{"title":"NPN失配依赖于布局","authors":"Cory Compton","doi":"10.1109/ICMTS.2018.8383774","DOIUrl":null,"url":null,"abstract":"Mismatch structures are normally designed to look at pairs of identical devices with near ideal layouts. In this paper we look into the effects of orientation and NPN density on the mismatch results of NPNs in two 0.18um SiGe BiCMOS process. The mismatch structures were added to scribeline PCM modules, which allowed us to look at the results from multiple mask sets.","PeriodicalId":271839,"journal":{"name":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"NPN mismatch dependence on layout\",\"authors\":\"Cory Compton\",\"doi\":\"10.1109/ICMTS.2018.8383774\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Mismatch structures are normally designed to look at pairs of identical devices with near ideal layouts. In this paper we look into the effects of orientation and NPN density on the mismatch results of NPNs in two 0.18um SiGe BiCMOS process. The mismatch structures were added to scribeline PCM modules, which allowed us to look at the results from multiple mask sets.\",\"PeriodicalId\":271839,\"journal\":{\"name\":\"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2018.8383774\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2018.8383774","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Mismatch structures are normally designed to look at pairs of identical devices with near ideal layouts. In this paper we look into the effects of orientation and NPN density on the mismatch results of NPNs in two 0.18um SiGe BiCMOS process. The mismatch structures were added to scribeline PCM modules, which allowed us to look at the results from multiple mask sets.