可靠的高质量金属嵌入h-BN接触p型WSe2

Younghun Jung, M. Choi, Abhinandan Borah, Ankur Nipane, W. Yoo, J. Hanel, J. Teherani
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摘要

二维(2D)材料由于其独特的性能在下一代电子应用中得到了广泛的研究。最近,与石墨烯相比,过渡金属二硫族化合物(TMDs)由于其大带隙(> 1 eV)而显示出前景[1]。Mos2作为一种n型半导体,是目前TMD材料中最受关注的[2]。WSe2是p型2D半导体的有力候选者,因为它的高场效应空穴迁移率高达500 cm2/(y·s),已经从室温四端测量中提取出来,并且与Mos2相比具有更高的抗氧化性[3-4],然而,超薄WSe2的大带隙使得形成欧姆接触变得困难。在这里,我们描述了金属嵌入h-BN触点的制造,并展示了电学结果,证明该工艺可以产生高质量的双层WSe2 p- fet触点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reliable High-Quality Metal-Embedded h-BN Contacts to p-type WSe2
Two-dimensional (2D) materials have been widely studied due to their unique properties for next-generation electronic applications. Recently, transition metal dichalcogenides (TMDs) have shown promise due to their large band gaps (> 1 eV) as compared to graphene [1]. So far, Mos2 has received the most attention among TMD materials as an n-type semiconductor [2]. WSe2 is a strong candidate for a p-type 2D semiconductor due to its high field effect hole mobility as high as 500 cm2/(y·s) has been extracted from room-temperature four-terminal measurements and higher oxidation resistance compared to Mos2 [3–4], however, the large bandgap of ultra-thin WSe2 makes forming an ohmic contact difficult. Here, we describe the fabrication of metal-embedded h-BN contacts and show electrical results that demonstrate that this process yields high-quality contacts to bilayer WSe2 p-FETs.
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