10 GHz, 20 mW, fast locking, adaptive gain PLLs with on-chip frequency calibration for agile frequency synthesis in a 0.18 /spl mu/m digital CMOS process

A. Ravi, G. Banerjee, R. Bishop, B. Bloechel, L. Carley, K. Soumyanath
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引用次数: 10

Abstract

This paper describes two fully integrated 10 GHz PLLs with an LC-VCO implemented in a 0.18 /spl mu/m native digital CMOS process. In the first version, an adaptive gain circuit along with a wide-swing charge pump improves the lock range and ensures faster settling. The PLL has a 1.6 GHz tuning range, a 0.5 /spl mu/s settling time (for a frequency step equal to 10% of the tuning range), reference sideband power of -58 dBc and phase noise of -105 dBc/Hz at a 10 kHz offset and -120 dBc/Hz at a 20 MHz offset (rms jitter of 1.3 ps) while dissipating less than 20 mW from a 1.6 V power supply. Enhancing the process with deep n-wells appears to improve the noise isolation of the circuit by about 5 dB. The second variant incorporates a combination of coarse and fine tuning for the VCO along with a new frequency calibration circuit based on a digital quadri-correlator. This PLL has a 1.25 GHz tuning range, a 10 /spl mu/s settling time, a reference sideband power below the noise floor and a phase noise of -105 dBc/Hz at 10 kHz and -130 dBc/Hz at 20 MHz from the carrier (rms jitter of 1.2 ps).
10 GHz, 20 mW,快速锁定,自适应增益锁相环,片上频率校准,用于0.18 /spl mu/m数字CMOS工艺中的敏捷频率合成
本文描述了两个完全集成的10 GHz锁相环和一个LC-VCO,以0.18 /spl mu/m的原生数字CMOS工艺实现。在第一个版本中,自适应增益电路以及宽摆电荷泵提高了锁定范围,并确保更快的沉降。该锁相环的调谐范围为1.6 GHz,稳定时间为0.5 /spl mu/s(频率步进等于调谐范围的10%),参考边带功率为-58 dBc,相位噪声为-105 dBc/Hz, 10 kHz偏置和20 MHz偏置时为-120 dBc/Hz(有效值抖动为1.3 ps), 1.6 V电源的功耗小于20 mW。用深n-井加强这一过程似乎可以使电路的噪声隔离提高约5db。第二种变体结合了VCO的粗微调组合以及基于数字四次方相关器的新频率校准电路。该锁相环的调谐范围为1.25 GHz,稳定时间为10 /spl mu/s,参考边带功率低于本底噪声,载波的相位噪声在10 kHz时为-105 dBc/Hz,在20 MHz时为-130 dBc/Hz(有效值抖动为1.2 ps)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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