The Umbrella Cell: a logic-process-compatible 2T cell for SOC applications

S. Akiyama, N. Oodaira, T. Ishikawa, D. Hisamoto, T. Watanabe
{"title":"The Umbrella Cell: a logic-process-compatible 2T cell for SOC applications","authors":"S. Akiyama, N. Oodaira, T. Ishikawa, D. Hisamoto, T. Watanabe","doi":"10.1109/VLSIC.2003.1221170","DOIUrl":null,"url":null,"abstract":"We propose the Umbrella Cell, a logic-process-compatible 2T-DRAM cell for SOC applications. The cell has two logic transistors and a planar MIM capacitor placed on a Cu wire above the transistors to form an umbrella-like structure. This requires one additional photo mask. Its area is 26 F/sup 2/, approximately 60% smaller than a 6T cell. Careful bias design and a sub-IV sensing scheme solve the coupling problems inherent to the cell and allow the use of thin-oxide logic transistors as well as operation at a bit-line voltage of 0.72 V.","PeriodicalId":270304,"journal":{"name":"2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2003.1221170","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

We propose the Umbrella Cell, a logic-process-compatible 2T-DRAM cell for SOC applications. The cell has two logic transistors and a planar MIM capacitor placed on a Cu wire above the transistors to form an umbrella-like structure. This requires one additional photo mask. Its area is 26 F/sup 2/, approximately 60% smaller than a 6T cell. Careful bias design and a sub-IV sensing scheme solve the coupling problems inherent to the cell and allow the use of thin-oxide logic transistors as well as operation at a bit-line voltage of 0.72 V.
伞式电池:用于SOC应用的逻辑过程兼容的2T电池
我们提出雨伞单元,一个逻辑-过程兼容的2T-DRAM单元SOC应用。该电池具有两个逻辑晶体管和一个平面MIM电容器,放置在晶体管上方的铜线上,形成伞状结构。这需要一个额外的照片掩模。其面积为26f /sup /,比6T电池小约60%。仔细的偏置设计和亚iv传感方案解决了电池固有的耦合问题,并允许使用薄氧化物逻辑晶体管以及在0.72 V的位线电压下工作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信