2018 76th Device Research Conference (DRC)最新文献_第10页

Reliable High-Quality Metal-Embedded h-BN Contacts to p-type WSe2 可靠的高质量金属嵌入h-BN接触p型WSe2

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442181

Younghun Jung, M. Choi, Abhinandan Borah, Ankur Nipane, W. Yoo, J. Hanel, J. Teherani

引用次数: 0

Surface Passivated InN Nanowire and Graphene Heterojunction Based Memtransistor 表面钝化铟纳米线与石墨烯异质结mem晶体管

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442135

I. Jahangir, Md. A. Uddin, A. Singh, A. Franken, M. V. S. Chandrashekha, G. Koley

引用次数: 1

Energy-Efficient, Two-Dimensional Analog Memory for Neuromorphic Computing 用于神经形态计算的高能效二维模拟存储器

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442140

M. Sharbati, Yanhao Du, Feng Xiong

引用次数: 0

1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes 1.5 kV垂直Ga2O3沟槽- mis肖特基势垒二极管

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442245

Wenshen Li, K. Nomoto, Zongyang Hu, N. Tanen, K. Sasaki, A. Kuramata, D. Jena, H. Xing

{"title":"1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes","authors":"Wenshen Li, K. Nomoto, Zongyang Hu, N. Tanen, K. Sasaki, A. Kuramata, D. Jena, H. Xing","doi":"10.1109/DRC.2018.8442245","DOIUrl":"https://doi.org/10.1109/DRC.2018.8442245","url":null,"abstract":"$beta-mathrm{Ga}_{2}mathrm{O}_{3}$ electronic devices for high power applications have seen rapid development over the recent years, due to the excellent material properties including an extremely large band-gap, high critical electric field, decent electron mobility and the availability of low-cost bulk substrates. As unipolar devices, Ga2O3 vertical Schottky barrier diodes (SBDs) have fast switching capability, while enjoying all the superior properties of Ga2O3. With the development of halide vapor phase epitaxy (HVPE) capable of delivering high quality thick n– epitaxial layers [1], $mathrm{Ga}_{2}mathrm{O}_{3}$ vertical SBDs have shown promising results with up to 1 kV breakdown voltage (BV) together with decent on-resistance $(mathrm{R}_{mathrm{on}})$ of $2-6 mathrm{m}Omegacdot mathrm{cm}^{2} [1-3]$. However, the results are still far from the projected performance which surpasses GaN and SiC [4]. One important reason is the high reverse leakage current due to the high surface electric field, which causes thermionic-field emission and barrier height lowering, especially at the device edge where field crowding occurs. The leakage current can be much reduced by edge termination techniques such as field-plating [3]. More effectively, a trench-metal-insulator-semiconductor (MIS) structure can be utilized to reduce the leakage current [5], taking advantage of the reduced surface field (RESURF) effect [6]. In this work, we demonstrate Ga2O3 trench-MIS SBDs with a record-high 1.5 kV breakdown voltage without edge termination, together with a ~104 times reduction in reverse leakage current compared with regular SBDs.","PeriodicalId":269641,"journal":{"name":"2018 76th Device Research Conference (DRC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129154719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

Optical Gain and Loss Measurements of Semipolar III-nitride Laser Diodes with ITO/thin-p-GaN Cladding Layers ITO/薄p- gan包层半极性iii -氮化激光二极管的光学增益和损耗测量

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442174

S. Mehari, D. Cohen, Daniel L. Becerrea, C. Weisbuch, S. Nakamura, S. Denbaars

{"title":"Optical Gain and Loss Measurements of Semipolar III-nitride Laser Diodes with ITO/thin-p-GaN Cladding Layers","authors":"S. Mehari, D. Cohen, Daniel L. Becerrea, C. Weisbuch, S. Nakamura, S. Denbaars","doi":"10.1109/DRC.2018.8442174","DOIUrl":"https://doi.org/10.1109/DRC.2018.8442174","url":null,"abstract":"Laser diodes (LDs) based on the group III-nitride material system are forecasted to be the key components of next generation high-intensity white lighting systems [1]. For such systems, LDs offer more power per chip area, much higher spatial brightness, and no efficiency droop above threshold compared to light emitting diodes (LEDs). To meet these expectations, high-power and high-efficiency continuous-wave (CW) operation of a LD is essential. However, to date, InGaN LDs performance is still hampered by a high operating voltage and a poor differential efficiency, which result in lower wall-plug efficiencies (WPE) than InGaN LEDs or other III-V LDs [2], [3]. We have recently demonstrated an enhanced CW performance of blue LDs grown on a semipolar $(20bar{2}bar{1})$ n-GaN substrate by replacing part of the resistive p-GaN cladding layer with a tin-doped indium oxide (ITO) layer [4]. With this transparent conductive oxide (TCO) layer, which has a lower modal optical loss than standard metallic p-contacts, and thinned p-GaN layer a very low operating voltage was obtained. Here, we present detailed gain and absorption measurements of these devices. We show a very low optical loss by redesigning the AlGaN electron blocking layer and the p-waveguide doping profile.","PeriodicalId":269641,"journal":{"name":"2018 76th Device Research Conference (DRC)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134105954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Approaches for Dynamic IR N ano-Optics using 2D Materials 基于二维材料的动态红外纳米光学方法

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8444105

J. Caldwell

引用次数: 0

Bias Stress Stability of Carbon Nanotube Transistors with Implications for Sensors 碳纳米管晶体管的偏置应力稳定性及其对传感器的影响

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442226

Steven G. Noyce, James L. Doherty, A. Franklin

引用次数: 0

Nonlinearity Enhancement by Positive Pulse Stress in Multilevel Cell Selectorless RRAM Applications 多电平无选择器RRAM应用中正脉冲应力的非线性增强

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442232

Ying‐Chen Chen, Xiaohan Wu, Yao‐Feng Chang, Jack C. Lee

引用次数: 1

Challenges and opportunities in integration of 2D materials on 3D substrates: Materials and device perspectives 在3D基板上集成2D材料的挑战和机遇:材料和器件的观点

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442141

M. Neupane, D. Ruzmetov, R. Burke, A. G. Birdwell, Decarlos Taylor, M. Chin, T. O'Regan, F. Crowne, B. Nichols, P. Shah, E. Byrd, T. Ivanov

{"title":"Challenges and opportunities in integration of 2D materials on 3D substrates: Materials and device perspectives","authors":"M. Neupane, D. Ruzmetov, R. Burke, A. G. Birdwell, Decarlos Taylor, M. Chin, T. O'Regan, F. Crowne, B. Nichols, P. Shah, E. Byrd, T. Ivanov","doi":"10.1109/DRC.2018.8442141","DOIUrl":"https://doi.org/10.1109/DRC.2018.8442141","url":null,"abstract":"In recent years, large investments into the research of semiconducting two-dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDs) have elucidated interesting device related physical phenomena such as valleytronics [1], 2D superconductivity [2], 2D excitonic effects [3] and vertical tunneling [4]. TMDs offer layer-dependent chemical tunability of electronic and optoelectronic properties governed by interlayer van der Waals (vdW) forces [5]. Because of their layered nature, these low-dimensional materials can be combined to form multifunctional heterostructure materials exhibiting entirely new physical systems offering new degrees of flexibility in designing electronics, optoelectronics and other novel devices [6], [7]. In the last couple of years, the focus in the 2D materials research have shifted from exploration of proof-of-concept devices using mechanically exfoliated materials to more advanced device processing using high-quality large-scale growth based on advanced scalable vdW-epitaxy techniques such as powder vapor deposition (PVD) and chemical vapor deposition (CVD).","PeriodicalId":269641,"journal":{"name":"2018 76th Device Research Conference (DRC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131184221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Fast Recovery Performance of β-Ga2O3 Trench MOS Schottky Barrier Diodes β-Ga2O3沟槽MOS肖特基势垒二极管的快速恢复性能

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442267

A. Takatsuka, K. Sasaki, D. Wakimoto, Q. Thieu, Y. Koishikawa, Junichi Arima, Jun Hirabayashi, Daisuke Inokuchi, Yoshiaki Fukumitsu, A. Kuramata, S. Yamakoshi

引用次数: 16