{"title":"结合环振荡器延迟和触发器保持特性的过程变化估计","authors":"Takuma Konno, S. Nishizawa, Kazuhito Ito","doi":"10.1109/ICMTS.2018.8383773","DOIUrl":null,"url":null,"abstract":"We propose an extraction method of process variation utilizing D-Flip-Flop (DFF) data retention characteristics and Ring Oscillator(RO) oscillation delay. Extracted process variation is modeled as PMOS and NMOS threshold voltage variations. Retention characteristics of the DFF circuit has different sensitivity to threshold voltage variation from the RO circuit. A DFF circuit is newly introduced as a complementary test structure of the conventional RO circuit for process variation extraction. By combining the RO circuit and the DFF circuits, we can accurately estimate the shift of global process variation. The test structure is implemented into silicon chip and the amount of global variation shift is extracted from measured data.","PeriodicalId":271839,"journal":{"name":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Process variation estimation using a combination of ring oscillator delay and FlipFlop retention characteristics\",\"authors\":\"Takuma Konno, S. Nishizawa, Kazuhito Ito\",\"doi\":\"10.1109/ICMTS.2018.8383773\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose an extraction method of process variation utilizing D-Flip-Flop (DFF) data retention characteristics and Ring Oscillator(RO) oscillation delay. Extracted process variation is modeled as PMOS and NMOS threshold voltage variations. Retention characteristics of the DFF circuit has different sensitivity to threshold voltage variation from the RO circuit. A DFF circuit is newly introduced as a complementary test structure of the conventional RO circuit for process variation extraction. By combining the RO circuit and the DFF circuits, we can accurately estimate the shift of global process variation. The test structure is implemented into silicon chip and the amount of global variation shift is extracted from measured data.\",\"PeriodicalId\":271839,\"journal\":{\"name\":\"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2018.8383773\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2018.8383773","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Process variation estimation using a combination of ring oscillator delay and FlipFlop retention characteristics
We propose an extraction method of process variation utilizing D-Flip-Flop (DFF) data retention characteristics and Ring Oscillator(RO) oscillation delay. Extracted process variation is modeled as PMOS and NMOS threshold voltage variations. Retention characteristics of the DFF circuit has different sensitivity to threshold voltage variation from the RO circuit. A DFF circuit is newly introduced as a complementary test structure of the conventional RO circuit for process variation extraction. By combining the RO circuit and the DFF circuits, we can accurately estimate the shift of global process variation. The test structure is implemented into silicon chip and the amount of global variation shift is extracted from measured data.