Multi-level 2-bit/cell operation utilizing Hf-based MONOS nonvolatile memory

Abstract

Metal-oxide-nitride-oxide-silicon (MONOS) type memory is a promising candidate to replace the conventional floating-gate (FG) type nonvolatile memory (NVM) [1]. Furthermore, the multi-level 2-bit/cell operation is necessary to realize for the high integration flash memory [2]. We have reported the excellent electrical characteristics of fully in-situ formed Hf-based MONOS NVM, which was able to be injected electron from sourceldrain region when NVM was operated by 6 V/2 ms [3]–[5]. In this study, multi-level 2-bit/cell operation of Hf-based MONOS NVM was investigated.