2018 76th Device Research Conference (DRC)最新文献_第9页

2D Ferroelectric $pmb{mathrm{CuInP}_{2}mathrm{S}_{6}}$: Synthesis, ReRAM, and FeRAM 二维铁电$pmb{mathrm{CuInP}_{2}}mathrm{S}_{6}}$:合成、ReRAM和FeRAM

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442257

Pai-Ying Liao, M. Si, G. Qiu, P. Ye

引用次数: 0

Self-powered Flexible Strain Sensor with Graphene/P(VDF-TrFE) Heterojunction 石墨烯/P(VDF-TrFE)异质结自供电柔性应变传感器

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442195

Soaram Kim, Sean Gorman, Yongchang Dong, A. Rao, G. Koley

引用次数: 0

Probing Self-Heating in RRAM Devices by Sub-100 nm Spatially Resolved Thermometry 亚100nm空间分辨测温法探测RRAM器件的自热

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442187

S. Deshmukh, M. Muñoz-Rojo, E. Yalon, S. Vaziri, E. Pop

引用次数: 6

Recent Advances in Ga2O3 MOSFET Technologies Ga2O3 MOSFET技术的最新进展

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442156

M. Higashiwaki, M. Wong, T. Kamimura, Y. Nakata, Chia-Hung Lin, R. Lingaparthi, A. Takeyama, T. Makino, T. Ohshima, N. Hatta, K. Yagi, K. Goto, K. Sasaki, Shinya Watanabe, A. Kuramata, S. Yamakoshi, K. Konishi, H. Murakami, Y. Kumagai

{"title":"Recent Advances in Ga2O3 MOSFET Technologies","authors":"M. Higashiwaki, M. Wong, T. Kamimura, Y. Nakata, Chia-Hung Lin, R. Lingaparthi, A. Takeyama, T. Makino, T. Ohshima, N. Hatta, K. Yagi, K. Goto, K. Sasaki, Shinya Watanabe, A. Kuramata, S. Yamakoshi, K. Konishi, H. Murakami, Y. Kumagai","doi":"10.1109/DRC.2018.8442156","DOIUrl":"https://doi.org/10.1109/DRC.2018.8442156","url":null,"abstract":"Historically, the exploration of III-V compound semiconductors has begun with small bandgap materials and proceeded to large bandgap ones in recent years, that is, from GaAs-based compounds to GaN-based ones. We consider that gallium oxide (Ga2O3) is no exception in following this history and is poised to become the next mainstream of compound semiconductor research due to its attractive material properties based on an extremely large bandgap of about 4.5 eV [1]. This bandgap energy is not only much larger than those of representative wide bandgap semiconductors such as GaN and SiC but also unique among single-crystal semiconductors. Furthermore, Ga2O3 has another important advantage for commercialization over the other wide bandgap materials in that large-size, high-quality bulk single crystals can be synthesized by melt growth methods, thus allowing native substrates to be produced at a relatively low cost [2]. Recently, these two features have drawn much attention to Ga2O3, resulting in a rapid expansion of the Ga2O3 community.","PeriodicalId":269641,"journal":{"name":"2018 76th Device Research Conference (DRC)","volume":"162 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134131276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect Transistors 锗铪氧化锆纳米线铁电场效应晶体管极化开关的时间响应

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442218

Sami Alghamdi, W. Chung, M. Si, P. Ye

引用次数: 1

Surface Passivated InN Nanowire and Graphene Heterojunction Based Memtransistor 表面钝化铟纳米线与石墨烯异质结mem晶体管

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442135

I. Jahangir, Md. A. Uddin, A. Singh, A. Franken, M. V. S. Chandrashekha, G. Koley

引用次数: 1

Investigation of Threshold Switch OFF -State Resistance on Performance Enhancement in 2D Mos2 Phase-FETs 阈值开关关断电阻对二维Mos2相场效应管性能提升的影响研究

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442233

B. Grisafe, S. Datta

引用次数: 0

1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes 1.5 kV垂直Ga2O3沟槽- mis肖特基势垒二极管

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442245

Wenshen Li, K. Nomoto, Zongyang Hu, N. Tanen, K. Sasaki, A. Kuramata, D. Jena, H. Xing

{"title":"1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes","authors":"Wenshen Li, K. Nomoto, Zongyang Hu, N. Tanen, K. Sasaki, A. Kuramata, D. Jena, H. Xing","doi":"10.1109/DRC.2018.8442245","DOIUrl":"https://doi.org/10.1109/DRC.2018.8442245","url":null,"abstract":"$beta-mathrm{Ga}_{2}mathrm{O}_{3}$ electronic devices for high power applications have seen rapid development over the recent years, due to the excellent material properties including an extremely large band-gap, high critical electric field, decent electron mobility and the availability of low-cost bulk substrates. As unipolar devices, Ga2O3 vertical Schottky barrier diodes (SBDs) have fast switching capability, while enjoying all the superior properties of Ga2O3. With the development of halide vapor phase epitaxy (HVPE) capable of delivering high quality thick n– epitaxial layers [1], $mathrm{Ga}_{2}mathrm{O}_{3}$ vertical SBDs have shown promising results with up to 1 kV breakdown voltage (BV) together with decent on-resistance $(mathrm{R}_{mathrm{on}})$ of $2-6 mathrm{m}Omegacdot mathrm{cm}^{2} [1-3]$. However, the results are still far from the projected performance which surpasses GaN and SiC [4]. One important reason is the high reverse leakage current due to the high surface electric field, which causes thermionic-field emission and barrier height lowering, especially at the device edge where field crowding occurs. The leakage current can be much reduced by edge termination techniques such as field-plating [3]. More effectively, a trench-metal-insulator-semiconductor (MIS) structure can be utilized to reduce the leakage current [5], taking advantage of the reduced surface field (RESURF) effect [6]. In this work, we demonstrate Ga2O3 trench-MIS SBDs with a record-high 1.5 kV breakdown voltage without edge termination, together with a ~104 times reduction in reverse leakage current compared with regular SBDs.","PeriodicalId":269641,"journal":{"name":"2018 76th Device Research Conference (DRC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129154719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

Energy-Efficient, Two-Dimensional Analog Memory for Neuromorphic Computing 用于神经形态计算的高能效二维模拟存储器

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442140

M. Sharbati, Yanhao Du, Feng Xiong

引用次数: 0

GaN Devices 氮化镓设备

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/drc.2018.8442239

引用次数: 2