{"title":"Detecting memory faults in the presence of bit line coupling in SRAM devices","authors":"S. Irobi, Z. Al-Ars, S. Hamdioui","doi":"10.1109/TEST.2010.5699246","DOIUrl":"https://doi.org/10.1109/TEST.2010.5699246","url":null,"abstract":"The fault coverage of otherwise efficient memory tests can be dramatically reduced due to the influence of bit line coupling. This paper, analyzes the impact of parasitic bit line coupling and neighborhood coupling data backgrounds on the faulty behavior of SRAMs. It investigates and determines the worst case coupling backgrounds required to induce worst case coupling effects, and validates the analysis through defect injection and circuit simulation of all possible spot defects in the SRAM cell array. The paper clearly demonstrates the inadequacies and limitations of several industrial tests in detecting memory faults in the presence of bit line coupling. Finally, it shows how to detect all single-cell and two-cell faults, both in the absence and in the presence of bit line coupling for any possible spot defect.","PeriodicalId":265156,"journal":{"name":"2010 IEEE International Test Conference","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131798195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Koji Asami, Hiroyuki Miyajima, Tsuyoshi Kurosawa, T. Tateiwa, Haruo Kobayashi
{"title":"Timing skew compensation technique using digital filter with novel linear phase condition","authors":"Koji Asami, Hiroyuki Miyajima, Tsuyoshi Kurosawa, T. Tateiwa, Haruo Kobayashi","doi":"10.1109/TEST.2010.5699234","DOIUrl":"https://doi.org/10.1109/TEST.2010.5699234","url":null,"abstract":"This paper describes the timing skew compensation technique using the digital filter with our novel linear phase condition. First we describe the digital filter which can set its group delay with the arbitrary fine time resolution while it maintains the linear phase characteristics; the conventional linear phase digital filter can set its group delay with the time resolution of a half of the sampling period. We will provide its structure and operation, theoretical analysis as well as simulation verification. Next we will describe the application of our proposed digital filter to compensate for timing skew in the following cases: (1) Sampling timing skew among channels in the time-interleaved ADC system. (2) I, Q-path timing skew in the single-side band (SSB) signal generator. We show its effectiveness with simulation.","PeriodicalId":265156,"journal":{"name":"2010 IEEE International Test Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134412653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Hapke, W. Redemund, J. Schlöffel, Rene Krenz-Baath, Andreas Glowatz, M. Wittke, H. Hashempour, S. Eichenberger
{"title":"Defect-oriented cell-internal testing","authors":"F. Hapke, W. Redemund, J. Schlöffel, Rene Krenz-Baath, Andreas Glowatz, M. Wittke, H. Hashempour, S. Eichenberger","doi":"10.1109/TEST.2010.5699229","DOIUrl":"https://doi.org/10.1109/TEST.2010.5699229","url":null,"abstract":"Industry is facing very high quality requirements for today's and tomorrow's ICs. Especially in the automotive market these quality requirements need to be fulfilled. To achieve this we need to improve currently used test methods and fault models to improve the overall defect coverage. This paper presents two new methodologies to significantly improve this situation. One method will focus on cell-internal Bridges over a wide range of Bridge resistor values and the second method concentrates on library cell-internal high-resistive Open defects. The fault models used during the ATPG are enhanced to directly target the layout-based intra-cell Open and Bridge defects. Both methods have been evaluated on 1500 library cells of a 65nm technology. In addition the wide range of intracell Bridges has been evaluated on 10 real industrial designs with up to 60 million faults. Various results are presented from all 1500 library cells and from the 10 industrial designs as well.","PeriodicalId":265156,"journal":{"name":"2010 IEEE International Test Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132091225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Automatic classification of bridge defects","authors":"J. E. Nelson, W. Tam, R. D. Blanton","doi":"10.1109/TEST.2010.5699231","DOIUrl":"https://doi.org/10.1109/TEST.2010.5699231","url":null,"abstract":"A technique is proposed to automatically predict whether a failing chip has a bridge defect. Logic diagnosis is performed using scan test results to identify candidate nets. Several relevant features of the test data are measured for net pairs that consist of the diagnosis candidates and other nets in close physical proximity. Based on these features, rules are constructed to identify defects that fully exhibit classic bridge behaviors, while the remaining chips are classified using a forest of decision trees. Results indicate that a population of chips failing due to bridges can indeed be extracted with very high accuracy. Finally, the method correctly classifies 41 commercially-fabricated chips that underwent PFA.","PeriodicalId":265156,"journal":{"name":"2010 IEEE International Test Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117022234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"On techniques for handling soft errors in digital circuits","authors":"Warin Sootkaneung, K. Saluja","doi":"10.1109/TEST.2010.5699278","DOIUrl":"https://doi.org/10.1109/TEST.2010.5699278","url":null,"abstract":"Dealing with soft errors due to particle strikes is the next major challenge in implementing digital systems. This study thoroughly investigates the effect of device size on circuit soft error rate and identifies methods to reduce soft error rate in combinational circuits. In particular, we propose three novel methods that upsize only selected gates and /or transistor networks. In order to obtain the most appropriate technique for soft error rate reduction in small technology node circuits, we conduct experiments and compare the results for several upsizing techniques including all gates, selected gates and transistor networks based on their fault sensitivities, and parallel networks with soft error rate saturation consideration. Consequently, it is discovered that some upsizing scenarios perform large improvement whereas others do not or even increase the soft error rate. The use of fault sensitivity analysis approach with parallel transistor network upsizing based on the contribution of each sensitive gate can reasonably reduce overall circuit sensitivity. Experimental results show an average reduction in soft error rate about 20% with a very small area overhead of 2% for benchmark circuits using our technique.","PeriodicalId":265156,"journal":{"name":"2010 IEEE International Test Conference","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124298060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shuou Nomura, K. Sankaralingam, Ranganathan Sankaralingam
{"title":"A fast and highly accurate path delay emulation framework for logic-emulation of timing speculation","authors":"Shuou Nomura, K. Sankaralingam, Ranganathan Sankaralingam","doi":"10.1109/TEST.2010.5699267","DOIUrl":"https://doi.org/10.1109/TEST.2010.5699267","url":null,"abstract":"This paper proposes a novel path-delay fault emulation technique called Replay. We specifically show it allows FPGA emulation of digital ICs that adopt timing-speculation techniques. For each flip-flop, Replay builds a timing-error predictor based on timing-speculation's aggressive clock period. We use a heuristic which replicates the combination logic and uses path delays to determine which paths will be excited based on the aggressive clock period. The timing-error prediction accuracy is more than 99% for a set of real workloads on the OpenRISC processor and the FPGA emulation speed shows practically no slowdown. We also demonstrate that Replay can evaluate the impact of voltage-drop timing-faults. This fast and accurate timing-error prediction enables practical emulation of timing-speculation and quantitative analysis early in the design-cycle.","PeriodicalId":265156,"journal":{"name":"2010 IEEE International Test Conference","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124993950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Validating the performance of a 32nm CMOS high speed serial link receiver with adaptive equalization and baud-rate clock data recovery","authors":"S. Puligundla, F. Spagna, Lidong Chen, A. Tran","doi":"10.1109/TEST.2010.5699242","DOIUrl":"https://doi.org/10.1109/TEST.2010.5699242","url":null,"abstract":"On-Die features available for validation and test on an integrated circuit play a major role in evaluating the performance of the functionality being realized by the circuit in a post-silicon environment and can considerably reduce time to market of the end-product. In the case of high-speed IO, it is also important to note that the type of on-die hooks required to debug and validate the performance and robustness of the design depend on several factors, of which the type of I/O architecture chosen plays a key role. In order to support high data rates, the serial I/O design in this paper implements a receiver with adaptive equalization engine for the compensation of inter-symbol interference (ISI) and real-time environmental changes (temperature and voltage). This paper describes the debug hooks and their usage models in such a high-speed I/O designed using a 32nm CMOS process. These hooks have been tested in the lab and proven to be very useful. While the main focus of the paper is to describe the hooks, how they are used in the lab for observing the robustness in the dynamic behavior of the adaptive loops and the measurement results; the reader is also provided with a brief insight into the equations describing the loops behavior together with a description of the loops implementation details.","PeriodicalId":265156,"journal":{"name":"2010 IEEE International Test Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122137063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Khursheed, Shida Zhong, R. Aitken, B. Al-Hashimi, S. Kundu
{"title":"Modeling the impact of process variation on resistive bridge defects","authors":"S. Khursheed, Shida Zhong, R. Aitken, B. Al-Hashimi, S. Kundu","doi":"10.1109/TEST.2010.5699230","DOIUrl":"https://doi.org/10.1109/TEST.2010.5699230","url":null,"abstract":"Recent research has shown that tests generated without taking process variation into account may lead to loss of test quality. At present there is no efficient device-level modeling technique that models the effect of process variation on resistive bridges. This paper presents a fast and accurate technique to model the effect of process variation on resistive bridge defects. The proposed model is implemented in two stages: firstly, it employs an accurate transistor model (BSIM4) to calculate the critical resistance of a bridge; secondly, the effect of process variation is incorporated in this model by using three transistor parameters: gate length (L), threshold voltage (Vth) and effective mobility (μeff), where each follow Gaussian distribution. Experiments are conducted on a 65-nm gate library (for illustration purposes), and results show that on average the proposed modeling technique is more than 7 times faster and in the worst case, error in bridge critical resistance is 0.8% when compared with HSPICE.","PeriodicalId":265156,"journal":{"name":"2010 IEEE International Test Conference","volume":"284 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131646593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Mannath, D. Webster, V. Montaño-Martinez, David Cohen, S. Kush, G. Thiagarajan, A. Sontakke
{"title":"Structural approach for built-in tests in RF devices","authors":"D. Mannath, D. Webster, V. Montaño-Martinez, David Cohen, S. Kush, G. Thiagarajan, A. Sontakke","doi":"10.1109/TEST.2010.5699241","DOIUrl":"https://doi.org/10.1109/TEST.2010.5699241","url":null,"abstract":"Production testing of today's RF SoCs does not require expensive conventional tests. We propose a set of defect based tests for the RF/Analog sections, based on our analysis of defects that occur in a modern RFCMOS process.","PeriodicalId":265156,"journal":{"name":"2010 IEEE International Test Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128320253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Robertazzi, L. Medina, E. Shiling, Garry Moore, Ronald Geiger, J. Liao, John Williamson
{"title":"New tools and methodology for advanced parametric and defect structure test","authors":"R. Robertazzi, L. Medina, E. Shiling, Garry Moore, Ronald Geiger, J. Liao, John Williamson","doi":"10.1109/TEST.2010.5699201","DOIUrl":"https://doi.org/10.1109/TEST.2010.5699201","url":null,"abstract":"Continuing scaling trends in semiconductor technology, as well as the test requirements of new technologies being incorporated with mainstream silicon integrated circuits, has increased the complexity of parametric and defect structure testing. New testers are required which can drastically improve the throughput of parametric test, as well as efficiently test new array based process diagnostic structures. Addressing these needs requires merging the traditionally separate functions of digital and parametric test equipment. We describe the development of a new hybrid test system, which combines the features of parametric and digital testers, and in addition introduces a high degree parallelism in its parametric test functions. The test system was developed for high throughput inline test (“parallel test”) of defect structures, semiconductor parametric macros, and advanced array based process monitors down to pA current levels, as well as traditional all digital yield macros, such as SRAMs.","PeriodicalId":265156,"journal":{"name":"2010 IEEE International Test Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125777997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}