K. Teo, N. Chowdhury, Yuhao Zhang, T. Palacios, K. Yamanaka, Y. Yamaguchi
{"title":"用于射频和电力电子应用的二维和三维GaN器件的最新发展","authors":"K. Teo, N. Chowdhury, Yuhao Zhang, T. Palacios, K. Yamanaka, Y. Yamaguchi","doi":"10.1109/RFIT49453.2020.9226187","DOIUrl":null,"url":null,"abstract":"Some recent developments in 2D and 3D GaN devices and their improved performance parameters such as efficiency, fT, linearity, power density and switching speed are briefly outlined. Most of the cases briefed are for applications in RF with one example for power electronics and another for GaN integrated circuit.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Recent Development in 2D and 3D GaN devices for RF and Power Electronics Applications\",\"authors\":\"K. Teo, N. Chowdhury, Yuhao Zhang, T. Palacios, K. Yamanaka, Y. Yamaguchi\",\"doi\":\"10.1109/RFIT49453.2020.9226187\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Some recent developments in 2D and 3D GaN devices and their improved performance parameters such as efficiency, fT, linearity, power density and switching speed are briefly outlined. Most of the cases briefed are for applications in RF with one example for power electronics and another for GaN integrated circuit.\",\"PeriodicalId\":283714,\"journal\":{\"name\":\"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT49453.2020.9226187\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT49453.2020.9226187","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Recent Development in 2D and 3D GaN devices for RF and Power Electronics Applications
Some recent developments in 2D and 3D GaN devices and their improved performance parameters such as efficiency, fT, linearity, power density and switching speed are briefly outlined. Most of the cases briefed are for applications in RF with one example for power electronics and another for GaN integrated circuit.