用于射频和电力电子应用的二维和三维GaN器件的最新发展

2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI:10.1109/RFIT49453.2020.9226187

K. Teo, N. Chowdhury, Yuhao Zhang, T. Palacios, K. Yamanaka, Y. Yamaguchi

{"title":"用于射频和电力电子应用的二维和三维GaN器件的最新发展","authors":"K. Teo, N. Chowdhury, Yuhao Zhang, T. Palacios, K. Yamanaka, Y. Yamaguchi","doi":"10.1109/RFIT49453.2020.9226187","DOIUrl":null,"url":null,"abstract":"Some recent developments in 2D and 3D GaN devices and their improved performance parameters such as efficiency, fT, linearity, power density and switching speed are briefly outlined. Most of the cases briefed are for applications in RF with one example for power electronics and another for GaN integrated circuit.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Recent Development in 2D and 3D GaN devices for RF and Power Electronics Applications\",\"authors\":\"K. Teo, N. Chowdhury, Yuhao Zhang, T. Palacios, K. Yamanaka, Y. Yamaguchi\",\"doi\":\"10.1109/RFIT49453.2020.9226187\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Some recent developments in 2D and 3D GaN devices and their improved performance parameters such as efficiency, fT, linearity, power density and switching speed are briefly outlined. Most of the cases briefed are for applications in RF with one example for power electronics and another for GaN integrated circuit.\",\"PeriodicalId\":283714,\"journal\":{\"name\":\"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT49453.2020.9226187\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT49453.2020.9226187","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

简要概述了二维和三维GaN器件的最新发展及其改进的性能参数，如效率，fT，线性度，功率密度和开关速度。介绍的大多数案例都是射频应用，一个例子是电力电子，另一个例子是氮化镓集成电路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Recent Development in 2D and 3D GaN devices for RF and Power Electronics Applications

Some recent developments in 2D and 3D GaN devices and their improved performance parameters such as efficiency, fT, linearity, power density and switching speed are briefly outlined. Most of the cases briefed are for applications in RF with one example for power electronics and another for GaN integrated circuit.

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2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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