采用损耗补偿增益单元的40gbps 180nm CMOS调制器驱动

K. Kawahara, Y. Umeda, K. Takano
{"title":"采用损耗补偿增益单元的40gbps 180nm CMOS调制器驱动","authors":"K. Kawahara, Y. Umeda, K. Takano","doi":"10.1109/RFIT49453.2020.9226250","DOIUrl":null,"url":null,"abstract":"Loss compensation gain cells using series-shunt peaking technique and stacked-FETs were incorporated into a modulator driver based on distributed topology to improve the bandwidth. The driver was developed in 180 nm CMOS technology. It can integrate with digital circuits on a chip. Hence the cost of optical transmitters will be considerably reduced. The driver was evaluated with electromagnetic analysis and circuit simulation, which reached an operating data rate of 40 Gbps and a peak to peak output swing of 1.8 V. It is the highest data rate compared with other works in similar CMOS technology.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"40 Gbps 180 nm CMOS Modulator Driver Using Loss Compensation Gain Cells\",\"authors\":\"K. Kawahara, Y. Umeda, K. Takano\",\"doi\":\"10.1109/RFIT49453.2020.9226250\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Loss compensation gain cells using series-shunt peaking technique and stacked-FETs were incorporated into a modulator driver based on distributed topology to improve the bandwidth. The driver was developed in 180 nm CMOS technology. It can integrate with digital circuits on a chip. Hence the cost of optical transmitters will be considerably reduced. The driver was evaluated with electromagnetic analysis and circuit simulation, which reached an operating data rate of 40 Gbps and a peak to peak output swing of 1.8 V. It is the highest data rate compared with other works in similar CMOS technology.\",\"PeriodicalId\":283714,\"journal\":{\"name\":\"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT49453.2020.9226250\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT49453.2020.9226250","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

采用串联分流调峰技术和叠加场效应管的损耗补偿增益单元被集成到基于分布式拓扑的调制器驱动器中,以提高带宽。该驱动器采用180nm CMOS技术开发。它可以与芯片上的数字电路集成。因此,光学发射机的成本将大大降低。通过电磁分析和电路仿真对该驱动器进行了评估,其工作数据速率达到40 Gbps,峰值输出摆幅为1.8 V。它是同类CMOS技术中数据传输速率最高的器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
40 Gbps 180 nm CMOS Modulator Driver Using Loss Compensation Gain Cells
Loss compensation gain cells using series-shunt peaking technique and stacked-FETs were incorporated into a modulator driver based on distributed topology to improve the bandwidth. The driver was developed in 180 nm CMOS technology. It can integrate with digital circuits on a chip. Hence the cost of optical transmitters will be considerably reduced. The driver was evaluated with electromagnetic analysis and circuit simulation, which reached an operating data rate of 40 Gbps and a peak to peak output swing of 1.8 V. It is the highest data rate compared with other works in similar CMOS technology.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信