Surface Passivated InN Nanowire and Graphene Heterojunction Based Memtransistor

Abstract

Since the discovery of graphene, there have been countless attempts to utilize its exceptional electronic, optical and mechanical properties. Forming a mixed dimensional heterojunction between graphene and a zero or one dimensional material (quantum dot or nanowire) can unlock even more interesting applications. These applications range from RF devices to highly sensitive chemical sensors [1]–[4]. In our prior works [4]–[5], we demonstrated some interesting results on graphene/InN heterojunction, where an electrically tunable Schottky barrier could be formed between graphene and InN nanowires using oxygen plasma based passivation of the nanowires. In this work, we demonstrate the electrically tunable memristive behavior of such graphene/InN nanowire based barristors (gate controlled Schottky barrier transistor).