A. Bhavnagarwala, S. Kosonocky, M. Immediato, D. Knebel, A. Haen
{"title":"A pico-joule class, 1 GHz, 32 KByte/spl times/64 b DSP SRAM with self reverse bias","authors":"A. Bhavnagarwala, S. Kosonocky, M. Immediato, D. Knebel, A. Haen","doi":"10.1109/VLSIC.2003.1221218","DOIUrl":"https://doi.org/10.1109/VLSIC.2003.1221218","url":null,"abstract":"New SRAM circuit techniques implemented in a standard 0.13 /spl mu/m bulk Si CMOS process are reported in this work that (i) enable pico-joule energy dissipation per accessed bit at 1 GHz, (ii) lower total leakage power by over 80% from all unaccessed cells, during both active and standby modes, using a rigorous, self reverse biasing scheme that addresses leakage due to quantum tunneling and thermal excitation in all cell transistors, with an area, performance and noise margin penalty of less than 3% each and (iii) enable a programmable leakage reduction option that lowers leakage by over 90% when stored data is no longer desired.","PeriodicalId":270304,"journal":{"name":"2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132925253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"3-Transistor antifuse OTP ROM array using standard CMOS process","authors":"Jinbong Kim, Kwyro Lee","doi":"10.1109/VLSIC.2003.1221214","DOIUrl":"https://doi.org/10.1109/VLSIC.2003.1221214","url":null,"abstract":"A 3-transistor cell CMOS OTP ROM array using CMOS antifuse (AF) based on permanent breakdown of MOSFET gate oxide is proposed, fabricated and characterized. The proposed 3-T OTP cell for ROM array is composed of an nMOS AF, a high voltage (HV) blocking nMOS, and cell access transistor, all compatible with standard CMOS technology. The experimental results show that the proposed structure can be a viable technology option as a high density OTP ROM array for modern digital as well as analog circuits.","PeriodicalId":270304,"journal":{"name":"2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133273361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A low-power microcontroller having a 0.5 /spl mu/A standby current on-chip regulator with dual-reference scheme","authors":"M. Hiraki, K. Fukui, T. Ito","doi":"10.1109/VLSIC.2003.1221156","DOIUrl":"https://doi.org/10.1109/VLSIC.2003.1221156","url":null,"abstract":"We present a microcontroller having a 0.5 /spl mu/A standby current on-chip regulator. To save regulator area, we propose a dual-reference scheme in which one voltage reference circuit is provided for active mode and another voltage reference circuit is provided for standby mode. The dual-reference scheme reduces regulator area by 50% compared with a conventional scheme in which one voltage reference circuit is commonly used both in active mode and standby mode.","PeriodicalId":270304,"journal":{"name":"2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117330338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Built-in duty cycle corrector using coded phase blending scheme for DDR/DDR2 synchronous DRAM Application","authors":"Kyu-hyoun Kim, G. Cho, Jung-Bae Lee, Sooin Cho","doi":"10.1109/VLSIC.2003.1221229","DOIUrl":"https://doi.org/10.1109/VLSIC.2003.1221229","url":null,"abstract":"This paper describes DLL (delay locked loop) with built-in DCC (duty cycle correction) capability using a newly proposed coded phase blending scheme. The proposed scheme dramatically improves the DCC range and also enhances the total DLL performance. The DLL has been designed and fabricated within 1G-bit DDR (double data rate) synchronous DRAM using 0.11 /spl mu/m process and the measurement data show that it has unlimited DCC range, faster turn-on speed and smaller jitter compared with our previous work (2001).","PeriodicalId":270304,"journal":{"name":"2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133878427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Ravi, G. Banerjee, R. Bishop, B. Bloechel, L. Carley, K. Soumyanath
{"title":"10 GHz, 20 mW, fast locking, adaptive gain PLLs with on-chip frequency calibration for agile frequency synthesis in a 0.18 /spl mu/m digital CMOS process","authors":"A. Ravi, G. Banerjee, R. Bishop, B. Bloechel, L. Carley, K. Soumyanath","doi":"10.1109/VLSIC.2003.1221197","DOIUrl":"https://doi.org/10.1109/VLSIC.2003.1221197","url":null,"abstract":"This paper describes two fully integrated 10 GHz PLLs with an LC-VCO implemented in a 0.18 /spl mu/m native digital CMOS process. In the first version, an adaptive gain circuit along with a wide-swing charge pump improves the lock range and ensures faster settling. The PLL has a 1.6 GHz tuning range, a 0.5 /spl mu/s settling time (for a frequency step equal to 10% of the tuning range), reference sideband power of -58 dBc and phase noise of -105 dBc/Hz at a 10 kHz offset and -120 dBc/Hz at a 20 MHz offset (rms jitter of 1.3 ps) while dissipating less than 20 mW from a 1.6 V power supply. Enhancing the process with deep n-wells appears to improve the noise isolation of the circuit by about 5 dB. The second variant incorporates a combination of coarse and fine tuning for the VCO along with a new frequency calibration circuit based on a digital quadri-correlator. This PLL has a 1.25 GHz tuning range, a 10 /spl mu/s settling time, a reference sideband power below the noise floor and a phase noise of -105 dBc/Hz at 10 kHz and -130 dBc/Hz at 20 MHz from the carrier (rms jitter of 1.2 ps).","PeriodicalId":270304,"journal":{"name":"2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)","volume":"117 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114059760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jonghae Kim, J. Plouchart, N. Zamdmer, M. Sherony, Liang-Hung Lu, Yue Tan, Meeyoung Yoon, K. Jenkins, Mahender Kumar, A. Ray, L. Wagner
{"title":"3-dimensional vertical parallel plate capacitors in an SOI CMOS technology for integrated RF circuits","authors":"Jonghae Kim, J. Plouchart, N. Zamdmer, M. Sherony, Liang-Hung Lu, Yue Tan, Meeyoung Yoon, K. Jenkins, Mahender Kumar, A. Ray, L. Wagner","doi":"10.1109/VLSIC.2003.1221153","DOIUrl":"https://doi.org/10.1109/VLSIC.2003.1221153","url":null,"abstract":"This paper presents high-Q and high-density 3-dimensional VPP (vertical parallel plate) capacitors fabricated in a 0.12 /spl mu/m SOI CMOS technology. An effective capacitance density of 1.76 fF//spl mu/m/sup 2/ is obtained. A quality-factor of 22 at 1 GHz is obtained for a 20 pF VPP capacitor. Also, a VPP capacitor model is proposed for the first time to design the VPP capacitor.","PeriodicalId":270304,"journal":{"name":"2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115971576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Se Jun Kim, Sang-Hoon Hong, J. Wee, Jin-Hong Ahn, J. Chung
{"title":"A low jitter, fast recoverable, fully analog DLL using tracking ADC for high speed and low stand-by power DDR I/O interface","authors":"Se Jun Kim, Sang-Hoon Hong, J. Wee, Jin-Hong Ahn, J. Chung","doi":"10.1109/VLSIC.2003.1221228","DOIUrl":"https://doi.org/10.1109/VLSIC.2003.1221228","url":null,"abstract":"For high bandwidth and low stand-by power DDR (Double Data Rate) I/O interface, a new fully analog DLL (Delay Locked Loop) are designed and implemented in 0.16 /spl mu/m DRAM process. Utilizing a tracking ADC (Analog-to-Digital Converter), a large stand-by current of the analog DLL is suppressed without losing locking information nor compromising jitter performance. Two-step duty correction scheme using multiphase clocks and phase mixing corrects an inherent duty-error of a system clock with more precision and speed, especially for a large duty-error. Proposed DLL has a 100 MHz/spl sim/520 MHz wide lock-range and a 65 psec peak-to-peak jitter and 0.064 psec/mv supply sensitivity at 2.3 v supply voltage consuming 1.1 mA of stand-by current.","PeriodicalId":270304,"journal":{"name":"2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116815598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Akiyama, N. Oodaira, T. Ishikawa, D. Hisamoto, T. Watanabe
{"title":"The Umbrella Cell: a logic-process-compatible 2T cell for SOC applications","authors":"S. Akiyama, N. Oodaira, T. Ishikawa, D. Hisamoto, T. Watanabe","doi":"10.1109/VLSIC.2003.1221170","DOIUrl":"https://doi.org/10.1109/VLSIC.2003.1221170","url":null,"abstract":"We propose the Umbrella Cell, a logic-process-compatible 2T-DRAM cell for SOC applications. The cell has two logic transistors and a planar MIM capacitor placed on a Cu wire above the transistors to form an umbrella-like structure. This requires one additional photo mask. Its area is 26 F/sup 2/, approximately 60% smaller than a 6T cell. Careful bias design and a sub-IV sensing scheme solve the coupling problems inherent to the cell and allow the use of thin-oxide logic transistors as well as operation at a bit-line voltage of 0.72 V.","PeriodicalId":270304,"journal":{"name":"2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114729276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A fourth order continuous-time complex sigma-delta ADC for low-IF GSM and EDGE receivers","authors":"F. Esfahani, P. Basedau, R. Ryter, R. Becker","doi":"10.1109/VLSIC.2003.1221166","DOIUrl":"https://doi.org/10.1109/VLSIC.2003.1221166","url":null,"abstract":"A low-power fourth order continuous-time complex /spl Sigma//spl Delta/ ADC has been designed and fabricated for low-IF (LIF) GSM and EDGE receivers in a 0.25 /spl mu/m CMOS technology. This ADC has a bandwidth of 270 kHz centered around-100 kHz. The dynamic range (DNR) is 82 dB at a sampling rate of 13 MHz even though the digital decimation filter and other blocks are active on the chip. The power consumption is 4.6 mW at 2 V supply. To our knowledge this ADC has the best performance, which has been reported so far with a complex /spl Sigma//spl Delta/ ADC for LIF mode GSM and EDGE receivers.","PeriodicalId":270304,"journal":{"name":"2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)","volume":"82 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128164907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Sakai, Y. Ishizuka, S. Matsushita, Y. Takano, S. Ogasawara, K. Honma, T. Geshi, Y. Inoue, K. Fukase
{"title":"A novel access scheme suppressing disturbance for a cross-point type ferroelectric memory","authors":"N. Sakai, Y. Ishizuka, S. Matsushita, Y. Takano, S. Ogasawara, K. Honma, T. Geshi, Y. Inoue, K. Fukase","doi":"10.1109/VLSIC.2003.1221192","DOIUrl":"https://doi.org/10.1109/VLSIC.2003.1221192","url":null,"abstract":"To resolve the disturbance problem of stored data being destroyed in a cross-point type FeRAM, which has prevented it from being put into practical use, we propose a novel access scheme for read-restore sequence. The unique point of this scheme is two restore sequences that are dynamically changed according to read-out data. Based on this scheme, the reduction of polarization induced by the disturbance is suppressed to be less than 17% after stress iteration of 10/sup 9/ times.","PeriodicalId":270304,"journal":{"name":"2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126056514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}