TID test results of radiation hardened SiC MOS structures

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI:10.1109/radecs47380.2019.9745638

V. Cantarella, F. Pintacuda, S. Massetti, M. Muschiello

引用次数: 0

Abstract

This paper describe the results about TID test related to 400Å and 600Å SiC PowerMosfet structures. This study shall be considered as preparatory work supporting the planned development of discrete European radiation-hardened SiC power-MOSFETs for space applications.

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辐射硬化SiC MOS结构的TID试验结果

本文介绍了与400Å和600Å SiC PowerMosfet结构相关的TID测试结果。这项研究应被视为支持计划开发用于空间应用的离散欧洲抗辐射SiC功率mosfet的准备工作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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