{"title":"All-digital on-chip heterogeneous sensors for tracking the minimum energy point of processors","authors":"Shu Hokimoto, Jun Shiomi, T. Ishihara, H. Onodera","doi":"10.1109/ICMTS.2018.8383780","DOIUrl":"https://doi.org/10.1109/ICMTS.2018.8383780","url":null,"abstract":"Dynamically scaling the supply voltage (VDD) and the threshold voltage (VTH) is one of the most effective approaches for reducing the energy consumption of processors. However, since the best pair of VDD and VTH, which minimizes the energy consumption of processors is strongly dependent on the operating condition such as an activity factor and a performance required for the processor, it is not trivial to find the best pair of the voltages at runtime when the operating condition widely varies. With all-digital on-chip heterogeneous sensors, we propose a simple runtime method to accurately identify the best pair of VDD and VTH, which minimizes the energy consumption of a processor under a specific operating condition which is determined by a process variation, an activity factor, and a performance requirement for the processor. Measured results for a 32-bit RISC processor integrating the heterogeneous sensors show that the proposed method successfully tracks the minimum energy operating point (i.e. the best pair of VDD and VTH) of the processor even in a case that the operating condition widely varies.","PeriodicalId":271839,"journal":{"name":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122089116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Test structures without metal contacts for DC measurement of 2D-materials deposited on silicon","authors":"L. Nanver, X. Liu, T. Knežević","doi":"10.1109/ICMTS.2018.8383767","DOIUrl":"https://doi.org/10.1109/ICMTS.2018.8383767","url":null,"abstract":"A set of ring-shaped test structures is presented for electrical characterization of 2D as-deposited layers on Si that electrically interact with the substrate. The test method is illustrated by investigation of 3 different nm-thin layers that are expected to form an interfacial layer of negative fixed charge. A test procedure is described that gives a low turnaround time and non-destructive way of evaluating different deposition methods in terms of diode characteristics, interface conductance, and electron carrier injection into the deposited layer.","PeriodicalId":271839,"journal":{"name":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130258933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Open model for external mechanical stress of semiconductors and MEMS","authors":"R. Buhler, R. Giacomini","doi":"10.1109/ICMTS.2018.8383795","DOIUrl":"https://doi.org/10.1109/ICMTS.2018.8383795","url":null,"abstract":"This paper defines the details of the bending equipment solution and the calibration required for characterization of external mechanical stress in semiconductors and MEMS. The equipment is suited for use in probe station for electrical characterization of devices under controlled external mechanical stress.","PeriodicalId":271839,"journal":{"name":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114852769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Katragadda, M. Muthee, A. Gasasira, Frank Seelmann, J. Liao
{"title":"Algorithm based adaptive parametric testing for outlier detection and test time reduction","authors":"V. Katragadda, M. Muthee, A. Gasasira, Frank Seelmann, J. Liao","doi":"10.1109/ICMTS.2018.8383784","DOIUrl":"https://doi.org/10.1109/ICMTS.2018.8383784","url":null,"abstract":"Parallel test capability, enabled by numerous independent measurement channels has significantly increased throughput in parametric testing. It involves testing of numerous devices simultaneously synchronously or asynchronously. The number of devices tested for a given pad layout is increased by using higher dimensional arrays, the hallmark of which is pad sharing. Parallel testing of multiple devices with shared pads is vulnerable to device fails, where a failing device adversely affects measurement of all other devices. Information about this failing device or compromised measurement would only be evident at post analysis where a retest with a recipe change can then be ordered. In some cases retest is impossible as wafers would have already moved on to subsequent processing steps, thereby losing valuable learning opportunity. On the other hand, having to wait for post analysis requires time. Ideally failure detection and subsequent re-measure is done dynamically while the device is under test. This would require that decision making capability to be implemented in an automated tester equipment. In this work, we will discuss an algorithm based approach to adaptively change the test program allowing testing or skipping devices based on data collected real time while device is under test. The adaptive algorithm is also extended to aid in test time efficiency by eliminating tests based on measurement results of preceding tests.","PeriodicalId":271839,"journal":{"name":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129390424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Ashton, Stephen Fairbanks, Adam Bergen, E. Grund
{"title":"Electrostatic test structures for transmission line pulse and human body model testing at wafer level","authors":"R. Ashton, Stephen Fairbanks, Adam Bergen, E. Grund","doi":"10.1109/ICMTS.2018.8383762","DOIUrl":"https://doi.org/10.1109/ICMTS.2018.8383762","url":null,"abstract":"New two two-pin ESD testers are capable of doing both Transmission Line Pulse (TLP) and Human Body Model (HBM) testing at wafer level. These systems facilitate using test structures to link fundamental circuit element parameters measured with TLP and expected HBM results on final products.","PeriodicalId":271839,"journal":{"name":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129313941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Versatile chip-level integrated test vehicle for dynamic thermal evaluation","authors":"Suresh Parameswaran, S. Balakrishnan, Boon Ang","doi":"10.1109/ICMTS.2018.8383779","DOIUrl":"https://doi.org/10.1109/ICMTS.2018.8383779","url":null,"abstract":"Thermal management of semiconductor chips is becoming very important as the demand for chip performance increases. It is necessary to evaluate/manage the thermal aspects of a chip throughout the development cycle — starting from initial planning stage to deployment on customer board and beyond. In this paper, we present a versatile thermal evaluation vehicle that addresses the above requirements. This paper describes the circuit architecture/implementation, details of operation, programming aspects, usage model and various applications of a silicon chip that is successfully used as a thermal evaluation tool. The chip has 1600 sectors with programmable heat-generation and temperature-sensing capability — enabling it to generate up to 3W per mm2 and has a temperature detection range of 30C to 125C with an accuracy of +/−2C. It has a simple implementation and is easy to program and test — yet has substantial thermal evaluation capabilities. It was fabricated in 0.18um technology and packaged as flip-chip. The chip has ability to do automated on-chip temperature measurements through a tester-friendly interface and has been successfully controlled through a simple and inexpensive test-platform. The ability to generate heat on-die and monitor spatial & temporal on-die temperature makes this chip suitable to emulate many different use cases of a product during the development stage ahead of product silicon availability. The capabilities of this test-vehicle make it a suitable candidate for demonstrating power-aware/thermal-aware testing. Silicon measurement data and comparison to simulation results based on numerical models are also presented in this paper.","PeriodicalId":271839,"journal":{"name":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121294832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Process variation estimation using a combination of ring oscillator delay and FlipFlop retention characteristics","authors":"Takuma Konno, S. Nishizawa, Kazuhito Ito","doi":"10.1109/ICMTS.2018.8383773","DOIUrl":"https://doi.org/10.1109/ICMTS.2018.8383773","url":null,"abstract":"We propose an extraction method of process variation utilizing D-Flip-Flop (DFF) data retention characteristics and Ring Oscillator(RO) oscillation delay. Extracted process variation is modeled as PMOS and NMOS threshold voltage variations. Retention characteristics of the DFF circuit has different sensitivity to threshold voltage variation from the RO circuit. A DFF circuit is newly introduced as a complementary test structure of the conventional RO circuit for process variation extraction. By combining the RO circuit and the DFF circuits, we can accurately estimate the shift of global process variation. The test structure is implemented into silicon chip and the amount of global variation shift is extracted from measured data.","PeriodicalId":271839,"journal":{"name":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125435934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"NPN mismatch dependence on layout","authors":"Cory Compton","doi":"10.1109/ICMTS.2018.8383774","DOIUrl":"https://doi.org/10.1109/ICMTS.2018.8383774","url":null,"abstract":"Mismatch structures are normally designed to look at pairs of identical devices with near ideal layouts. In this paper we look into the effects of orientation and NPN density on the mismatch results of NPNs in two 0.18um SiGe BiCMOS process. The mismatch structures were added to scribeline PCM modules, which allowed us to look at the results from multiple mask sets.","PeriodicalId":271839,"journal":{"name":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125082232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Passive permutation multiplexer to detect hard and soft open fails on short flow characterization vehicle test chips","authors":"C. Hess, Shia Yu","doi":"10.1109/ICMTS.2018.8383752","DOIUrl":"https://doi.org/10.1109/ICMTS.2018.8383752","url":null,"abstract":"Short flow characterization vehicle test chips are a major contributor to fast learning cycles especially for BEOL process steps. While hard open fails can be easily detected even in large via chains, it is very difficult to detect soft open fails like a 100 times larger via resistance of just one via within a large chain of vias. A Passive Permutation Multiplexer (PPM) is presented to optimize the signal to noise ratio for detecting soft open fails. The PPM implements a balanced routing access to a local population of resistive Devices Under Test (DUT) such as via or contact chains. Thus, soft open fail are easily recognizable as outliers of all measured resistance values within such a local population of DUTs. Compared to traditional passive multiplexers, the PPM contains up to twice as many DUTs. Furthermore, significantly larger Design of Experiments (DOE) can be implemented, since the PPM can hold more than just one DOE level within the same array.","PeriodicalId":271839,"journal":{"name":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116855782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"An on-chip test structure for studying the frictional behavior of deep-RIE MEMS sidewall surfaces","authors":"R. R. Reddy, Y. Okamoto, Y. Mita","doi":"10.1109/ICMTS.2018.8383792","DOIUrl":"https://doi.org/10.1109/ICMTS.2018.8383792","url":null,"abstract":"In this paper, an on-chip micro-mechanical test structure has been developed to investigate the frictional behavior of Deep-RIE sidewall contacting surfaces of single crystal silicon which is most widely used in micromechanical systems (MEMS). The test structure is fabricated on Silicon on Insulator (SOI) wafer using standard MEMS process. Two orthogonally placed electrostatic comb-drive actuators are adopted, one comb drive is used to align a contact with the friction surfaces under a certain normal load and another one is used to generate the tangential motion on contacted sidewall surfaces. To assess the frictional behavior, both static and dynamic friction coefficients were observed on the contacted surfaces during the experiment with different DRIE process parameters. Through experiments, it was found that with the increment of normal forces, the static friction coefficient is no longer a constant value and it has less effect on dynamic friction coefficient. DRIE process parameters greatly influence the frictional properties on both static and dynamic friction coefficients.","PeriodicalId":271839,"journal":{"name":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116220567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}