Seon-Young Chung, S. Chan, K.-T. Chang, B. Davis, G. Kathawala, K. Ko, S.-C. Lee, Z. Liu, C. Lin, K. Ohtsuka, S. Park, T. Thurgate, L. Xue, M. Randolph, H. Shiraiwa, Y. Sun, C. Chang
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A Novel FN Erasable Undercut Device Containing Two Physically Separated Nitride Storage Nodes Per Cell Suitable for Advanced NOR Flash Memory Technology
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