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2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)最新文献

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The Hilbert Generator, a Filter-Free Upconverter for 6G Communications 希尔伯特发生器，用于6G通信的无滤波器上变频器
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226178
Y. Deval, H. Lapuyade, F. Rivet
{"title":"The Hilbert Generator, a Filter-Free Upconverter for 6G Communications","authors":"Y. Deval, H. Lapuyade, F. Rivet","doi":"10.1109/RFIT49453.2020.9226178","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226178","url":null,"abstract":"This paper presents a new type of architecture for the conversion of wide frequency bands to high frequencies beyond 100GHz in order to overcome technological obstacles for 6G. It is proposed to consider the Hilbert transform as a mathematical tool for the design of a system natively rejecting the image frequencies in order to save on blocks like filters and mixers. It is shown that an appropriate conversion makes it possible to reject images of the order of several tens of dB, in simulation with CW, modulated (64-QAM) and multi-carrier signals. An experiment is carried out, at low frequencies, to demonstrate the concept.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"148 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121304153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Digital Coherent Optical Access Technologies for Beyond 5G Network 超5G网络的数字相干光接入技术
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226206
K. Kasai, M. Nakazawa, Masato Yoshida, K. Iwatsuki, T. Hirooka
{"title":"Digital Coherent Optical Access Technologies for Beyond 5G Network","authors":"K. Kasai, M. Nakazawa, Masato Yoshida, K. Iwatsuki, T. Hirooka","doi":"10.1109/RFIT49453.2020.9226206","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226206","url":null,"abstract":"Recent advances in high-capacity mobile fronthaul (MFH) using digital coherent optical transmission are described. A 160 Gbit/s-256 QAM bidirectional optical transmission over 26 km is demonstrated. We also describe a novel optical-wireless integrated modulation and coding scheme (MCS) control technique for realizing of low-latency, high-capacity RAN.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"195 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122520969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
40 Gbps 180 nm CMOS Modulator Driver Using Loss Compensation Gain Cells 采用损耗补偿增益单元的40gbps 180nm CMOS调制器驱动
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226250
K. Kawahara, Y. Umeda, K. Takano
{"title":"40 Gbps 180 nm CMOS Modulator Driver Using Loss Compensation Gain Cells","authors":"K. Kawahara, Y. Umeda, K. Takano","doi":"10.1109/RFIT49453.2020.9226250","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226250","url":null,"abstract":"Loss compensation gain cells using series-shunt peaking technique and stacked-FETs were incorporated into a modulator driver based on distributed topology to improve the bandwidth. The driver was developed in 180 nm CMOS technology. It can integrate with digital circuits on a chip. Hence the cost of optical transmitters will be considerably reduced. The driver was evaluated with electromagnetic analysis and circuit simulation, which reached an operating data rate of 40 Gbps and a peak to peak output swing of 1.8 V. It is the highest data rate compared with other works in similar CMOS technology.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115502641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microwave and Millimeter Wave Sensors for Industrial, Scientific and Medical Applications in BiCMOS Technology 微波和毫米波传感器工业，科学和医学应用的BiCMOS技术
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226229
J. Wessel, K. Schmalz, R. Yadav, Pouva Soltani Zarrin, F. I. Jamal, Defu Wang, G. Fischer
{"title":"Microwave and Millimeter Wave Sensors for Industrial, Scientific and Medical Applications in BiCMOS Technology","authors":"J. Wessel, K. Schmalz, R. Yadav, Pouva Soltani Zarrin, F. I. Jamal, Defu Wang, G. Fischer","doi":"10.1109/RFIT49453.2020.9226229","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226229","url":null,"abstract":"This work gives an overview of integrated microwave to millimeter wave sensors and their applications covering frequencies from 28 GHz to 240 GHz. The designs are capable to address versatile application fields from liquid compound measurements to plaque detection and classification in arteries, glucose detection in continuous glucose monitoring (CGS) systems and virus detection in the context of respiratory diseases. The demonstrated approaches represent powerful and miniaturized solutions for highly sensitive contactless sensing of sample properties. Exploiting millimeter wave frequencies enables highest levels of integration to implement miniaturized sensing solutions including on-chip readout systems.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131555864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental Study of Leaky-wave Antenna Employing Bent Dielectric Waveguide for Millimeter Wave Communication 弯曲介质波导毫米波通信漏波天线的实验研究
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226244
A. Fukuda, K. Kawai, H. Okazaki, Yasunori Suzuki
{"title":"Experimental Study of Leaky-wave Antenna Employing Bent Dielectric Waveguide for Millimeter Wave Communication","authors":"A. Fukuda, K. Kawai, H. Okazaki, Yasunori Suzuki","doi":"10.1109/RFIT49453.2020.9226244","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226244","url":null,"abstract":"This paper presents experimental results of a leaky-wave antenna employing a bent dielectric waveguide for millimeter wave bands. We utilize the characteristics that the dielectric waveguide radiates electromagnetic waves by inflection, and that the inflected part of the waveguide acts as an antenna. The radiated propagation characteristics from the bent dielectric waveguide are experimentally confirmed. Since the inflected part can be formed anywhere along the length of the waveguide, it is possible to expand communication areas around the waveguide.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131720178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design Theory of a Parallel-Plate Coupler for Underwater Wireless Power Transfer 水下无线传输并联板耦合器的设计理论
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226220
Masaya Tamura, Kousuke Murai, Yasumasa Naka
{"title":"Design Theory of a Parallel-Plate Coupler for Underwater Wireless Power Transfer","authors":"Masaya Tamura, Kousuke Murai, Yasumasa Naka","doi":"10.1109/RFIT49453.2020.9226220","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226220","url":null,"abstract":"The design theory of a coupler with two pairs of parallel plates for underwater wireless power transfer is summarized in this paper. The accurate prediction of the power transfer efficiency by separating the $kQ$ product into the coupling coefficient $k$ and Q-factor is a difficult task when transmitting power in a high-permittivity medium, such as water, or a high-conductivity medium such as seawater. Two cases are introduced; the pseudo-coupling coefficient $k$ for fresh water and the pseudo-$kQ$ product for seawater, respectively, are adopted.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126754158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dual-Band Concurrent Low Noise LNA 双频并发低噪声LNA
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226242
Y. Sawayama, T. Morishita, K. Komoku, N. Itoh
{"title":"Dual-Band Concurrent Low Noise LNA","authors":"Y. Sawayama, T. Morishita, K. Komoku, N. Itoh","doi":"10.1109/RFIT49453.2020.9226242","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226242","url":null,"abstract":"This paper presents 1.66/3.26 GHz dual-band concurrent LNA with low NF. Proposed LNA incorporates notch filter matching circuit and mutual induction matching circuit on input and output side to improve NF. The measured $S_{11},S_{22},S_{21}$ and NF were −7.11 dB, −8.41 dB, 12.5 dB, and 1.91 dB at 1.66 GHz and −7.52 dB, −16.0 dB, 9.02 dB and 3.25 dB at 3.26 GHz, respectively. IP1dB exhibits −10.3/−4.7 dBm at 1.66/3.26 GHz. The power consumption is 20.5 mW from a 1.8 V supply voltage. The proposed LNA is designed by using the TSMC-180 nm CMOS process.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114276623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Study of 24 GHz 3D-Striped Inductor VCO with Gradually Changed Metal Width of Inductor 逐渐改变电感金属宽度的24 GHz 3d条纹电感压控振荡器研究
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226227
Tsukasa Yuki, T. Morishita, K. Komoku, N. Itoh
{"title":"A Study of 24 GHz 3D-Striped Inductor VCO with Gradually Changed Metal Width of Inductor","authors":"Tsukasa Yuki, T. Morishita, K. Komoku, N. Itoh","doi":"10.1109/RFIT49453.2020.9226227","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226227","url":null,"abstract":"The phase noise characteristics of the 24-GHz 3D-striped inductor VCO with gradually changed metal width of inductor has been investigated. In the high frequency region such as beyond 20-GHz, the striped inductor VCO ensure to obtain lower phase noise compare than normal inductor VCO, and the optimum metal fixed width is existing. In this work, we focused on the striped inductor which metal width changed gradually from inner to outer to consider current crowding effect. In concretely, one is the inner metal finger is the widest and the outer metal finger is the narrowest, and the other is vice versa, the inner metal finger is the narrowest and the outer metal width is the widest. The measurement results of VCOs with the constant fixed finger width inductor, the outer-widest width, and the inner-widest width all exhibit approximately −103 dBc/Hz minimum phase noise at 1-MHz offset from 24 GHz oscillation frequency, but the current consumption at achieving the lowest phase noise are 10.9 mA, 11.6 mA, 9.2 mA, respectively. This result shows that the VCO which adopted the striped inductor with metal width change gradually from inner-wide to outer-narrow shows the lowest current consumption. The process technology in this work is TSMC-180 nm CMOS.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114385310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Research and Development of GaN-based HEMTs for Millimeter- and Terahertz-Wave Wireless Communications 基于gan的毫米波和太赫兹波无线通信hemt的研究与开发
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226221
I. Watanabe, Y. Yamashita, A. Kasamatsu
{"title":"Research and Development of GaN-based HEMTs for Millimeter- and Terahertz-Wave Wireless Communications","authors":"I. Watanabe, Y. Yamashita, A. Kasamatsu","doi":"10.1109/RFIT49453.2020.9226221","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226221","url":null,"abstract":"GaN-based transistors and amplifiers are the most promising electron devices not only for high-power and high-voltage applications but also for millimeter-and terahertz-wave wireless communications in 5th generation (5G) and next-generation mobile communications systems. In this paper, we fabricated nanoscale-gate GaN-based high electron mobility transistors (HEMTs) on sapphire, SiC and GaN substrates, and investigated the effect on InAlN barrier thickness on DC and RF performances to improve the current-gain cutoff frequency (f<inf>T</inf>) and maximum oscillation frequency (f<inf>max</inf>). As a result, we successfully obtained an f<inf>max</inf> of 287 GHz and an f<inf>T</inf> of 228 GHz at a thinner 3-nm-thick In<inf>0.18</inf>Al<inf>0.82</inf>N barrier for a 45-nm-gate In<inf>0</inf>.<inf>18</inf>Al<inf>0</inf>.<inf>82</inf>N/AlN/GaN MES-HEMT on GaN substrates.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115945971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Recent Development in 2D and 3D GaN devices for RF and Power Electronics Applications 用于射频和电力电子应用的二维和三维GaN器件的最新发展
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226187
K. Teo, N. Chowdhury, Yuhao Zhang, T. Palacios, K. Yamanaka, Y. Yamaguchi
{"title":"Recent Development in 2D and 3D GaN devices for RF and Power Electronics Applications","authors":"K. Teo, N. Chowdhury, Yuhao Zhang, T. Palacios, K. Yamanaka, Y. Yamaguchi","doi":"10.1109/RFIT49453.2020.9226187","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226187","url":null,"abstract":"Some recent developments in 2D and 3D GaN devices and their improved performance parameters such as efficiency, fT, linearity, power density and switching speed are briefly outlined. Most of the cases briefed are for applications in RF with one example for power electronics and another for GaN integrated circuit.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124373492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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