{"title":"采用损耗补偿增益单元的40gbps 180nm CMOS调制器驱动","authors":"K. Kawahara, Y. Umeda, K. Takano","doi":"10.1109/RFIT49453.2020.9226250","DOIUrl":null,"url":null,"abstract":"Loss compensation gain cells using series-shunt peaking technique and stacked-FETs were incorporated into a modulator driver based on distributed topology to improve the bandwidth. The driver was developed in 180 nm CMOS technology. It can integrate with digital circuits on a chip. Hence the cost of optical transmitters will be considerably reduced. The driver was evaluated with electromagnetic analysis and circuit simulation, which reached an operating data rate of 40 Gbps and a peak to peak output swing of 1.8 V. It is the highest data rate compared with other works in similar CMOS technology.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"40 Gbps 180 nm CMOS Modulator Driver Using Loss Compensation Gain Cells\",\"authors\":\"K. Kawahara, Y. Umeda, K. Takano\",\"doi\":\"10.1109/RFIT49453.2020.9226250\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Loss compensation gain cells using series-shunt peaking technique and stacked-FETs were incorporated into a modulator driver based on distributed topology to improve the bandwidth. The driver was developed in 180 nm CMOS technology. It can integrate with digital circuits on a chip. Hence the cost of optical transmitters will be considerably reduced. The driver was evaluated with electromagnetic analysis and circuit simulation, which reached an operating data rate of 40 Gbps and a peak to peak output swing of 1.8 V. It is the highest data rate compared with other works in similar CMOS technology.\",\"PeriodicalId\":283714,\"journal\":{\"name\":\"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT49453.2020.9226250\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT49453.2020.9226250","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
40 Gbps 180 nm CMOS Modulator Driver Using Loss Compensation Gain Cells
Loss compensation gain cells using series-shunt peaking technique and stacked-FETs were incorporated into a modulator driver based on distributed topology to improve the bandwidth. The driver was developed in 180 nm CMOS technology. It can integrate with digital circuits on a chip. Hence the cost of optical transmitters will be considerably reduced. The driver was evaluated with electromagnetic analysis and circuit simulation, which reached an operating data rate of 40 Gbps and a peak to peak output swing of 1.8 V. It is the highest data rate compared with other works in similar CMOS technology.