{"title":"半导体和MEMS外部机械应力的开放模型","authors":"R. Buhler, R. Giacomini","doi":"10.1109/ICMTS.2018.8383795","DOIUrl":null,"url":null,"abstract":"This paper defines the details of the bending equipment solution and the calibration required for characterization of external mechanical stress in semiconductors and MEMS. The equipment is suited for use in probe station for electrical characterization of devices under controlled external mechanical stress.","PeriodicalId":271839,"journal":{"name":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Open model for external mechanical stress of semiconductors and MEMS\",\"authors\":\"R. Buhler, R. Giacomini\",\"doi\":\"10.1109/ICMTS.2018.8383795\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper defines the details of the bending equipment solution and the calibration required for characterization of external mechanical stress in semiconductors and MEMS. The equipment is suited for use in probe station for electrical characterization of devices under controlled external mechanical stress.\",\"PeriodicalId\":271839,\"journal\":{\"name\":\"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2018.8383795\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2018.8383795","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Open model for external mechanical stress of semiconductors and MEMS
This paper defines the details of the bending equipment solution and the calibration required for characterization of external mechanical stress in semiconductors and MEMS. The equipment is suited for use in probe station for electrical characterization of devices under controlled external mechanical stress.