结合环振荡器延迟和触发器保持特性的过程变化估计

Takuma Konno, S. Nishizawa, Kazuhito Ito
{"title":"结合环振荡器延迟和触发器保持特性的过程变化估计","authors":"Takuma Konno, S. Nishizawa, Kazuhito Ito","doi":"10.1109/ICMTS.2018.8383773","DOIUrl":null,"url":null,"abstract":"We propose an extraction method of process variation utilizing D-Flip-Flop (DFF) data retention characteristics and Ring Oscillator(RO) oscillation delay. Extracted process variation is modeled as PMOS and NMOS threshold voltage variations. Retention characteristics of the DFF circuit has different sensitivity to threshold voltage variation from the RO circuit. A DFF circuit is newly introduced as a complementary test structure of the conventional RO circuit for process variation extraction. By combining the RO circuit and the DFF circuits, we can accurately estimate the shift of global process variation. The test structure is implemented into silicon chip and the amount of global variation shift is extracted from measured data.","PeriodicalId":271839,"journal":{"name":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Process variation estimation using a combination of ring oscillator delay and FlipFlop retention characteristics\",\"authors\":\"Takuma Konno, S. Nishizawa, Kazuhito Ito\",\"doi\":\"10.1109/ICMTS.2018.8383773\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose an extraction method of process variation utilizing D-Flip-Flop (DFF) data retention characteristics and Ring Oscillator(RO) oscillation delay. Extracted process variation is modeled as PMOS and NMOS threshold voltage variations. Retention characteristics of the DFF circuit has different sensitivity to threshold voltage variation from the RO circuit. A DFF circuit is newly introduced as a complementary test structure of the conventional RO circuit for process variation extraction. By combining the RO circuit and the DFF circuits, we can accurately estimate the shift of global process variation. The test structure is implemented into silicon chip and the amount of global variation shift is extracted from measured data.\",\"PeriodicalId\":271839,\"journal\":{\"name\":\"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2018.8383773\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2018.8383773","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

我们提出了一种利用d -触发器(DFF)数据保留特性和环振荡器(RO)振荡延迟的过程变化提取方法。将提取的过程变化建模为PMOS和NMOS阈值电压变化。DFF电路的保持特性对阈值电压变化的敏感性与RO电路不同。提出了一种新的DFF电路,作为传统RO电路的补充测试结构,用于工艺变化提取。通过结合RO电路和DFF电路,我们可以准确地估计全局过程变化的位移。将测试结构实现在硅片上,并从测量数据中提取全局变差位移量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Process variation estimation using a combination of ring oscillator delay and FlipFlop retention characteristics
We propose an extraction method of process variation utilizing D-Flip-Flop (DFF) data retention characteristics and Ring Oscillator(RO) oscillation delay. Extracted process variation is modeled as PMOS and NMOS threshold voltage variations. Retention characteristics of the DFF circuit has different sensitivity to threshold voltage variation from the RO circuit. A DFF circuit is newly introduced as a complementary test structure of the conventional RO circuit for process variation extraction. By combining the RO circuit and the DFF circuits, we can accurately estimate the shift of global process variation. The test structure is implemented into silicon chip and the amount of global variation shift is extracted from measured data.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信