2018 76th Device Research Conference (DRC)最新文献_第8页

All CVD Boron Nitride Encapsulated Graphene FETs 所有CVD氮化硼封装石墨烯场效应管

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442264

H. Pandey, M. Shaygan, S. Sawallich, S. Kataria, M. Otto, Zhenxing Wang, M. Nagel, D. Neumaier, M. Lemme

引用次数: 1

Epitaxial Gd2O3on Si (111) Substrate by Sputtering to Enable Low Cost SOI 用溅射法在Si(111)衬底上外延gd2o3以实现低成本SOI

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442170

K. R. K. Amlta, A. Laha, S. Mahapatra, U. Gangway

引用次数: 2

A unified current-voltage and charge-voltage model of quasi-ballistic III-nitride HEMTs for RF applications 准弹道iii -氮化hemt的统一电流电压和电荷电压模型

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442193

Kexin Li, S. Rakheja

{"title":"A unified current-voltage and charge-voltage model of quasi-ballistic III-nitride HEMTs for RF applications","authors":"Kexin Li, S. Rakheja","doi":"10.1109/DRC.2018.8442193","DOIUrl":"https://doi.org/10.1109/DRC.2018.8442193","url":null,"abstract":"III-nitride high electron mobility transistors (HEMTs) are a strong candidate for high-power radio frequency (RF) applications due to their ability to support high breakdown fields, while maintaining a high electron mobility and a high density of the two-dimensional electron gas (2DEG). Analytic device models that are physically motivated and mathematically robust are preferred for circuit simulations. Most prior works have focused on compact models for 111-nitride HEMTs that operate in the drift-diffusive limit, while Ref. [1] presents a threshold-voltage-based compact model for quasi-ballistic gallium nitride (GaN) HEMTs using an empirical channel charge model. In this paper, we present a unified and self-consistent current-voltage (I-V) and capacitance-voltage (C-V) model of III-nitride HEMTs that is valid for quasi-ballistic transport. The terminal charges are used to calculate inter-nodal capacitances ensuring charge conservation in the device. Both I-V and C-V model are validated against numerical TCAD simulations and experimental data of short-channel GaN HEMTs. Effects of fringing charge resulting from bulk and surface traps are also incorporated in the model. Key equations of the dynamic model are presented in Table 1. Details of the static I-V model of III-nitride HEMTs are presented elsewhere by the authors [2], and equations are omitted for brevity.","PeriodicalId":269641,"journal":{"name":"2018 76th Device Research Conference (DRC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124515257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Photo-oxidized HfS2 - An embeddable and writable high-k dielectric for flexible Van der Waals nano-electronics 用于柔性范德华纳米电子学的可嵌入可写高k介电材料

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442164

N. Peimyoo, J. Mehew, M. Barnes, A. D. Sanctis, I. Amit, J. Escolar, K. Anastasiou, Ali Gholina, A. Rooney, S. Haigh, S. Russo, M. Craciun, F. Withers

{"title":"Photo-oxidized HfS2 - An embeddable and writable high-k dielectric for flexible Van der Waals nano-electronics","authors":"N. Peimyoo, J. Mehew, M. Barnes, A. D. Sanctis, I. Amit, J. Escolar, K. Anastasiou, Ali Gholina, A. Rooney, S. Haigh, S. Russo, M. Craciun, F. Withers","doi":"10.1109/DRC.2018.8442164","DOIUrl":"https://doi.org/10.1109/DRC.2018.8442164","url":null,"abstract":"Scaling improvements in conventional semiconductor devices have been facilitated by incorporating high-k dielectric materials such as Hf02[1]. This has led to increased device density and lower drive voltages. Similarly, the rapid technological progress of flexible Van der Waals (VdW) heterostructure devices based on two-dimensional (2D) materials, will also likely require comparable scaling to reduce device drive voltages to a comparable level (~ 1 V). Typically, flexible VdW heterostructures rely on high purity hexagonal boron nitride dielectrics (hBN) which has a dielectric constant $ksim 4$, 4-5 times smaller than Hf02[2]. To overcome these limitations, we developed a novel technology to incorporate the high-k dielectric HfOx within VdW heterostructures through photo-oxidation of the 2D semiconductor HfS2 via laser irradiation. The resultant oxide is found to have a dielectric constant $ksim 15$. This oxide can be selectively written even once embedded within complex multi-layer VdW heterostructures, and under metallic contacts. This avoids the need for expensive sputtering and atomic layer deposition techniques, which are known to badly damage 2D materials. We exploit this technology to demonstrate several different VdW devices to suit various functionalities, including: flexible field effect transistors (FETs), resistive switching memory elements (ReRAMs) and light emitting and ultra-fast light detecting quantum well structures. All these devices show performances equal or superior to state-of-the-art VdW devices, with FETs displaying on/off ratios of 104 and subthreshold swings of 60 mV / dec.","PeriodicalId":269641,"journal":{"name":"2018 76th Device Research Conference (DRC)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124572999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

First demonstration of vacuum-sealed fully integrated BEOL-compatible field emission devices for Si integrated high voltage applications 首次展示用于硅集成高压应用的真空密封完全集成beol兼容场发射器件

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442219

N. Deka, V. Subramanian

引用次数: 1

Enhanced P-Type Behavior in 2D WSe2 via Chemical Defect Engineering 通过化学缺陷工程增强二维WSe2的p型行为

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442266

A. Rai, J. Park, Chenxi Zhang, I. Kwak, S. Wolf, S. Vishwanath, Xinyu Lin, J. Furdyna, H. Xing, Kyeongjae Cho, A. Kummel, S. Banerjee

引用次数: 1

9 GHz passively mode locked quantum dot lasers directly grown on Si 直接生长在硅基上的9ghz被动锁模量子点激光器

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442165

Songtao Liu, J. Norman, D. Jung, M. Kennedy, A. Gossard, J. Bowers

引用次数: 0

Supercapacity (>1000 fJF/cm2) charge release in a CVD-grown WSe2 FET incorporating a PEO: CsCI04 side gate 在包含PEO: CsCI04侧栅的cvd生长的WSe2场效应管中，超容量(>1000 fJF/cm2)电荷释放

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442277

M. A. Heidarlou, B. Jariwala, P. Paletti, S. Rouvimov, J. A. Robinsorr, S. Fullerton‐Shirey, A. Seabaugh

{"title":"Supercapacity (>1000 fJF/cm2) charge release in a CVD-grown WSe2 FET incorporating a PEO: CsCI04 side gate","authors":"M. A. Heidarlou, B. Jariwala, P. Paletti, S. Rouvimov, J. A. Robinsorr, S. Fullerton‐Shirey, A. Seabaugh","doi":"10.1109/DRC.2018.8442277","DOIUrl":"https://doi.org/10.1109/DRC.2018.8442277","url":null,"abstract":"We report extraordinarily high capacitance density in tungsten diselenide (WSe2) field-effect transistors (FETs) capped with polyethylene oxide (PEO) and ion doped with cesium perchlorate (CsCI04). The FETs have 3–4 monolayer WSe2 channels grown by chemical vapor deposition (CVD) using W(CO)6 and H2Se at 800 °C for 30 minutes [1]. A stepper-based process was used to fabricate the transistors and an 11 nm Al2O3 atomic layer deposited (ALD) gate dielectric was formed on the WSe2 with a low temperature nucleation layer, 1 nm Ah03, deposited at 110 °C to facilitate nucleation followed by a 10 nm Ah03 deposited at 200 °C, after Kwak [2]. The n-FET achieves an ON/OFF ratio of 106 with noise-floor-limited gate current. Most prior studies of WSe2 FETs have been on exfoliated materials and to our knowledge there is only one prior report of a top-gated CVD WSe2 p-FET [3]. Following FET characterization PEO: CsCI04 was drop-cast and annealed at 90 °C for 3 minutes in Ar after Xu [4], yielding a layer thickness of 400 nm as measured by transmission electron microscopy (TEM). Ion gating using a side gate ($6 mumathrm{m}$ from the WSe2 mesa edge) produces ambipolar transfer characteristics with approximately equal ON-currents of $2 mumathrm{A}/mumathrm{m}$ attributed to the multi-work-function source/drain contacts [5]. ON/OFF current ratio exceeds 106 with field-effect electron and hole mobilities of 10 and 25 cm2/Vs respectively and subthreshold swings of 260 and 180 mY/decade respectively. Atomic force microscope images show that the WSe2 nucleates in triangles which are apparent in Fig. 1; FET characteristics after testing of the transistor are shown in Fig. 2 along with TEM.","PeriodicalId":269641,"journal":{"name":"2018 76th Device Research Conference (DRC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121712409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical and THz Devices 光学和太赫兹器件

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/drc.2018.8442176

引用次数: 0

Multi-level 2-bit/cell operation utilizing Hf-based MONOS nonvolatile memory 利用基于高频的MONOS非易失性存储器的多级2位/单元操作

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442216

S. Kudoh, S. Ohmi

引用次数: 0