有效LET方法在现代CMOS器件中的应用

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI:10.1109/radecs47380.2019.9745667

A. Akhmetov, D. Bobrovsky, A. Smolin, A. Chumakov, A. Sogoyan

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引用次数: 1

摘要

研究了有效LET概念在现代CMOS器件SEE测试中的适用性。在较宽的LET值和入射角范围内对四种CMOS集成电路进行重离子辐照。

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Application of effective LET approach for modern CMOS devices

Applicability of effective LET concept to SEE testing of modern CMOS devices was investigated. Heavy ion irradiations of four CMOS ICs were performed for a wide range of LET values and angles of incidence.

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来源期刊

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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