eeprom","authors":"H. Fukuda, A. Uchiyama, T. Kuramochi, T. Hayashi, T. Iwabuchi, T. Ono, T. Takayashiki","doi":"10.1109/IEDM.1992.307402","DOIUrl":null,"url":null,"abstract":"We have proposed a heavy oxynitridation (RTONO) technology of the tunnel oxide, and successfully applied it to the scaled flash-type EEPROMs. Excellent program and erase (P/E) endurance properties were obtained with much small window closure (less than 6%). In addition, good P/E speeds are also obtained. The SIMS results show that a large number of N atoms (>10/sup 20/ atoms/cm/sup 3/) are incorporated into SiO/sub 2/, while the number of H atoms is decreased. Accordingly, almost no increase of trapped charge by the P/E stress is induced. Thus, this technology is the key to providing flash-EEPROM in the submicron regime.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"High-performance scaled flash-type EEPROMs with heavily oxynitrided tunnel oxide films\",\"authors\":\"H. Fukuda, A. Uchiyama, T. Kuramochi, T. Hayashi, T. Iwabuchi, T. Ono, T. Takayashiki\",\"doi\":\"10.1109/IEDM.1992.307402\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have proposed a heavy oxynitridation (RTONO) technology of the tunnel oxide, and successfully applied it to the scaled flash-type EEPROMs. Excellent program and erase (P/E) endurance properties were obtained with much small window closure (less than 6%). In addition, good P/E speeds are also obtained. The SIMS results show that a large number of N atoms (>10/sup 20/ atoms/cm/sup 3/) are incorporated into SiO/sub 2/, while the number of H atoms is decreased. Accordingly, almost no increase of trapped charge by the P/E stress is induced. Thus, this technology is the key to providing flash-EEPROM in the submicron regime.<<ETX>>\",\"PeriodicalId\":287098,\"journal\":{\"name\":\"1992 International Technical Digest on Electron Devices Meeting\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 International Technical Digest on Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1992.307402\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307402","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 14

摘要

提出了隧道氧化物重氧化氮化(RTONO)技术，并成功应用于规模化闪存型eeprom。在很小的窗口关闭(小于6%)的情况下，获得了出色的程序和擦除(P/E)耐久性。此外，还获得了良好的市盈率。SIMS结果表明，SiO/ sub2 /中加入了大量的N原子(>10/sup 20/ atoms/cm/sup 3/)，而H原子的数量减少。因此，P/E应力几乎没有引起捕获电荷的增加。因此，该技术是提供亚微米级闪存eeprom的关键。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High-performance scaled flash-type EEPROMs with heavily oxynitrided tunnel oxide films

We have proposed a heavy oxynitridation (RTONO) technology of the tunnel oxide, and successfully applied it to the scaled flash-type EEPROMs. Excellent program and erase (P/E) endurance properties were obtained with much small window closure (less than 6%). In addition, good P/E speeds are also obtained. The SIMS results show that a large number of N atoms (>10/sup 20/ atoms/cm/sup 3/) are incorporated into SiO/sub 2/, while the number of H atoms is decreased. Accordingly, almost no increase of trapped charge by the P/E stress is induced. Thus, this technology is the key to providing flash-EEPROM in the submicron regime.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1992 International Technical Digest on Electron Devices Meeting

自引率

0.00%

发文量