{"title":"利用基于高频的MONOS非易失性存储器的多级2位/单元操作","authors":"S. Kudoh, S. Ohmi","doi":"10.1109/DRC.2018.8442216","DOIUrl":null,"url":null,"abstract":"Metal-oxide-nitride-oxide-silicon (MONOS) type memory is a promising candidate to replace the conventional floating-gate (FG) type nonvolatile memory (NVM) [1]. Furthermore, the multi-level 2-bit/cell operation is necessary to realize for the high integration flash memory [2]. We have reported the excellent electrical characteristics of fully in-situ formed Hf-based MONOS NVM, which was able to be injected electron from sourceldrain region when NVM was operated by 6 V/2 ms [3]–[5]. In this study, multi-level 2-bit/cell operation of Hf-based MONOS NVM was investigated.","PeriodicalId":269641,"journal":{"name":"2018 76th Device Research Conference (DRC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Multi-level 2-bit/cell operation utilizing Hf-based MONOS nonvolatile memory\",\"authors\":\"S. Kudoh, S. Ohmi\",\"doi\":\"10.1109/DRC.2018.8442216\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Metal-oxide-nitride-oxide-silicon (MONOS) type memory is a promising candidate to replace the conventional floating-gate (FG) type nonvolatile memory (NVM) [1]. Furthermore, the multi-level 2-bit/cell operation is necessary to realize for the high integration flash memory [2]. We have reported the excellent electrical characteristics of fully in-situ formed Hf-based MONOS NVM, which was able to be injected electron from sourceldrain region when NVM was operated by 6 V/2 ms [3]–[5]. In this study, multi-level 2-bit/cell operation of Hf-based MONOS NVM was investigated.\",\"PeriodicalId\":269641,\"journal\":{\"name\":\"2018 76th Device Research Conference (DRC)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 76th Device Research Conference (DRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2018.8442216\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 76th Device Research Conference (DRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2018.8442216","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Metal-oxide-nitride-oxide-silicon (MONOS) type memory is a promising candidate to replace the conventional floating-gate (FG) type nonvolatile memory (NVM) [1]. Furthermore, the multi-level 2-bit/cell operation is necessary to realize for the high integration flash memory [2]. We have reported the excellent electrical characteristics of fully in-situ formed Hf-based MONOS NVM, which was able to be injected electron from sourceldrain region when NVM was operated by 6 V/2 ms [3]–[5]. In this study, multi-level 2-bit/cell operation of Hf-based MONOS NVM was investigated.
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