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2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)最新文献

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Configuration Memory Scrubbing of the Xilinx Zynq-7000 FPGA using a Mixed 2-D Coding Technique 基于混合二维编码技术的Xilinx Zynq-7000 FPGA配置内存清洗
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745693
V. Vlagkoulis, Aitzan Sari, Juljan Proko, Dimitrios Zografakis, M. Psarakis, Antonios Tavoularis, G. Furano, C. Boatella-Polo, C. Poivey, V. Ferlet-Cavrois, M. Kastriotou, Pablo Fernández Martínez, R. G. Alía
{"title":"Configuration Memory Scrubbing of the Xilinx Zynq-7000 FPGA using a Mixed 2-D Coding Technique","authors":"V. Vlagkoulis, Aitzan Sari, Juljan Proko, Dimitrios Zografakis, M. Psarakis, Antonios Tavoularis, G. Furano, C. Boatella-Polo, C. Poivey, V. Ferlet-Cavrois, M. Kastriotou, Pablo Fernández Martínez, R. G. Alía","doi":"10.1109/radecs47380.2019.9745693","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745693","url":null,"abstract":"The paper presents a configuration memory scrubbing approach for the Xilinx Zynq-7000 devices. The approach combines the embedded Error Correction Code of the configuration memory frames and an interframe, interleaved parity scheme to form a mixed two-dimensional (2-D) error correction code. The 2-D coding scheme detects and corrects single and multiple bit upsets in the configuration memory of the Xilinx Zynq-7000 FPGA device. The proposed scrubbing methodology has been evaluated under heavy ion irradiation and achieved 100% error correction coverage.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"28 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131001167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single event sensitivity and de-rating of SiC power devices to heavy ions and protons 碳化硅功率器件对重离子和质子的单事件灵敏度和降级
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745691
M. Steffens, S. Höffgen, Tobias Kündgen, Eike Paschkowski, M. Poizat, D. Wölk
{"title":"Single event sensitivity and de-rating of SiC power devices to heavy ions and protons","authors":"M. Steffens, S. Höffgen, Tobias Kündgen, Eike Paschkowski, M. Poizat, D. Wölk","doi":"10.1109/radecs47380.2019.9745691","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745691","url":null,"abstract":"We present single event tests performed on silicon carbide power devices (MOSFET, JFET, Schottky diodes). The data were taken across four campaigns with heavy ions up to Krypton at the Heavy Ion Facility, UCL, Louvain-la-Neuve, with Xenon ions at the G4 cave at GANIL, Caen, with ultra-energetic Xenon at the H8 beamline at CERN and 45 MeV protons at the JULIC cyclotron, research centre Jülich. Throughout all tests the devices showed a high sensitivity to destructive single event induced failures even at low LETs or protons and significant derating.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125361348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Application of effective LET approach for modern CMOS devices 有效LET方法在现代CMOS器件中的应用
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745667
A. Akhmetov, D. Bobrovsky, A. Smolin, A. Chumakov, A. Sogoyan
{"title":"Application of effective LET approach for modern CMOS devices","authors":"A. Akhmetov, D. Bobrovsky, A. Smolin, A. Chumakov, A. Sogoyan","doi":"10.1109/radecs47380.2019.9745667","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745667","url":null,"abstract":"Applicability of effective LET concept to SEE testing of modern CMOS devices was investigated. Heavy ion irradiations of four CMOS ICs were performed for a wide range of LET values and angles of incidence.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128097449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Multi-objective Optimization Framework to Design Soft-Error-Immune Circuit 软误差免疫电路设计的多目标优化框架
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745725
Yan Li, Jun Han, Yu-Jiao Han, Xiao-yang Zeng, Xiaoyang Zeng
{"title":"A Multi-objective Optimization Framework to Design Soft-Error-Immune Circuit","authors":"Yan Li, Jun Han, Yu-Jiao Han, Xiao-yang Zeng, Xiaoyang Zeng","doi":"10.1109/radecs47380.2019.9745725","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745725","url":null,"abstract":"It is widely accepted that Triple Module Redundancy (TMR) hardened method is one of the most effective approach to protect circuit from soft error. However, while the mitigation of Soft Error Rate (SER) entails the inevitable sacrifice of area and power, little attention has been drawn to an optimization method to explore a trade-off between area, power and SER. Thus, with the help of neural network algorithm and NSGA-II algorithm, this study investigates a multi-objective optimization model as a guidance on Soft-Error-Immune circuit design.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131819450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
TID test results of radiation hardened SiC MOS structures 辐射硬化SiC MOS结构的TID试验结果
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745638
V. Cantarella, F. Pintacuda, S. Massetti, M. Muschiello
{"title":"TID test results of radiation hardened SiC MOS structures","authors":"V. Cantarella, F. Pintacuda, S. Massetti, M. Muschiello","doi":"10.1109/radecs47380.2019.9745638","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745638","url":null,"abstract":"This paper describe the results about TID test related to 400Å and 600Å SiC PowerMosfet structures. This study shall be considered as preparatory work supporting the planned development of discrete European radiation-hardened SiC power-MOSFETs for space applications.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114781188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Contactless Approaches for the Electronic Device Heating during Radiation Hardness Assurance Tests for Single-Event Effects 单事件效应辐射硬度保证试验中电子器件加热的非接触方法
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745724
Ekaterina N. Nekrasova, Eugeniy V. Mitin, P. Y. Gromov, V. Anashin
{"title":"Contactless Approaches for the Electronic Device Heating during Radiation Hardness Assurance Tests for Single-Event Effects","authors":"Ekaterina N. Nekrasova, Eugeniy V. Mitin, P. Y. Gromov, V. Anashin","doi":"10.1109/radecs47380.2019.9745724","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745724","url":null,"abstract":"Different approaches to perform the electronic device heating during radiation hardness assurance tests are discussed. A new heating approach based on the use of ceramic infrared heaters is presented along with experimental results.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116718099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vertical Line Fault Mechanism Induced by Heavy Ions in an SLC NAND Flash SLC NAND闪存中重离子诱导的垂直线故障机制
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745668
V. Gupta, A. Besser, Lucas Matana Luza, D. Soderstrom, A. Javanainen, H. Kettunen, J. Praks, K. Voss, A. Virtanen, L. Dilillo
{"title":"Vertical Line Fault Mechanism Induced by Heavy Ions in an SLC NAND Flash","authors":"V. Gupta, A. Besser, Lucas Matana Luza, D. Soderstrom, A. Javanainen, H. Kettunen, J. Praks, K. Voss, A. Virtanen, L. Dilillo","doi":"10.1109/radecs47380.2019.9745668","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745668","url":null,"abstract":"The vertical line fault mechanism occurring in NAND flash devices under heavy-ion irradiation is described in detail. The location where the fault is generated as well as the recovery sequence are identified.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"537 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116242270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The RADECS 2019 Awards RADECS 2019奖项
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745714
{"title":"The RADECS 2019 Awards","authors":"","doi":"10.1109/radecs47380.2019.9745714","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745714","url":null,"abstract":"","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126128306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experiment and Simulation on Single-Event Transient Effects of the MOS Capacitor in LDO LDO中MOS电容单事件瞬态效应的实验与仿真
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745705
Cheng-Long Sui, Liang Wang, Xupeng Han, Jiaqi Liu, Weiyi Cao, Lei Shu, Tongde Li, Yuanfu Zhao
{"title":"Experiment and Simulation on Single-Event Transient Effects of the MOS Capacitor in LDO","authors":"Cheng-Long Sui, Liang Wang, Xupeng Han, Jiaqi Liu, Weiyi Cao, Lei Shu, Tongde Li, Yuanfu Zhao","doi":"10.1109/radecs47380.2019.9745705","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745705","url":null,"abstract":"Performance of a RHBD LDO is verified by experiments. According to the experimental results of LDOs, a novel SET sensitive mechanism of compensation MOS capacitor is found and the mitigation method is proposed.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125955495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Radiation Specification and Testing of Heterogenous Microprocessor SOCs 异质微处理器soc的辐射规范与测试
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI: 10.1109/radecs47380.2019.9745708
S. Guertin, R. Some, P. Nsengiyumva, E. Cannon, M. Cabañas-Holmen, J. Ballast
{"title":"Radiation Specification and Testing of Heterogenous Microprocessor SOCs","authors":"S. Guertin, R. Some, P. Nsengiyumva, E. Cannon, M. Cabañas-Holmen, J. Ballast","doi":"10.1109/radecs47380.2019.9745708","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745708","url":null,"abstract":"Modern commercial microprocessor devices include multiple processor architectures, buses, basic peripherals, and application hardware such as Graphics Processing Units (GPUs) and Digital Signal Processors (DSPs) in one device. Developing RHBD versions of similar devices risks sacrificing processing performance for system-wide radiation requirements. The heterogenous structure of modern commercial system on a chip (SOC) devices, in design and performance goals for subsystems, suggests a similar approach to specifying Radiation Hardened by Design (RHBD) requirements. New RHBD devices can benefit from heterogenous radiation requirements and testing for subsystems. Such an approach has been taken in the High-Performance Spaceflight Computer (HPSC) architecture, but this has led to difficulties on three fronts. First, how should the subsystems be divided in order that part of the device can actually meet radiation requirements in the presence of potentially much weaker requirements for other parts of the system? Second, what are appropriate radiation requirements for such a device, including a possible extra-radiation hardened embedded controller? And finally, how should a device with multiple radiation performance subsystem requirements be tested for radiation performance?","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121235911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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