β-Ga2O3沟槽MOS肖特基势垒二极管的快速恢复性能

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI:10.1109/DRC.2018.8442267

A. Takatsuka, K. Sasaki, D. Wakimoto, Q. Thieu, Y. Koishikawa, Junichi Arima, Jun Hirabayashi, Daisuke Inokuchi, Yoshiaki Fukumitsu, A. Kuramata, S. Yamakoshi

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引用次数: 16

摘要

氧化镓(Ga2O3)是应用于高功率、低损耗器件的下一代半导体材料。其4.5-4.9 eV的宽带隙导致高击穿场为$\sim 8\ \mathrm{MV}/\mathrm{cm}$， Baliga的FOM为$\sim 3400$。在几种多型Ga2O3中，β-Ga2O3是最可行的选择，它可以通过边缘定义膜馈入生长(EFG)方法提供成本效益高、质量高的晶圆[1]。几个小组已经报道了使用β-Ga2O3晶圆的垂直型功率器件的优异电特性[2]-[4]。我们还展示了肖特基势垒二极管(sbd)[5]、沟槽金属氧化物半导体sbd (mossbd)[6]、结势垒肖特基二极管[7]和沟槽金属氧化物半导体场效应晶体管(mosfet)[8]。

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Fast Recovery Performance of β-Ga2O3 Trench MOS Schottky Barrier Diodes

Gallium oxide (Ga2O3) is promising next-generation semiconductor material for high power and low loss devices. Its wide band gap of 4.5-4.9 eV results in a high breakdown field of $\sim 8\ \mathrm{MV}/\mathrm{cm}$ and Baliga's FOM of $\sim 3400$. Among several polytypes of Ga2O3, β-Ga2O3 is the most viable option that can provide cost-effective and high-quality wafers with an edge-defined film-fed growth (EFG) method [1]. Several groups have reported excellent electric characteristics of vertical-type power devices using the β-Ga2O3 wafers [2]–[4]. We also demonstrated Schottky barrier diodes (SBDs) [5], trench metal-oxide-semiconductor SBDs (MOSSBDs) [6], junction barrier Schottky diodes [7], and trench metal-oxide-semiconductor field-effect transistors (MOSFETs) [8].

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2018 76th Device Research Conference (DRC)

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