Dual-Band Concurrent Low Noise LNA

Abstract

This paper presents 1.66/3.26 GHz dual-band concurrent LNA with low NF. Proposed LNA incorporates notch filter matching circuit and mutual induction matching circuit on input and output side to improve NF. The measured $S_{11},S_{22},S_{21}$ and NF were −7.11 dB, −8.41 dB, 12.5 dB, and 1.91 dB at 1.66 GHz and −7.52 dB, −16.0 dB, 9.02 dB and 3.25 dB at 3.26 GHz, respectively. IP1dB exhibits −10.3/−4.7 dBm at 1.66/3.26 GHz. The power consumption is 20.5 mW from a 1.8 V supply voltage. The proposed LNA is designed by using the TSMC-180 nm CMOS process.