2018 76th Device Research Conference (DRC)最新文献_第9页

Self-powered Flexible Strain Sensor with Graphene/P(VDF-TrFE) Heterojunction 石墨烯/P(VDF-TrFE)异质结自供电柔性应变传感器

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442195

Soaram Kim, Sean Gorman, Yongchang Dong, A. Rao, G. Koley

引用次数: 0

Probing Self-Heating in RRAM Devices by Sub-100 nm Spatially Resolved Thermometry 亚100nm空间分辨测温法探测RRAM器件的自热

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442187

S. Deshmukh, M. Muñoz-Rojo, E. Yalon, S. Vaziri, E. Pop

引用次数: 6

Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect Transistors 锗铪氧化锆纳米线铁电场效应晶体管极化开关的时间响应

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442218

Sami Alghamdi, W. Chung, M. Si, P. Ye

引用次数: 1

Recent Advances in Ga2O3 MOSFET Technologies Ga2O3 MOSFET技术的最新进展

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442156

M. Higashiwaki, M. Wong, T. Kamimura, Y. Nakata, Chia-Hung Lin, R. Lingaparthi, A. Takeyama, T. Makino, T. Ohshima, N. Hatta, K. Yagi, K. Goto, K. Sasaki, Shinya Watanabe, A. Kuramata, S. Yamakoshi, K. Konishi, H. Murakami, Y. Kumagai

{"title":"Recent Advances in Ga2O3 MOSFET Technologies","authors":"M. Higashiwaki, M. Wong, T. Kamimura, Y. Nakata, Chia-Hung Lin, R. Lingaparthi, A. Takeyama, T. Makino, T. Ohshima, N. Hatta, K. Yagi, K. Goto, K. Sasaki, Shinya Watanabe, A. Kuramata, S. Yamakoshi, K. Konishi, H. Murakami, Y. Kumagai","doi":"10.1109/DRC.2018.8442156","DOIUrl":"https://doi.org/10.1109/DRC.2018.8442156","url":null,"abstract":"Historically, the exploration of III-V compound semiconductors has begun with small bandgap materials and proceeded to large bandgap ones in recent years, that is, from GaAs-based compounds to GaN-based ones. We consider that gallium oxide (Ga2O3) is no exception in following this history and is poised to become the next mainstream of compound semiconductor research due to its attractive material properties based on an extremely large bandgap of about 4.5 eV [1]. This bandgap energy is not only much larger than those of representative wide bandgap semiconductors such as GaN and SiC but also unique among single-crystal semiconductors. Furthermore, Ga2O3 has another important advantage for commercialization over the other wide bandgap materials in that large-size, high-quality bulk single crystals can be synthesized by melt growth methods, thus allowing native substrates to be produced at a relatively low cost [2]. Recently, these two features have drawn much attention to Ga2O3, resulting in a rapid expansion of the Ga2O3 community.","PeriodicalId":269641,"journal":{"name":"2018 76th Device Research Conference (DRC)","volume":"162 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134131276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Optical and THz Devices 光学和太赫兹器件

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/drc.2018.8442176

引用次数: 0

CMOS Technology with Integrated Carbon-Nanotube Contact Plugs 集成碳纳米管接触插头的CMOS技术

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442155

C. Prawoto, Suwen Li, M. Chan

引用次数: 0

All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs 所有MOCVD都生长了250 nm栅长Al0.70Ga0.30N的mesfet

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442167

H. Xue, T. Razzak, Seongmo Hwang, A. Coleman, S. Bajaj, Yuewei Zhang, Zane Jamal-Eddin, S. H. Sohel, Asif Khan, S. Rajan, W. Lu

引用次数: 2

GaN Devices 氮化镓设备

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/drc.2018.8442239

引用次数: 2

The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond 衬底对顶栅p-Ga203场效应晶体管性能的影响:在金刚石上记录980 mA/mm的高漏极电流

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442276

J. Noh, M. Si, Hong Zhou, M. Tadjer, P. Ye

{"title":"The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond","authors":"J. Noh, M. Si, Hong Zhou, M. Tadjer, P. Ye","doi":"10.1109/DRC.2018.8442276","DOIUrl":"https://doi.org/10.1109/DRC.2018.8442276","url":null,"abstract":"For high power devices, monolithic $beta$ -Ga203 has been identified as an emerging ultra-wide bandgap semiconductor material because it has a large bandgap of 4.8 eV and a high breakdown electric field of 8 MV/cm [1]. $beta$ -Ga203 has also the potential to realize low-cost large-size native bulk substrates by melt-grown methods [2], [3]. However, the output power density and the maximum drain current density of $beta$ -Ga203 devices can be seriously limited due to its low thermal conductivity $(kappa$ of 10–25 W/m·K and self-heating effect (SHE) [4], [5]. If the heat from the channel cannot be well dissipated through the substrate, SHE can lead to significant channel temperature increase, thus degrade the device performance and the long-term reliability [6]. In order to overcome this material constraint, we explored nano-membrane transferring technique and studied $beta$ -Ga203 nano-membrane field-effect transistors (FETs) on different foreign substrates such as sapphire $(kappa=40 mathrm{W}/mathrm{m}cdot mathrm{K})$ and Si02/Si $(kappa=1.5 mathrm{W}/mathrm{m}cdot text{K for} 270 text{nm SiO}_{2})$ and compared the impact of these substrates on the device performance [7]–[9]. In this work, furthermore, we demonstrate the first B-Ga203 Fet on a diamond substrate with an extremely high thermal conductivity of $1,000sim 2,200 mathrm{W}/mathrm{m}cdot mathrm{K}$ [10] and compare with devices on a sapphire or Si02/Si substrate.","PeriodicalId":269641,"journal":{"name":"2018 76th Device Research Conference (DRC)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130827143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13

Theory and Design of Electron Blocking Layers for III-N Based Laser Diodes by Numerical Simulation 基于数值模拟的III-N基激光二极管电子阻挡层理论与设计

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442243

K. Mehta, Yuh-Shiuan Liu, Jialin Wang, Hoon Jeong, T. Detchprohm, Young Jae Park, S. Shen, R. Dupuis, P. Yoder

引用次数: 10