先进的参数化和缺陷结构测试的新工具和方法

R. Robertazzi, L. Medina, E. Shiling, Garry Moore, Ronald Geiger, J. Liao, John Williamson
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引用次数: 5

摘要

半导体技术的持续缩放趋势,以及与主流硅集成电路相结合的新技术的测试要求,增加了参数化和缺陷结构测试的复杂性。需要新的测试设备,它可以大大提高参数测试的吞吐量,并有效地测试新的基于阵列的过程诊断结构。为了满足这些需求,需要合并传统上分离的数字和参数测试设备的功能。我们描述了一种新的混合测试系统的开发,它结合了参数测试和数字测试的特点,并在参数测试功能中引入了高度并行性。该测试系统是为缺陷结构、半导体参数宏、基于先进阵列的工艺监视器(低至pA电流水平)以及传统的全数字良率宏(如sram)的高通量内联测试(“并行测试”)而开发的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
New tools and methodology for advanced parametric and defect structure test
Continuing scaling trends in semiconductor technology, as well as the test requirements of new technologies being incorporated with mainstream silicon integrated circuits, has increased the complexity of parametric and defect structure testing. New testers are required which can drastically improve the throughput of parametric test, as well as efficiently test new array based process diagnostic structures. Addressing these needs requires merging the traditionally separate functions of digital and parametric test equipment. We describe the development of a new hybrid test system, which combines the features of parametric and digital testers, and in addition introduces a high degree parallelism in its parametric test functions. The test system was developed for high throughput inline test (“parallel test”) of defect structures, semiconductor parametric macros, and advanced array based process monitors down to pA current levels, as well as traditional all digital yield macros, such as SRAMs.
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