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2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)最新文献

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Design Method for Negative Refractive Index Metamaterials by Using a Distributed Transmission-Line Model 基于分布式传输在线模型的负折射率超材料设计方法
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/rfit49453.2020.9226180
T. Nagayama, S. Fukushima, Toshio Watanabe
{"title":"Design Method for Negative Refractive Index Metamaterials by Using a Distributed Transmission-Line Model","authors":"T. Nagayama, S. Fukushima, Toshio Watanabe","doi":"10.1109/rfit49453.2020.9226180","DOIUrl":"https://doi.org/10.1109/rfit49453.2020.9226180","url":null,"abstract":"A design method for negative refractive index (NRI) metamaterials is proposed based on the transmission-line (TL) approach. A distributed TL model is introduced to the design and the design formulas are shown. A NRI lens operating at 3.85 GHz is designed with the model as an example. The operation and the validity of the design method are exhibited from the calculated results by circuit simulations with a SPICE simulator.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123027206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
CMOS Platform for Terahertz 太赫兹CMOS平台
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226198
K. O. Kenneth
{"title":"CMOS Platform for Terahertz","authors":"K. O. Kenneth","doi":"10.1109/RFIT49453.2020.9226198","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226198","url":null,"abstract":"The Complementary Metal Oxide Semiconductor (CMOS) integrated circuits technology has emerged as a means for realization of capable and affordable systems that operate at 300 GHz and higher. This is bridging the Terahertz Gap and enabling everyday life applications utilizing this portion of the spectrum. Signal generation up to 1.3 THz, coherent detection up to 1.2 THz, and incoherent detection up to ~10 THz have been demonstrated using CMOS. Furthermore, a highly integrated rotational spectroscopy transceiver for electronic smelling operating up to near 300 GHz, a 30-Gbps 300-GHz QPSK transmitter for data communication with an output power of −6 dBm and an imaging array operating at 820 GHz have been demonstrated in CMOS. These along with the data in the literature suggest that the necessary terahertz electronics for everyday life applications can be affordably manufactured.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129020781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Design of Microwave Applicator with Plural Microchannels Using Post-Wall Waveguide 基于后壁波导的多微通道微波应用器设计
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226210
M. Kishihara, M. Isobe, K. Okubo, M. Takeuchi, A. Yamaguchi, Y. Utsumi
{"title":"Design of Microwave Applicator with Plural Microchannels Using Post-Wall Waveguide","authors":"M. Kishihara, M. Isobe, K. Okubo, M. Takeuchi, A. Yamaguchi, Y. Utsumi","doi":"10.1109/RFIT49453.2020.9226210","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226210","url":null,"abstract":"Microwave application technologies such as microwave heating, microwave assisted chemistry, etc. are of the innovative green technologies. In this paper, a chip-size microwave applicator with plural microchannels is designed at 24 GHz band. It consists of the post-wall waveguide and two or more micro channels arranged among the metallic posts. This applicator realizes microwave heating at different temperatures for the microchannels embedded in the separate places. The temperature-time profiles of the applicator are examined numerically. An experimental verification is performed with microwave power sources of about 0.7 W.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114138443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on Effects of GaN Trap Depth Profiles to Transient Response in GaN HEMTs on GaN Substrates by Device Simulation GaN阱深度对GaN衬底上GaN hemt瞬态响应影响的器件模拟研究
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226201
Kaito Ito, T. Oishi
{"title":"Study on Effects of GaN Trap Depth Profiles to Transient Response in GaN HEMTs on GaN Substrates by Device Simulation","authors":"Kaito Ito, T. Oishi","doi":"10.1109/RFIT49453.2020.9226201","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226201","url":null,"abstract":"Effects of GaN trap depth profile to transient response for GaN HEMTs on GaN substrates were investigated by device simulation. The device structures for the simulation have semi-insulating 400-μm-thick GaN substrate with trap density of 5.0 ⨯ 1017 cm−3and energy level of 0.5 eV. The transient responses were calculated as the drain current depending on time by changing bias from off-state to on-state condition. The derivative of drain current respect to time has a peak at 8 msec corresponded to the characteristics time of the trap. The traps under the gate edge of the drain side in deep GaN channel region were found to affect the transient response. In the case of the structure with additional trap layer in the channel region, the additional trap dominated the transient response at the trap density as large as 5.0 ⨯ 1017 cm−3. When the buffer layer removed, the thickness reduction of the channel layer resulted to the degradation of the transient response.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122233607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
4-port 10 MHz − 67 GHz Broadband Measurement of FR-4 PCB Transmission Lines for 64-Gb/s PAM-4 Signaling 用于64gb /s PAM-4信令的FR-4 PCB传输线宽带测量
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226185
Y. Tsubouchi, J. Deguchi, R. Fujimoto
{"title":"4-port 10 MHz − 67 GHz Broadband Measurement of FR-4 PCB Transmission Lines for 64-Gb/s PAM-4 Signaling","authors":"Y. Tsubouchi, J. Deguchi, R. Fujimoto","doi":"10.1109/RFIT49453.2020.9226185","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226185","url":null,"abstract":"In this paper, measured high-frequency responses of differential transmission lines on FR-4 based printed circuit boards (PCBs) and their analyzed results are shown. In high-bandwidth and high-frequency communication systems, characterizing the components on PCBs becomes more and more important. Assuming transmission lines for 64-Gb/s PAM-4 signaling, the measurements are carried out up to 67 GHz using 150-μm pitch GSGSG differential probes. A via-stub effect, line-direction/location dependence on electrical characteristics of transmission lines, and relation between line dimensions and higher order mode that limits line bandwidth are analyzed based on measured results.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115079780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Diskwide Spiral Trajectory Impedance Matching Network for Frequency-Diversity Power Transfer 频率分集功率传输的全磁盘螺旋轨迹阻抗匹配网络
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226190
Asako Suzuki, Satoshi Tsukamoto, T. Ohira
{"title":"Diskwide Spiral Trajectory Impedance Matching Network for Frequency-Diversity Power Transfer","authors":"Asako Suzuki, Satoshi Tsukamoto, T. Ohira","doi":"10.1109/RFIT49453.2020.9226190","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226190","url":null,"abstract":"This paper proposes a passive network that exhibits a spiral impedance trajectory as its frequency response. A loose-coupled transmission line generates a pinwheel locus, while another long transmission line makes the locus revolve in multiple turns around the reference impedance origin. This enables the system's output impedance to cover a wide range on the Smith Chart. This scheme is considerably useful in frequency-diversity impedance matching for RF power systems to excite an unknown or time-varying load.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"145 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132239371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Inter-radar interference in automotive FMCW radars and its mitigation challenges 汽车FMCW雷达雷达间干扰及其缓解挑战
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226222
M. Umehira, Yuu Watanabe, Xiaoyan Wang, S. Takeda, H. Kuroda
{"title":"Inter-radar interference in automotive FMCW radars and its mitigation challenges","authors":"M. Umehira, Yuu Watanabe, Xiaoyan Wang, S. Takeda, H. Kuroda","doi":"10.1109/RFIT49453.2020.9226222","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226222","url":null,"abstract":"Millimeter-wave FMCW (Frequency Modulated Continuous Wave) radar is expected to be widely used for ADAS (Advanced Driver Assistance System) and automated driving car in near future. As FMCW radar uses 3–4 GHz bandwidth to achieve 10cm class range measurement resolution, its dense deployment can cause serious inter-radar interference resulting in miss-detection and/or false detection of the targets. This invited paper overviews inter-radar interference in automotive FMCW radars and describes its mitigation challenges including the proposals and results of our group.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128301130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A High-Precision Quadrature Modulator Using a Fully-Differential CMOS Flip-Flop Phase-Shifter Suitable for the Next-Generation RF Transceivers 采用全差分CMOS触发器移相器的高精度正交调制器，适用于下一代射频收发器
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226237
T. Tsukahara
{"title":"A High-Precision Quadrature Modulator Using a Fully-Differential CMOS Flip-Flop Phase-Shifter Suitable for the Next-Generation RF Transceivers","authors":"T. Tsukahara","doi":"10.1109/RFIT49453.2020.9226237","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226237","url":null,"abstract":"In recent years, the number of wireless devices that use multi-level quadrature amplitude modulation (QAM) is increased, thereby requiring high-precision quadrature modulators composed of low-cost CMOS circuits. This paper first describes an architecture of a dual-local-oscillator (LO) switching quadrature mixer or modulator, thereby enabling high modulation accuracies. It features the compensation mechanism of phase errors of quadrature (I/Q) LO signals. This technique can be applied to digital modulation/demodulation and sideband or image-signal rejection in frequency conversion processes. Next, we propose a high-precision quadrature modulator, combining the dual-LO switching technique and a newly-proposed fully-differential CMOS flip-flop phase-shifter suitable for modern RF transceivers using multi-level QAM.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116668119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on Self-heating and Drain Voltage Effects for Buffer Traps in GaN HEMTs by Low Frequency S-parameter measurements 利用低频s参数测量研究GaN hemt中缓冲阱的自热和漏极电压效应
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226246
Masaya Tabuchi, Tomohiro Otsuka, Y. Yamaguchi, S. Shinjo, T. Oishi
{"title":"Study on Self-heating and Drain Voltage Effects for Buffer Traps in GaN HEMTs by Low Frequency S-parameter measurements","authors":"Masaya Tabuchi, Tomohiro Otsuka, Y. Yamaguchi, S. Shinjo, T. Oishi","doi":"10.1109/RFIT49453.2020.9226246","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226246","url":null,"abstract":"Effects of self-heating and drain voltage on buffer traps in GaN HEMTs were investigated by using low frequency S-parameter measurements. Because peaks in Y22 imaginary parts transformed from S parameters is related with the buffer traps, the peak frequency were measured by varying ambient temperatures and drain voltages in low frequency range from 20 Hz to 100 MHz. The experimental results were reproduced well by implementing the self-heating and field enhanced electron emission effects into the Arrhenius equation.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125068791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design of On-Chip Multi-layered Inductor for Area-Efficient Inductive Peaking 片上多层电感器的面积高效感应峰值设计
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI: 10.1109/RFIT49453.2020.9226183
A. Tsuchiya, Toshiyuki Inoue, K. Kishine
{"title":"Design of On-Chip Multi-layered Inductor for Area-Efficient Inductive Peaking","authors":"A. Tsuchiya, Toshiyuki Inoue, K. Kishine","doi":"10.1109/RFIT49453.2020.9226183","DOIUrl":"https://doi.org/10.1109/RFIT49453.2020.9226183","url":null,"abstract":"This paper discusses design of on-chip multi-layered inductor. On-chip inductor is an important component for ana-log/RF ICs. In on-chip inductor design, there are many structural parameters and we have to consider not only the inductance value but also the parasitics and the area. Thus, the design strategy is not clear yet. We prepare a large dataset of on-chip inductors by a static field-solver and analyze the dataset by principle component analysis (PCA). PCA shows that the characteristics can be described by two components even in the 4-dimensional space of the resistance, the inductance, the capacitance, and the area. According to the dimension reduction, we can guess the relationship between R, L, C and the area from a few samples.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125168092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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