{"title":"基于gan的毫米波和太赫兹波无线通信hemt的研究与开发","authors":"I. Watanabe, Y. Yamashita, A. Kasamatsu","doi":"10.1109/RFIT49453.2020.9226221","DOIUrl":null,"url":null,"abstract":"GaN-based transistors and amplifiers are the most promising electron devices not only for high-power and high-voltage applications but also for millimeter-and terahertz-wave wireless communications in 5th generation (5G) and next-generation mobile communications systems. In this paper, we fabricated nanoscale-gate GaN-based high electron mobility transistors (HEMTs) on sapphire, SiC and GaN substrates, and investigated the effect on InAlN barrier thickness on DC and RF performances to improve the current-gain cutoff frequency (f<inf>T</inf>) and maximum oscillation frequency (f<inf>max</inf>). As a result, we successfully obtained an f<inf>max</inf> of 287 GHz and an f<inf>T</inf> of 228 GHz at a thinner 3-nm-thick In<inf>0.18</inf>Al<inf>0.82</inf>N barrier for a 45-nm-gate In<inf>0</inf>.<inf>18</inf>Al<inf>0</inf>.<inf>82</inf>N/AlN/GaN MES-HEMT on GaN substrates.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Research and Development of GaN-based HEMTs for Millimeter- and Terahertz-Wave Wireless Communications\",\"authors\":\"I. Watanabe, Y. Yamashita, A. Kasamatsu\",\"doi\":\"10.1109/RFIT49453.2020.9226221\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaN-based transistors and amplifiers are the most promising electron devices not only for high-power and high-voltage applications but also for millimeter-and terahertz-wave wireless communications in 5th generation (5G) and next-generation mobile communications systems. In this paper, we fabricated nanoscale-gate GaN-based high electron mobility transistors (HEMTs) on sapphire, SiC and GaN substrates, and investigated the effect on InAlN barrier thickness on DC and RF performances to improve the current-gain cutoff frequency (f<inf>T</inf>) and maximum oscillation frequency (f<inf>max</inf>). As a result, we successfully obtained an f<inf>max</inf> of 287 GHz and an f<inf>T</inf> of 228 GHz at a thinner 3-nm-thick In<inf>0.18</inf>Al<inf>0.82</inf>N barrier for a 45-nm-gate In<inf>0</inf>.<inf>18</inf>Al<inf>0</inf>.<inf>82</inf>N/AlN/GaN MES-HEMT on GaN substrates.\",\"PeriodicalId\":283714,\"journal\":{\"name\":\"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT49453.2020.9226221\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT49453.2020.9226221","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Research and Development of GaN-based HEMTs for Millimeter- and Terahertz-Wave Wireless Communications
GaN-based transistors and amplifiers are the most promising electron devices not only for high-power and high-voltage applications but also for millimeter-and terahertz-wave wireless communications in 5th generation (5G) and next-generation mobile communications systems. In this paper, we fabricated nanoscale-gate GaN-based high electron mobility transistors (HEMTs) on sapphire, SiC and GaN substrates, and investigated the effect on InAlN barrier thickness on DC and RF performances to improve the current-gain cutoff frequency (fT) and maximum oscillation frequency (fmax). As a result, we successfully obtained an fmax of 287 GHz and an fT of 228 GHz at a thinner 3-nm-thick In0.18Al0.82N barrier for a 45-nm-gate In0.18Al0.82N/AlN/GaN MES-HEMT on GaN substrates.