SLC NAND闪存中重离子诱导的垂直线故障机制

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI:10.1109/radecs47380.2019.9745668

V. Gupta, A. Besser, Lucas Matana Luza, D. Soderstrom, A. Javanainen, H. Kettunen, J. Praks, K. Voss, A. Virtanen, L. Dilillo

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引用次数: 0

摘要

详细描述了NAND闪存器件在重离子辐照下发生的垂直线故障机理。确定故障发生的位置和恢复顺序。

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Vertical Line Fault Mechanism Induced by Heavy Ions in an SLC NAND Flash

The vertical line fault mechanism occurring in NAND flash devices under heavy-ion irradiation is described in detail. The location where the fault is generated as well as the recovery sequence are identified.

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来源期刊

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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