发布求助
文献互助 智能选刊 最新文献

2011 3rd IEEE International Memory Workshop (IMW)最新文献

筛选
英文 中文
High Performance THANVaS Memories for MLC Charge Trap NAND Flash 用于MLC电荷阱NAND闪存的高性能thanas存储器
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873210
A. Suhane, G. V. D. Bosch, A. Arreghini, L. Breuil, A. Cacciato, M. Zahid, I. Debusschere, K. D. Meyer, J. V. Houdt
{"title":"High Performance THANVaS Memories for MLC Charge Trap NAND Flash","authors":"A. Suhane, G. V. D. Bosch, A. Arreghini, L. Breuil, A. Cacciato, M. Zahid, I. Debusschere, K. D. Meyer, J. V. Houdt","doi":"10.1109/IMW.2011.5873210","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873210","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"170 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127033454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 256Gb NAND Flash Memory Stack with 300MB/s HLNAND Interface Chip for Point-to-Point Ring Topology 256Gb NAND快闪记忆体堆叠与300MB/s HLNAND介面晶片，适用于点对点环形拓扑结构
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873241
P. Gillingham, Jin-Ki Kim, R. Schuetz, Hong-Beom Pyeon, Hakjune Oh, D. MacDonald, Eric Choi, David Chinn
{"title":"A 256Gb NAND Flash Memory Stack with 300MB/s HLNAND Interface Chip for Point-to-Point Ring Topology","authors":"P. Gillingham, Jin-Ki Kim, R. Schuetz, Hong-Beom Pyeon, Hakjune Oh, D. MacDonald, Eric Choi, David Chinn","doi":"10.1109/IMW.2011.5873241","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873241","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130736074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effects of Alloy Composition on Multilevel Operation in Self-Heating Phase Change Memories 合金成分对自热相变存储器多能级运行的影响
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873226
S. Braga, N. Pashkov, L. Perniola, A. Fantini, A. Cabrini, G. Torelli, V. Sousa, B. De Salvo, G. Reimbold
{"title":"Effects of Alloy Composition on Multilevel Operation in Self-Heating Phase Change Memories","authors":"S. Braga, N. Pashkov, L. Perniola, A. Fantini, A. Cabrini, G. Torelli, V. Sousa, B. De Salvo, G. Reimbold","doi":"10.1109/IMW.2011.5873226","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873226","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"295 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114842943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A Comprehensive Simulation Study on Metal Conducting Filament Formation in Resistive Switching Memories 阻性开关存储器中金属导电丝形成的综合仿真研究
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873222
Feng Pan, Shong Yin, V. Subramanian
{"title":"A Comprehensive Simulation Study on Metal Conducting Filament Formation in Resistive Switching Memories","authors":"Feng Pan, Shong Yin, V. Subramanian","doi":"10.1109/IMW.2011.5873222","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873222","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117095600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Characterization and Physical Modeling of Endurance in Embedded Non-Volatile Memory Technology 嵌入式非易失性存储器技术耐久性的表征和物理建模
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873186
D. Garetto, A. Zaka, J. Manceau, D. Rideau, E. Dornel, W. Clark, A. Schmid, H. Jaouen, Y. Leblebici
{"title":"Characterization and Physical Modeling of Endurance in Embedded Non-Volatile Memory Technology","authors":"D. Garetto, A. Zaka, J. Manceau, D. Rideau, E. Dornel, W. Clark, A. Schmid, H. Jaouen, Y. Leblebici","doi":"10.1109/IMW.2011.5873186","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873186","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124744631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A True 6F2 NOR Flash Memory Cell Technology - Impact of Floating Gate B4-Flash on NOR Scaling 一种真正的6F2 NOR闪存单元技术——浮栅b4闪存对NOR缩放的影响
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873217
S. Shimizu, S. Shukuri, N. Ajika, T. Ogura, M. Mihara, Y. Kawajiri, K. Kobayashi, M. Nakashima
{"title":"A True 6F2 NOR Flash Memory Cell Technology - Impact of Floating Gate B4-Flash on NOR Scaling","authors":"S. Shimizu, S. Shukuri, N. Ajika, T. Ogura, M. Mihara, Y. Kawajiri, K. Kobayashi, M. Nakashima","doi":"10.1109/IMW.2011.5873217","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873217","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124758689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Novel FN Erasable Undercut Device Containing Two Physically Separated Nitride Storage Nodes Per Cell Suitable for Advanced NOR Flash Memory Technology 一种新型的FN可擦除下切器件，每个单元包含两个物理分离的氮化物存储节点，适用于先进的NOR闪存技术
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873212
Seon-Young Chung, S. Chan, K.-T. Chang, B. Davis, G. Kathawala, K. Ko, S.-C. Lee, Z. Liu, C. Lin, K. Ohtsuka, S. Park, T. Thurgate, L. Xue, M. Randolph, H. Shiraiwa, Y. Sun, C. Chang
{"title":"A Novel FN Erasable Undercut Device Containing Two Physically Separated Nitride Storage Nodes Per Cell Suitable for Advanced NOR Flash Memory Technology","authors":"Seon-Young Chung, S. Chan, K.-T. Chang, B. Davis, G. Kathawala, K. Ko, S.-C. Lee, Z. Liu, C. Lin, K. Ohtsuka, S. Park, T. Thurgate, L. Xue, M. Randolph, H. Shiraiwa, Y. Sun, C. Chang","doi":"10.1109/IMW.2011.5873212","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873212","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130939160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigation of Thermal Stability of High-kappa Interpoly Dielectrics in TaN Metal Floating Gate Memory Structures TaN金属浮栅记忆结构中高卡帕内插介质的热稳定性研究
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873183
S. Jayanti, Xiangyu Yang, V. Misra
{"title":"Investigation of Thermal Stability of High-kappa Interpoly Dielectrics in TaN Metal Floating Gate Memory Structures","authors":"S. Jayanti, Xiangyu Yang, V. Misra","doi":"10.1109/IMW.2011.5873183","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873183","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130988679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A First Study on Self-Healing Solid-State Drives 自修复固态硬盘的首次研究
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873201
Qi Wu, Guiqiang Dong, Tong Zhang
{"title":"A First Study on Self-Healing Solid-State Drives","authors":"Qi Wu, Guiqiang Dong, Tong Zhang","doi":"10.1109/IMW.2011.5873201","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873201","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126429068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Solid State Storage: Catalyst to Future Technology Growth 固态存储:未来技术发展的催化剂
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873194
R. Warren
{"title":"Solid State Storage: Catalyst to Future Technology Growth","authors":"R. Warren","doi":"10.1109/IMW.2011.5873194","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873194","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124905945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信