基于gan的毫米波和太赫兹波无线通信hemt的研究与开发

I. Watanabe, Y. Yamashita, A. Kasamatsu
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引用次数: 9

摘要

基于gan的晶体管和放大器不仅是高功率和高压应用,而且是第5代(5G)和下一代移动通信系统中的毫米波和太赫兹波无线通信中最有前途的电子器件。本文在蓝宝石、SiC和GaN衬底上制备了基于纳米栅极氮化镓的高电子迁移率晶体管(hemt),并研究了氮化镓阻挡层厚度对直流和射频性能的影响,以提高电流增益截止频率(fT)和最大振荡频率(fmax)。因此,我们成功地在更薄的3 nm厚In0.18Al0.82N势垒处获得了287 GHz的fmax和228 GHz的fT,用于GaN衬底上的45 nm栅In0.18Al0.82N/AlN/GaN meshemt。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Research and Development of GaN-based HEMTs for Millimeter- and Terahertz-Wave Wireless Communications
GaN-based transistors and amplifiers are the most promising electron devices not only for high-power and high-voltage applications but also for millimeter-and terahertz-wave wireless communications in 5th generation (5G) and next-generation mobile communications systems. In this paper, we fabricated nanoscale-gate GaN-based high electron mobility transistors (HEMTs) on sapphire, SiC and GaN substrates, and investigated the effect on InAlN barrier thickness on DC and RF performances to improve the current-gain cutoff frequency (fT) and maximum oscillation frequency (fmax). As a result, we successfully obtained an fmax of 287 GHz and an fT of 228 GHz at a thinner 3-nm-thick In0.18Al0.82N barrier for a 45-nm-gate In0.18Al0.82N/AlN/GaN MES-HEMT on GaN substrates.
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