交叉点型铁电存储器中一种新的抑制干扰的存取方案

2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408) Pub Date : 2003-06-12 DOI:10.1109/VLSIC.2003.1221192

N. Sakai, Y. Ishizuka, S. Matsushita, Y. Takano, S. Ogasawara, K. Honma, T. Geshi, Y. Inoue, K. Fukase

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引用次数: 2

摘要

为解决交叉点式FeRAM存储数据被破坏的干扰问题，提出了一种新的读恢复序列访问方案。该方案的独特之处在于两个根据读出数据动态变化的恢复序列。基于该方案，经过10/sup / 9次应力迭代后，扰动引起的极化衰减被抑制在17%以下。

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A novel access scheme suppressing disturbance for a cross-point type ferroelectric memory

To resolve the disturbance problem of stored data being destroyed in a cross-point type FeRAM, which has prevented it from being put into practical use, we propose a novel access scheme for read-restore sequence. The unique point of this scheme is two restore sequences that are dynamically changed according to read-out data. Based on this scheme, the reduction of polarization induced by the disturbance is suppressed to be less than 17% after stress iteration of 10/sup 9/ times.

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2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)

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