Experiment and Simulation on Single-Event Transient Effects of the MOS Capacitor in LDO

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI:10.1109/radecs47380.2019.9745705

Cheng-Long Sui, Liang Wang, Xupeng Han, Jiaqi Liu, Weiyi Cao, Lei Shu, Tongde Li, Yuanfu Zhao

引用次数: 1

Abstract

Performance of a RHBD LDO is verified by experiments. According to the experimental results of LDOs, a novel SET sensitive mechanism of compensation MOS capacitor is found and the mitigation method is proposed.

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LDO中MOS电容单事件瞬态效应的实验与仿真

实验验证了RHBD LDO的性能。根据LDOs的实验结果，发现了一种补偿型MOS电容的SET敏感机理，并提出了一种新的抑制方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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