{"title":"Improvement Method of Power-Added Efficiency of Multi-Stage CMOS Amplifiers in Millimeter-Wave Band","authors":"Shun Ito, T. Yoshida, S. Amakawa, M. Fujishima","doi":"10.1109/RFIT49453.2020.9226226","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226226","url":null,"abstract":"A power amplifier in the millimeter-wave band usually consists of multiple stages because the gain per stage is small. It is necessary to optimally distribute gain compression over multiple stages to improve power-added efficiency (PAE) while maintaining linearity. This paper proposes a method of gain-compression allocation that maximizes the PAE of a multistage amplifier. In an 80-GHz power amplifier designed using a 55-nm CMOS process and lossless inter-stage networks, the PAE is improved by 2 % as compared to the case where gain compression is evenly distributed to each stage.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117248605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High Linearity and High Efficiency Stacked-FET Millimeter-Wave Power Amplifier ICs","authors":"T. Yoshimasu, Mengchu Fang, T. Sugiura","doi":"10.1109/RFIT49453.2020.9226212","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226212","url":null,"abstract":"Recently reported CMOS power amplifier ICs for microwave and millimeter-wave communication systems such as 5G are summarized and reviewed in this paper. Stacked-FETs are widely utilized to increase the output power and to conquer low breakdown voltage issues. In addition, adaptive bias and load circuits are fully described to improve the linearity and back-off efficiency of the power amplifier ICs in this paper.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125092753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"An Efficient Wide Tuning Range −0.4 dBm 65 GHz NMOS VCO on 22 nm FD-SOI CMOS","authors":"Z. Tibenszky, D. Fritsche, C. Carta, F. Ellinger","doi":"10.1109/RFIT49453.2020.9226238","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226238","url":null,"abstract":"This paper presents a voltage-controlled oscillator implemented on a 22-nm FD-SOI CMOS technology. Optimized for wide tuning range and high output power, the oscillator uses a transmission line and an MOS varactor in the resonator, achieving a tuning range of 56.0-73.3 GHz. Output powers up to −0.4 and −2.5 dBm have been measured, while drawing 12.8 mW and 20.0 mW power from supply voltages of 0.8 V and 1 V, respectively. The oscillator core and buffer require 6300μm2 of silicon area, which is almost entirely devoted to the resonator. The presented circuit exhibits a great combination of performance metrics, it has the highest output power, smallest area, second highest tuning range and efficiency among CMOS oscillators in similar frequency ranges reported to date.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116622139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ayumu Tsuchiya, Kensuke Nagano, T. Kawai, A. Enokihara
{"title":"Design of Dual-Band Four-Way LC-Ladder Dividers","authors":"Ayumu Tsuchiya, Kensuke Nagano, T. Kawai, A. Enokihara","doi":"10.1109/RFIT49453.2020.9226184","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226184","url":null,"abstract":"In this paper, a four-way lumped-element power divider with in-phase output using LC-ladder circuits is described. We propose a four-way LC-ladder divider composed of 2-section LC-ladder circuits between input and output ports, and their output ports are connected through external circuits composed of an LC-ladder circuit and a series LR circuit to obtain satisfactory isolations. By designing the divider based on even-/odd-mode analysis techniques and a complex conjugate impedance matching theorem, the proposed four-way LC-ladder divider can achieve dual-band operation. To confirm the validity of the design method, the divider is designed and fabricated at a center frequency of 300MHz. As results of simulation and experiment, broadband characteristics with a relative bandwidth of about 43% can be obtained. Furthermore, measurement results of the fabricated power divider indicate low reflection, high isolation and extremely flat power division, and good agreement with simulation results.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116482389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Masao Fujita, Masayuki Toyoda, S. Hara, I. Watanabe, A. Kasamatsu
{"title":"Design of Electromagnetic Wave Absorption Sheet with Transparency and Flexibility in sub-THz Bands","authors":"Masao Fujita, Masayuki Toyoda, S. Hara, I. Watanabe, A. Kasamatsu","doi":"10.1109/RFIT49453.2020.9226177","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226177","url":null,"abstract":"This paper reports on improvements achieved in the development of an electromagnetic wave absorption sheet. Drastic improvements have been made to the flexibility, light transmittance and absorption of electromagnetic waves in millimeter-wave and sub-THz bands. The design parameter of the EM-wave absorption sheet has been adjusted to a set reflection decrement of −20 dB aim with the target frequency of 250 GHz by a two-dimensional simulation based on the reflective theory of EM-wave. Samples of this improved EM-wave absorption sheet have now been successfully manufactured. The transparency level of the EM-wave absorption sheet sample is 62.3%. After flexibility testing, microphotographs show no cracks in the surface of the resistive layer where the EM-wave absorption sheet sample was bent by diameter 0.5 mm. The EM-wave absorption performance results of both the 2D simulation and actual product sample were very similar.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114830061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Dual-Band Coordinate Transformation by Anisotropic Media with Negative and Positive Eigenvalues","authors":"Y. Takano, A. Sanada","doi":"10.1109/RFIT49453.2020.9226199","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226199","url":null,"abstract":"In this paper, dual-band coordinate transformation anisotropic media with negative and positive eigenvalues are proposed. The proposed media are derived from the 2-D anisotropic metamaterials with off-diagonal components by introducing duality with series capacitances and shunt inductances having series and shunt $LC$ resonators, respectively. It is demonstrated that the proposed media yield two different coordinate transformations with positive and negative eigenvalues at two different frequency ranges. Dual-band wave propagation is numerically demonstrated based on circuit simulations using SPICE simulator.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128116020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Development and Application of Terahertz Optical Sampling Systems for the Semiconductor Industry","authors":"Eiji Kato, Y. Shang, M. Hashimoto","doi":"10.1109/RFIT49453.2020.9226197","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226197","url":null,"abstract":"This paper presents a terahertz (THz) optical sampling technique and discusses some industrial applications in semiconductor manufacturing and failure analysis. The use of ultrashort pulse fiber lasers and specific electro-optical or opto-electrical conversion devices such as photoconductive switches enable time-domain analysis of sub-picosecond pulses, paving the way to new industrial applications.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"49 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132089866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hidenori Ishibashi, Y. Tarui, Y. Onodera, Toru Takahashi, N. Yoneda, M. Miyazaki
{"title":"Termination with Stubs in Resistive Film","authors":"Hidenori Ishibashi, Y. Tarui, Y. Onodera, Toru Takahashi, N. Yoneda, M. Miyazaki","doi":"10.1109/RFIT49453.2020.9226207","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226207","url":null,"abstract":"In recent years, T/R modules have required surface mount terminations with high-power capability for cost reduction. Terminations with large resistive film on aluminum nitride have been proposed as a method for high power use. However, they have a problem that it is difficult to obtain the broadband terminations. Therefore, we propose a novel termination with stubs in resistive film. This termination can disperse heat by resonating an input signal with open stubs. Hence, the proposed termination improved surface loss density by 50% compared to the conventional one. In addition, we show that the fabricated termination has the reflection coefficient characteristics smaller than −20B in the bandwidth of 43.3%.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114477550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Novel Dual-Band Wireless Communication System for Medical usage","authors":"M. Motoyoshi, S. Kameda, N. Suematsu","doi":"10.1109/RFIT49453.2020.9226202","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226202","url":null,"abstract":"We are considering a medication management system by putting ultra-small wireless communication chip on tablet. For this system, components for the chip are introduced. To achieve the chip on tablet, a microwave/millimeter-wave dual-band antenna is employed for antenna size reduction. Moreover, a wireless power transfer between a large transmitting coil to an ultra-small receiving coil and ultra-low power millimeter wave transmitter are used to reduce the large battery. These technology brings really digital medicine.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117175505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Go Urakawa, Hiroyuki Kobayashi, J. Deguchi, R. Fujimoto
{"title":"A Noise-Canceling Charge Pump for Area Efficient PLL Design","authors":"Go Urakawa, Hiroyuki Kobayashi, J. Deguchi, R. Fujimoto","doi":"10.1109/RFIT49453.2020.9226191","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226191","url":null,"abstract":"Phase noise of PLLs is one of the critical issues in high-performance transceivers. Especially, in-band noise is troublesome because the phase noise inside a loop bandwidth is hard to be filtered out due to low-pass characteristic of most PLL components. The in-band noise of PLLs is mainly caused by charge-pumps (CPs), so that large-size transistors are used to improve in-band noise of CPs. Due to this trade-off between inband noise and occupied area, a large area is needed for CPs in high-performance transceivers. In this paper, we propose a noise-canceling CP to improve in-band noise. The prototype of the proposed CP embedded in a 28-GHz LC-PLL was fabricated using 16nm FinFET process and 1.2-dB improvement of single sideband (SSB) integrated phase noise is achieved. As the results of in-band noise improvement, occupied area for the CP can be reduced to 22%.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"173 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117346122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}